PESD3V3U1UT,215

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 02 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients. 1.2 Features n n n n Unidirectional ESD protection of one line Ultra low diode capacitance: Cd = 0.6 pF Max. peak pulse power: PPP up to 200 W Low clamping voltage n ESD protection > 23 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5; (surge) 1.3 Applications n 10/100/1000 Ethernet n FireWire n Communication systems n Local Area Network (LAN) equipment n Computers and peripherals n High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT Cd [1] diode capacitance Measured from pin 1 to 2 f = 1 MHz; VR = 0 V [1] - - 24 V - 0.6 1.5 pF PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 cathode ESD protection diode 2 cathode compensation diode 3 common anode Symbol 3 1 3 2 1 2 006aaa441 3. Ordering information Table 3. Ordering information Type number PESD3V3U1UT Package Name Description Version - plastic surface mounted package; 3 leads SOT23 PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT 4. Marking Table 4. Marking codes Type number Marking code[1] PESD3V3U1UT *AP PESD5V0U1UT *AQ PESD12VU1UT *AR PESD15VU1UT *AS PESD24VU1UT *AT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 2 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3U1UT - 80 W PESD5V0U1UT - 80 W PESD12VU1UT - 200 W PESD15VU1UT - 200 W - 200 W PESD3V3U1UT - 5 A PESD5V0U1UT - 5 A PESD12VU1UT - 5 A PESD15VU1UT - 5 A PESD24VU1UT - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP Parameter Conditions peak pulse power 8/20 µs [1] PESD24VU1UT peak pulse current IPP [1] 8/20 µs Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. PESDXU1UT_SER_2 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 3 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package Table 6. ESD maximum ratings Symbol Parameter Conditions Min Max Unit PESD3V3U1UT - 30 kV PESD5V0U1UT - 30 kV PESD12VU1UT - 30 kV PESD15VU1UT - 30 kV PESD24VU1UT - 23 kV - 10 kV electrostatic discharge voltage VESD PESDxU1UT IEC 61000-4-2 (contact discharge) HBM MIL-STD-883 [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2 Table 7. [1][2] ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD-883; class 3 > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 4 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT - - 24 V reverse leakage current IRM PESD3V3U1UT VRWM = 3.3 V - 0.25 2 µA PESD5V0U1UT VRWM = 5.0 V - 0.03 1 µA PESD12VU1UT VRWM = 12 V -