PTVA102001EA-V1-R0

PTVA102001EA Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Power Sweep, Pulsed RF • Input matched VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 300µs pulse width, 10% duty cycle • Capable of handling 10:1 VSWR @50 V, 200 W (CW) output power 60 60 55 50 50 30 1030 MHz 1090 MHz 1030 MHz 1090 MHz 40 35 40 Output Power 45 25 30 PIN (dBm) 35 • Low thermal resistance • Pb-free and RoHS compliant 20 a102001ea_300us_g1 20 • Integrated ESD protection 70 Efficiency Efficiency (%) POUT (dBm) 65 PTVA102001EA Package H-36265-2 40 10 RF Characteristics Pulsed RF Performance (tested in Wolfspeed production test fixture) VDD = 50 V, IDQ = 100 mA, POUT = 200 W, ƒ = 1090 MHz, 300 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17 18.5 — dB Drain Efficiency hD 56 59.5 — % All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 2 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 100 mA, Input signal (tr = 5 ns, tf = 6.5 ns), TCASE = 25°C, class AB test Mode of Operation ƒ (MHz) IRL (dB) 300 µs, 10% Duty Cycle 1030 –10 P1dB P3dB Gain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) 18.5 60 204 16.5 62 240 Pdroop (pulse) @ 200 W tr (ns) tf (ns) 0.10 6.0 7.9 1 ms, 10% Duty Cycle 1030 –10 18.3 60 200 16.3 62 235 0.20 — — 20 ms, 10% Duty Cycle 1030 –10 18.2 59 195 16.2 61 225 0.25 — — 16 ms, 50% Duty Cycle 1030 –10 18.2 58 190 16.2 60 215 0.30 — — DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 111 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.34 — W Operating Gate Voltage VDS = 50 V, IDQ = 100 mA VGS 3.1 3.35 3.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Symbol Value Unit RqJC 0.70 °C/W Thermal Characteristics TCASE = 70°C, 167 W (CW), 50 V, IDQ = 100 mA, 1030 MHz Characteristic Thermal Resistance Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 PTVA102001EA Ordering Information Type and Version Order Code Package Description Shipping PTVA102001EA V1 R0 PTVA102001EA-V1-R0 H-36265-2, bolt-down Tape & Reel, 50 pcs PTVA102001EA V1 R2 PTVA102001EA-V1-R2 H-36265-2, bolt-down Tape & Reel, 250 pcs Typical RF Performance (data taken in production test fixture) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 1ms pulse width, 10% duty cycle VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 1ms pulse width, 10% duty cycle 60 60 19 55 50 18 POUT (dBm) 50 40 Output Power 30 45 1030 MHz 1090 MHz 1030 MHz 1090 MHz 40 35 a102001ea_1ms_g1 20 25 30 PIN (dBm) Rev. 04, 2018-06-12 35 40 Gain (dB) 20 Efficiency Efficiency (%) 70 65 Gain 17 16 20 15 10 14 1030 MHz 1090 MHz a102001ea_1ms_g2 22 26 30 34 38 42 PIN (dBm) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 4 Typical RF Performance (cont.) Pulsed RF Performance Pulsed RF Performance VDD = 50 V, IDQ = 100 mA, POUT = 200 W, 1ms pulse width, 10% duty cycle 20 VDD = 50 V, IDQ = 100 mA, POUT = 200 W, 1ms pulse width, 10% duty cycle 70 0.14 19 60 0.13 18 50 -8 17 40 16 1025 1075 -10 0.11 1050 VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 16ms pulse width, 50% duty cycle POUT (dBm) 60 19 50 55 35 20 40 Output Power 30 1030 MHz 