BUK9M28-80EX

BUK9M28-80E N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 80 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 33 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 75 W VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 23 28 mΩ ID = 10 A; VDS = 64 V; VGS = 5 V; - 6.1 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Tj = 25 °C; Fig. 13; Fig. 14 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S Source 2 S Source 3 S Source 4 G Gate mb D Mounting base; connected to drain Graphic symbol D G mbb076 1 2 3 S 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package BUK9M28-80E Name Description Version LFPAK33 Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210 7. Marking Table 4. Marking codes Type number Marking code BUK9M28-80E 92880E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 80 V VDGR drain-gate voltage RGS = 20 kΩ - 80 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 10 V -15 15 V Pulsed; Tj ≤ 175 °C [1][2] Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 75 W ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - 33 A VGS = 5 V; Tmb = 100 °C; Fig. 2 - 23.1 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 131 A IDM peak drain current BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 2 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Tstg Tj Conditions Min Max Unit storage temperature -55 175 °C junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 33 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 131 A - 42.2 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 33 A; Vsup ≤ 80 V; RGS = 50 Ω; [3][4] VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] [3] [4] Accumulated pulse duration up to 50 hours delivers zero defect ppm. Significantly longer life times are achieved by lowering Tj and or VGS Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 ID (A) Pder (%) aaa-020651 40 30 80 20 40 10 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature BUK9M28-80E Product data sheet 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 5 V Fig. 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 3 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 ID (A) aaa-020652 103 Limit RDSon = VDS / ID 102 tp = 10 us 10 100 us DC 1 10-1 1 ms 10 ms 100 ms 1 102 10 103 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-020650 102 (1) 10 (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 1.82 2 K/W BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 4 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 aaa-020653 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 P δ= tp T 0.02 single shot t tp 10-2 10-6 Fig. 5. 10-5 10-4 10-3 10-2 T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 72 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.4 1.7 2.1 V - - 2.45 V 0.5 - - V VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 80 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 23 28 mΩ VGS = 10 V; ID = 10 A; Tj = 25 °C; - 20 25 mΩ - - 70 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11 VGS = 5 V; ID = 10 A; Tj = 175 °C; Fig. 12 Dynamic characteristics QG(tot) total gate charge ID = 10 A; VDS = 64 V; VGS = 5 V; - 16.7 - nC QGS gate-source charge Tj = 25 °C; Fig. 13; Fig. 14 - 4.2 - nC BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 5 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit QGD gate-drain charge - 6.1 - nC Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 1711 2275 pF Tj = 25 °C; Fig. 15 Coss output capacitance - 131 157 pF Crss reverse transfer capacitance - 65 89 pF td(on) turn-on delay time VDS = 60 V; RL = 5 Ω; VGS = 5 V; - 10.5 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 17.7 - ns td(off) turn-off delay time - 21.8 - ns tf fall time - 14.1 - ns Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.82 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; - 23.8 - ns Qr recovered charge VDS = 25 V; Tj = 25 °C - 28.1 - nC ID (A) aaa-020654 50 10 V 3.5 V 4.5 V aaa-020655 100 RDSon (mΩ) 40 80 30 60 VGS = 3 V 20 40 2.8 V 10 20 2.6 V 2.4 V 0 Fig. 6. 0 1 2 3 VDS (V) 0 4 0 2 4 6 8 10 12 14 VGS (V) 16 Tj = 25 °C Tj = 25 °C; ID = 10 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 6 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 ID (A) aaa-020656 50 003aah026 10-1 ID (A) 40 10-2 30 10-3 20 10-4 10 0 175°C 0 1 3 4 VGS (V) 10-6 5 VDS = 12 V Fig. 8. typ max 10-5 Tj = 25°C 2 min 0 1 2 V GS (V) 3 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah025 3 VGS(th) (V) 2.5 Fig. 9. Sub-threshold drain current as a function of gate-source voltage aaa-020657 100 RDSon (mΩ) 2.6 V 2.8 V 3V 80 max 2 60 typ 1.5 1 20 0.5 0 -60 0 60 120 Tj (° C) 0 180 0 10 20 30 40 ID (A) 50 Tj = 25 °C Fig. 10. Gate-source threshold voltage as a function of junction temperature Product data sheet 4.5 V VGS = 10 V ID = 1mA; VDS = VGS BUK9M28-80E 3.5 V 40 min Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 7 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 003aaj818 3 VGS (V) a aaa-020658 10 2.4 8 1.8 6 VDS = 14 V 1.2 4 0.6 2 0 -60 0 60 120 Tj ( °C) 0 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 0 5 64 V 10 15 20 25 QG (nC) Tj = 25 °C; ID = 10 A Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-020659 104 C (pF) VDS ID 30 Ciss 103 VGS(pl) Coss VGS(th) VGS QGS2 QGS1 QGS Crss 102 QGD QG(tot) 003aaa508 Fig. 14. Gate charge waveform definitions 10 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 8 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 IS (A) aaa-020660 80 64 48 32 16 0 175°C 0 0.2 0.4 0.6 Tj = 25°C 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values 11. Application information For guidance on how to use and understand this datasheet, please refer to application note AN11158 "Understanding power MOSFET datasheet parameters". BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 9 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 12. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E A e1 A c1 b1 L1 SOT1210 D2 mounting base D1 (D) H E1 L 1 4 b e w A A1 C X c Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) A A1 b(1) max 0.90 0.10 0.35 nom min 0.80 0.00 0.25 mm b1(1) c c1 2.4 0.20 0.30 2.2 0.10 0.20 D ref 2.60 D1 2.35 1.90 D2 0.50 E(1) E1 3.40 2.45 3.20 2.00 e e1 0.65 0.65 H L L1 Lp 3.40 0.65 0.25 0.50 3.20 0.45 0.13 0.30 w 0.20 0.10 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version sot1210_po References IEC JEDEC y JEITA European projection Issue date 14-04-25 16-08-09 SOT1210 Fig. 17. Package outline LFPAK33 (SOT1210) BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 10 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. Legal information 13.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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BUK9M28-80E Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 11 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 12 / 13 BUK9M28-80E Nexperia N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 14. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Application information .........................................9 12 Package outline ................................................... 10 13 13.1 13.2 13.3 13.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 19 September 2016 BUK9M28-80E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 13 / 13