PTFA180701E
PTFA180701F
Thermally-Enhanced High Power RF LDMOS FETs
70 W, 1805 – 1880 MHz
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed
for GSM and GSM EDGE power amplifier applications in the 1805 MHz to
1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFA180701E
Package H-36265-2
PTFA180701F
Package H-37265-2
Features
EDGE EVM Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz
50
5
Efficiency
3
30
2
20
10
1
EVM
0
0
30
32
34
36
38
40
42
Thermally-enhanced packages, Pb-free and
RoHS-compliant
•
Broadband internal matching
•
Typical EDGE performance
- Average output power = 44 dBm
- Gain = 16.5 dB
- Efficiency = 40.5%
- EVM = 2.0%
•
Typical CW performance
- Output power at P–1dB = 72 W
- Gain = 15.5 dB
- Efficiency = 59%
•
Integrated ESD protection: Human Body
Model, Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
70 W (CW) output power
40
Drain Efficiency (%)
EVM RMS (avg. %) .
4
•
44
46
Output Power, avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 44 dBm, ƒ = 1836.6 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
EVM RMS
—
2.0
—
%
@ 400 kHz
ACPR
—
–62
—
dBc
@ 600 kHz
ACPR
—
–76
—
dBc
Gain
Gps
—
16.5
—
dB
Drain Efficiency
ηD
—
40.5
—
%
Error Vector Magnitude
Modulation Spectrum
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15.5
16.5
—
dB
Drain Efficiency
ηD
44
45
—
%
Intermodulation Distortion
IMD
—
–30
–29
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, V GS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.125
—
Ω
Operating Gate Voltage
VDS = 28 V, ID = 550 mA
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
201
W
1.15
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 70 W CW)
RθJC
0.87
°C/W
Ordering Information
Type and Version
Package Type
Package Description
Marking
PTFA180701E
V4
H-36265-2
Thermally-enhanced slotted flange, single-ended
PTFA180701E
PTFA180701E
V4
H-37265-2
Thermally-enhanced earless flange, single-ended
PTFA180701F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
Typical Performance (measurements taken in production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
Three-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz
2.4
-20
2.2
-30
EVM
-40
1.8
400 kHz
-50
1.6
-60
1.4
-70
1.2
600 kHz
1.0
0.40
0.50
-80
50
-45
40
-50
ACP Up
30
20
-65
-70
0
30
34
36
38
40
42
44
46
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz,
tone spacing = 1 MHz
VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz
-40
50
Efficiency
40
400 kHz
30
-70
20
600 kHz
10
-25
70
-30
60
3rd Order
-35
IMD (dBc)
-50
Drain Efficiency (%)
Modulation Spectrum (dBc)
32
Output Power, Avg. (dBm)
EDGE Modulation Spectrum Performance
-80
-60
Efficiency
Quiescent Current (A)
-60
-55
ALT Up
10
-90
0.70
0.60
-40
ACP Low
-40
50
40
5th
7th
-45
30
-50
20
-55
-90
32
34
36
38
40
42
44
-60
46
0
30
Output Power (dBm)
Data Sheet
10
Efficiency
0
30
Efficiency (%)
2.0
60
Adj. Ch. Power Ratio (dBc)
-10
Drain Efficiency (%)
2.6
Modulation Spectrum (dBc)
EVM RMS (avg. %) .
VDD = 28 V, ƒ = 1836.6 MHz, POUT = 44 dBm
35
40
45
50
Output Power, PEP (dBm)
3 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
Typical Performance (cont.)
Broadband Test Fixture Performance (P–1dB)
CW Broadband Performance
VDD = 28 V, IDQ = 550mA
VDD = 28 V, IDQ = 550 mA, POUT = 43 dBm
70
17
50
Output Power
16
40
15
Gain
14
1760
1800
1840
30
Gain
45
40
10
0
35
-10
30
Return Loss
-20
-30
20
1760 1780 1800 1820 1840 1860 1880 1900 1920
Frequency (MHz)
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
Power Sweep
VDD = 28 V, ƒ1 = 1849, ƒ2 = 1840 MHz
VDD = 28 V, ƒ = 1880 MHz
18.0
-20
-25
Power Gain (dB)
-35
IDQ = 825 mA
-40
-45
-50
IDQ = 825 mA
17.5
IDQ = 275 mA
-30
IMD (dBc)
20
Efficiency
25
20
1920
1880
30
50
Efficiency (%)
60
Output Power (dBm) &
Efficiency (%)
Gain (dB)
18
40
55
Drain Efficiency
Gain, Return Loss (dB)
19
IDQ = 550 mA
17.0
16.5
IDQ = 550 mA
16.0
15.5
15.0
-55
IDQ = 275 mA
14.5
-60
26
30
34
38
42
35
46
39
41
43
45
47
49
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
37
4 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
Output Power (P–1dB) vs. Drain Voltage
VDD = 28 V, IDQ = 550 mA, ƒ = 1880 MHz
19
58
Efficiency
52
Gain
17
46
40
16
34
15
28
14
22
13
16
12
10
0
10
20
30
40
50
60
70
50
Output Power (dBm)
64
Drain Efficiency (%)
20
18
Gain (dB)
IDQ = 550 mA, ƒ = 1880 MHz
49
48
47
46
24
80
26
Voltage normalized to typical gate voltage,
series show current
Drain Efficiency (%)
35
30
-30
1.03
0.15 A
-35
1.02
0.44 A
1.01
0.73 A
-40
ACP ƒ C – 0.75 MHz
-45
25
-50
20
-55
15
-60
10
ACPR ƒ C + 1.98 MHz
5
0
-65
-70
Normalized Bias Voltage (V)
Efficiency
Adj. Ch. Power Ratio (dBc)
TCASE = 25°C
40
-75
30
32
34
36
38
40
42
44
1.10 A
1.00
2.20 A
0.99
3.30 A
0.98
4.41 A
0.97
5.51 A
0.96
0.95
-20
46
0
20
40
60
80
100
Case Temperature (°C)
Output Power, Avg. (dBm)
Data Sheet
32
Bias Voltage vs. Temperature
IS-95 CDMA Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz
TCASE = 90°C
30
Drain Voltage (V)
Output Power (W)
45
28
5 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
Broadband Circuit Impedance
0 .1
Z0 = 50 Ω
D
G
Z Load
0.3
0.2
1920 MHz
0.1
Z Load
0.0
Z Source
1760 MHz
S
0.1
MHz
R
jX
R
jX
1760
7.9
–10.3
4.6
–1.4
1800
7.4
–10.0
4.5
–1.1
1840
7.0
–9.7
4.5
–0.8
1880
6.5
–9.3
4.4
–0.3
1920
6.1
–8.9
4.3
–0.1
Z Source
VEL
Z Load Ω
1920 MHz
WA