1090 MHz 1030 MHz 1090 MHz 20 a102001ea_16ms_g1 20 25 30 PIN (dBm) Rev. 04, 2018-06-12 35 40 10 18 Gain (dB) Efficiency 70 Efficiency (%) 65 40 -12 1100 a102001ea_1ms_g4 1075 Power Sweep, Pulsed RF Power Sweep, Pulsed RF 45 -11 IRL Frequency (MHz) VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 16ms pulse width, 50% duty cycle 50 IRL (dB) 0.12 Frequency (MHz) 60 -9 Power Droop 0.10 1025 30 1100 a102001ea_1ms_g3 1050 Power Droop (dB) Gain Efficiency (%) Gain (dB) Efficiency Gain 17 16 15 14 13 1030 MHz 1090 MHz a102001ea_16ms_g2 20 25 30 35 40 PIN (dBm) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 5 PTVA102001EA Typical RF Performance (cont.) Pulsed RF Performance Pulsed RF Performance VDD = 50 V, IDQ = 100 mA, POUT = 190 W, 16ms pulse width, 50% duty cycle VDD = 50 V, IDQ = 100 mA, POUT = 190 W, 16ms pulse width, 50% duty cycle 20 0.24 70 -8 18 50 Gain 17 40 16 1025 1075 -10 0.16 -12 Power Droop 0.12 0.08 1025 30 1100 a102001ea_16ms_g3 1050 0.20 Power Sweep, Pulsed RF 60 19 55 50 18 POUT (dBm) 45 30 1030 MHz 1090 MHz 1030 MHz 1090 MHz 40 35 40 20 Rev. 04, 2018-06-12 25 30 PIN (dBm) 35 a102001ea_128us_g1 40 Gain (dB) 60 Efficiency (%) 20 Output Power 1075 VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 128µS pulse width, 1% duty cycle 70 50 -16 1100 a102001ea_16ms_g4 1050 Power Sweep, Pulsed RF VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 128µS pulse width, 1% duty cycle Efficiency -14 Frequency (MHz) Frequency (MHz) 65 IRL (dB) 60 Efficiency (%) Gain (dB) 19 Power Droop (dB) IRL Efficiency Gain 17 16 20 15 10 14 1030 MHz 1090 MHz a102001ea_128us_g2 20 25 30 35 40 PIN (dBm) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 6 Typical RF Performance (cont.) Pulsed RF Performance Pulsed RF Performance VDD = 50 V, IDQ = 100 mA, POUT = 210 W, 128µS pulse width, 1% duty cycle VDD = 50 V, IDQ = 100 mA, POUT = 210 W, 128µS pulse width, 1% duty cycle 18 50 Gain 17 40 0.04 -10 0.03 -11 IRL -12 0.01 1025 30 1100 1075 1075 Frequency (MHz) Power Sweep, Pulsed RF Pulsed RF Performance VDD = 50 V, IDQ = 100 mA, TCASE = 25°C, 300µs pulse width, 10% duty cycle VDD = 50 V, IDQ = 100 mA, POUT = 205 W, 300µs pulse width, 10% duty cycle 20 20 19 80 19 Gain 18 Gain (dB) Gain (dB) -13 1100 a102001ea_128us_g4 1050 Frequency (MHz) 17 16 70 Gain 18 60 Efficiency 50 17 15 14 -9 Power Droop 0.02 a102001ea_128us_g3 1050 0.05 Efficiency (%) 16 1025 Efficiency (%) 60 -8 IRL (dB) Efficiency 19 Gain (dB) 0.06 70 Power Droop (dB) 20 1030 MHz 1090 MHz 22 26 30 34 PIN (dBm) Rev. 04, 2018-06-12 38 a102001ea_300us_g2 42 16 1025 40 1100 a102001ea_300us_g3 1050 1075 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 7 PTVA102001EA Typical RF Performance (cont.) CW Performance Pulsed RF Performance -7 0.09 -8 Power Droop 0.07 -9 0.05 -10 IRL 20 70 19 60 18 50 17 40 16 30 15 -11 14 0.01 1025 -12 1100 a102001ea_300us_g4 1050 1075 Frequency (MHz) 13 41 50 40 Efficiency 30 46 48 50 52 Output Power (dBm) Rev. 04, 2018-06-12 54 a102001ea_cw_g2 56 20 Gain (dB) Gain 44 51 53 55 0 5 18 Efficiency (%) Gain (dB) 60 42 49 20 70 12 10 47 Small Signal