PTFA180701E-V4-R0

PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 Features EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz 50 5 Efficiency 3 30 2 20 10 1 EVM 0 0 30 32 34 36 38 40 42 Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical EDGE performance - Average output power = 44 dBm - Gain = 16.5 dB - Efficiency = 40.5% - EVM = 2.0% • Typical CW performance - Output power at P–1dB = 72 W - Gain = 15.5 dB - Efficiency = 59% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power 40 Drain Efficiency (%) EVM RMS (avg. %) . 4 • 44 46 Output Power, avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 44 dBm, ƒ = 1836.6 MHz Characteristic Symbol Min Typ Max Unit EVM RMS — 2.0 — % @ 400 kHz ACPR — –62 — dBc @ 600 kHz ACPR — –76 — dBc Gain Gps — 16.5 — dB Drain Efficiency ηD — 40.5 — % Error Vector Magnitude Modulation Spectrum All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 03.1, 2009-02-20 PTFA180701E PTFA180701F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16.5 — dB Drain Efficiency ηD 44 45 — % Intermodulation Distortion IMD — –30 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.125 — Ω Operating Gate Voltage VDS = 28 V, ID = 550 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 201 W 1.15 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 70 W CW) RθJC 0.87 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA180701E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA180701E PTFA180701E V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA180701F *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 03.1, 2009-02-20 PTFA180701E PTFA180701F Typical Performance (measurements taken in production test fixture) Edge EVM and Modulation Spectrum vs. Quiescent Current Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz 2.4 -20 2.2 -30 EVM -40 1.8 400 kHz -50 1.6 -60 1.4 -70 1.2 600 kHz 1.0 0.40 0.50 -80 50 -45 40 -50 ACP Up 30 20 -65 -70 0 30 34 36 38 40 42 44 46 Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz -40 50 Efficiency 40 400 kHz 30 -70 20 600 kHz 10 -25 70 -30 60 3rd Order -35 IMD (dBc) -50 Drain Efficiency (%) Modulation Spectrum (dBc) 32 Output Power, Avg. (dBm) EDGE Modulation Spectrum Performance -80 -60 Efficiency Quiescent Current (A) -60 -55 ALT Up 10 -90 0.70 0.60 -40 ACP Low -40 50 40 5th 7th -45 30 -50 20 -55 -90 32 34 36 38 40 42 44 -60 46 0 30 Output Power (dBm) Data Sheet 10 Efficiency 0 30 Efficiency (%) 2.0 60 Adj. Ch. Power Ratio (dBc) -10 Drain Efficiency (%) 2.6 Modulation Spectrum (dBc) EVM RMS (avg. %) . VDD = 28 V, ƒ = 1836.6 MHz, POUT = 44 dBm 35 40 45 50 Output Power, PEP (dBm) 3 of 11 Rev. 03.1, 2009-02-20 PTFA180701E PTFA180701F Typical Performance (cont.) Broadband Test Fixture Performance (P–1dB) CW Broadband Performance VDD = 28 V, IDQ = 550mA VDD = 28 V, IDQ = 550 mA, POUT = 43 dBm 70 17 50 Output Power 16 40 15 Gain 14 1760 1800 1840 30 Gain 45 40 10 0 35 -10 30 Return Loss -20 -30 20 1760 1780 1800 1820 1840 1860 1880 1900 1920 Frequency (MHz) Frequency (MHz) IM3 vs. Output Power at Selected Biases Power Sweep VDD = 28 V, ƒ1 = 1849, ƒ2 = 1840 MHz VDD = 28 V, ƒ = 1880 MHz 18.0 -20 -25 Power Gain (dB) -35 IDQ = 825 mA -40 -45 -50 IDQ = 825 mA 17.5 IDQ = 275 mA -30 IMD (dBc) 20 Efficiency 25 20 1920 1880 30 50 Efficiency (%) 60 Output Power (dBm) & Efficiency (%) Gain (dB) 18 40 55 Drain Efficiency Gain, Return Loss (dB) 19 IDQ = 550 mA 17.0 16.5 IDQ = 550 mA 16.0 15.5 15.0 -55 IDQ = 275 mA 14.5 -60 26 30 34 38 42 35 46 39 41 43 45 47 49 Output Power (dBm) Output Power, Avg. (dBm) Data Sheet 37 4 of 11 Rev. 03.1, 2009-02-20 PTFA180701E PTFA180701F Typical Performance (cont.) Gain & Efficiency vs. Output Power Output Power (P–1dB) vs. Drain Voltage VDD = 28 V, IDQ = 550 mA, ƒ = 1880 MHz 19 58 Efficiency 52 Gain 17 46 40 16 34 15 28 14 22 13 16 12 10 0 10 20 30 40 50 60 70 50 Output Power (dBm) 64 Drain Efficiency (%) 20 18 Gain (dB) IDQ = 550 mA, ƒ = 1880 MHz 49 48 47 46 24 80 26 Voltage normalized to typical gate voltage, series show current Drain Efficiency (%) 35 30 -30 1.03 0.15 A -35 1.02 0.44 A 1.01 0.73 A -40 ACP ƒ C – 0.75 MHz -45 25 -50 20 -55 15 -60 10 ACPR ƒ C + 1.98 MHz 5 0 -65 -70 Normalized Bias Voltage (V) Efficiency Adj. Ch. Power Ratio (dBc) TCASE = 25°C 40 -75 30 32 34 36 38 40 42 44 1.10 A 1.00 2.20 A 0.99 3.30 A 0.98 4.41 A 0.97 5.51 A 0.96 0.95 -20 46 0 20 40 60 80 100 Case Temperature (°C) Output Power, Avg. (dBm) Data Sheet 32 Bias Voltage vs. Temperature IS-95 CDMA Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz TCASE = 90°C 30 Drain Voltage (V) Output Power (W) 45 28 5 of 11 Rev. 03.1, 2009-02-20 PTFA180701E PTFA180701F Broadband Circuit Impedance 0 .1 Z0 = 50 Ω D G Z Load 0.3 0.2 1920 MHz 0.1 Z Load 0.0 Z Source 1760 MHz S 0.1 MHz R jX R jX 1760 7.9 –10.3 4.6 –1.4 1800 7.4 –10.0 4.5 –1.1 1840 7.0 –9.7 4.5 –0.8 1880 6.5 –9.3 4.4 –0.3 1920 6.1 –8.9 4.3 –0.1 Z Source VEL Z Load Ω 1920 MHz WA