CW Performance Gain & Input Return Loss 80 18 14 45 VDD = 50 V, IDQ = 100 mA 36V Gain 40V Gain 45V Gain 50V Gain 36V Eff 40V Eff 45V Eff 16 43 Output Power (dBm) 300µs pulse width, 10% duty cycle, IDQ = 100mA, ƒ=1030 MHz 20 10 a102001ea_cw_g1 39 Pulse CW Performance at Various VDD 22 20 1030MHz Gain 1090MHz Gain 1030MHz Eff 1090MHz Eff 0 Gain 15 -5 13 -10 IRL 10 -15 -20 8 5 a102001ea_cw_g3 900 1000 1100 Input Return Loss (dB) 0.03 Gain (dB) 0.11 IRL (dB) Power Droop (dB) VDD = 50 V, IDQ = 100 mA, POUT = 205 W, 300µs pulse width, 10% duty cycle Efficiency (%) VDD = 50 V, IDQ = 100 mA -25 1200 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 8 Load Pull Performance D Z Source Z Load G S Pulsed CW signal: 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, IDQ = 90 mA P3dB Maximum Power Freq [MHz] ZlN [W] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 960 0.97 – j4.50 54.99 315 16.56 59.8 2.04 – j0.34 1030 1.25 – j5.26 54.59 288 15.63 57.5 2.26 – j0.43 1090 1.80 – j5.85 54.53 284 15.64 58.9 1.77 – j0.33 1150 2.37 – j7.11 54.53 284 15.23 57.0 2.04 – j0.65 1200 2.51 – j6.97 54.31 270 15.13 55.3 2.09 – j0.67 1300 4.92 – j7.48 54.55 285 14.70 56.4 1.80 – j0.99 1400 10.54 – j3.45 54.41 276 14.27 55.7 1.43 – j1.28 1500 7.87 – j0.31 54.36 273 13.62 53.1 1.66 – j1.93 1600 3.97 – j1.99 54.19 262 13.10 52.3 1.49 – j2.21 Pulsed CW signal: 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, IDQ = 90 mA P3dB Maximum Efficiency Freq [MHz] ZlN [W] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 960 0.97 – j4.50 53.57 228 18.32 70.0 1.73 + j1.19 1030 1.25 – j5.26 53.42 220 17.35 67.2 1.63 + j0.98 1090 1.80 – j5.85 53.38 218 17.14 67.3 1.50 + j0.72 1150 2.37 – j7.11 53.47 222 16.82 65.8 1.41 + j0.42 1200 2.51 – j6.97 52.40 174 17.04 65.4 1.08 + j0.60 1300 4.92 – j7.48 53.17 207 16.41 65.5 1.17 – j0.02 1400 10.54 – j3.45 52.99 199 15.95 63.4 0.85 – j0.61 1500 7.87 – j0.31 53.17 208 15.20 60.8 1.01 – j1.19 1600 3.97 – j1.99 53.15 207 14.51 58.5 0.94 – j1.66 Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 9 PTVA102001EA Load Pull Performance (cont.) Pulsed CW signal: 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, IDQ = 90 mA P3dB Z Optimized Freq [MHz] ZlN [W] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 960 0.97 – j4.50 54.51 282 17.55 67.5 1.94 + j0.54 1030 1.25 – j5.26 54.18 262 16.79 65.1 1.85 + j0.51 1090 1.80 – j5.85 54.17 261 16.54 65.3 1.71 + j0.28 1150 2.37 – j7.11 54.12 258 16.28 63.9 1.65 + j0.04 1200 2.51 – j6.97 53.78 239 16.23 62.9 1.48 + j0.06 1300 4.92 – j7.48 53.99 251 15.79 62.3 1.54 – j0.32 1400 10.54 – j3.45 53.89 245 15.34 62.0 1.07 – j0.84 1500 7.87 – j0.31 53.86 243 14.71 59.5 1.22 – j1.43 1600 3.97 – j1.99 53.71 235 14.09 57.5 1.05 – j1.82 See next page for reference circuit information Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 10 Reference Circuit, 1030 – 1090 MHz Reference Circuit Assembly DUT PTVA102001EA Test Fixture Part No. LTN/PTVA102001EA V1 PCB Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, εr = 6.15 C210 VGS RO6006, .025MIL (62) C203 C102 C104 R105 R102 R104 C207 + S3 S2 S1 R106 C209 C106 C107 C206 RO6006, .025MIL (62) R101 C101 VDD C208 R201 C201 R103 C103 R107 C105 RF_OUT C202 RF_IN C108 PTVA102001EA _OUT_01A C205 VDD C211 PTVA102001EA_IN_02A C204 R202 p tv a 1 0 2 0 01 e a _ C D _ 0 6 - 1 2 - 2 0 1 8 _ W S Reference circuit assembly diagram (not to scale) Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 11 PTVA102001EA Reference Circuit (cont.) Components Information Component Description Manufacturer P/N C101 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C102, C103, C104 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C105, C107 Capacitor, 39 pF ATC ATC100B390KW500XB C106 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C108 Capacitor, 3.6 pF ATC ATC100B3R6CW500XB R101 Resistor, 5.6 Ω Panasonic Electronic Components ERJ-8RQJ5R6V R102, R107 Resistor, 10 Ω Panasonic Electronic Components ERJ-8GEYJ100V R103 Resistor, 1.3K Ω Panasonic Electronic Components ERJ-3GEYJ132V R104 Resistor, 1.2K Ω Panasonic Electronic Components ERJ-3GEYJ122V R105 Resistor, 2000 Ω Panasonic Electronic Components ERJ-8GEYJ202V R106 Resistor, 1000 Ω Panasonic Electronic Components ERJ-8GEYJ102V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Potentiometer, 2k Ω Bourns Inc. 3224W-1-202E C201, C211 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C202, C205, C209 Capacitor, 39 pF ATC ATC100B390KW500XB C203, C204 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C206 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C207 Capacitor, 10 µF Cornell Dubilier Electronics (CDE) SEK100M100ST C208 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C210 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R201, R202 Resistor, 5.6 Ω Panasonic Electronic Components ERJ-8RQJ5R6V Input Output Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 12 Package Outline Specifications Package H-36265-2 45° X 2.03 [.080] 6. ALL FOUR CORNERS 2X 7.11 [.280] 2.66±.51 [.105±.020] D S FLANGE 9.78 [.385] 3.05 [.120] LID 10.16±.25 [.400±.010] C L G 2X R1.52 [R.060] C L 4X R0.63 [R.025] MAX SPH 1.57 [.062] 15.49±.51 [.610±.020] 4X R1.52 [R.060] 15.23 [.600] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 1.02 [.040] 20.31 [.800] 6. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 5. Lead thickness: 0.10 + 0.051/–0.025 mm [0.004 + 0.002/–0.001 inch]. 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Rev. 04, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA102001EA 13 Revision History Revision Date Data Sheet Type Page Subjects (major changes at each revision) 01 2015-07-22 Advance All Data Sheet reflects advance specification for product development 02 2015-09-22 Production All Data Sheet reflects released product specification 02.1 2017-02-08 Production 2 Updated operating voltage and junction temperature 03 2017-08-17 Production 1 2 5 8, 9 Extend bandwidth to 1600 MHz New Thermal Characteristics table Remove duplicate graph Add load pull points 04 2018-06-12 Production All Converted to Wolfspeed Data Sheet For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 04, 2018-06-12 www.wolfspeed.com