PTVA120251EAV2XWSA1

PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle • Unmatched input and output • High gain and efficiency 70 • Integrated ESD protection 55 60 • Low thermal resistance 50 50 Efficiency Output Power 45 40 1200 MHz 1300 MHz 1400 MHz 1200 MHz 1300 Mhz 1400 MHz 40 35 30 30 22 26 30 • Excellent ruggedness • Pb-free and RoHS-compliant • Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW conditions 20 a120251ea-v2-gr1a``` 18 • ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001 Drain Efficiency (%) 60 Output Power (dBm) PTVA120251EA Package H-36265-2 34 10 Input Power (dBm) RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 0.02 A, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test Mode of operation P1dB P3dB ƒ IRL Gain Eff POUT Gain Eff (MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 30 W (ns) (ns) Pulsed RF 1200 12 16.4 52 31 14.4 56 41 0.27 6 8 Pulsed RF 1300 11 16.0 56 32 14.0 59 40 0.20 6 8 Pulsed RF 1400 14 15.8 53 34 13.8 56 38 0.24 6 8 POUT Pdroop(pulse) tr tf All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V, IDQ = 0.02 A, POUT = 25 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 M Hz, 300 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency hD 47 54 — % Return Loss IRL — –13 –9 dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 1.4 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, VDD = 50 V, 25 W CW) RqJC 3.7 °C/W Ordering Information Type and Version Order Code Package and Description PTVA120251EA V2 PTVA120251EAV2XWSA1 H-36265-2, ceramic open-cavity, single-ended, bolt-down Tray PTVA120251EA V2 R250 PTVA120251EAV2R250XTMA1 H-36265-2, ceramic open-cavity, single-ended, bolt-down Tape & Reel, 250 pcs Data Sheet 2 of 14 Shipping Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (data taken in production test fixture) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle VDD = 50 V, IDQ = 20 mA, POUT = 25 W 300 µs pulse width, 12% duty cycle 19 19 70 17 16 15 1200 MHz 1300 MHz 1400 MHz 22 26 17 50 30 16 1150 34 Power Sweep, Pulsed RF Pulsed CW Performance at Selected VDD IDQ = 20 mA, ƒ = 1300 MHz 300 µs, 12% duty cycle -12 0.24 -14 0.20 -16 -18 Power Droop 0.12 -20 1350 40 13 20 Gain Efficiency a120251ea-v2-gr6 28 32 36 40 44 48 0 Output Power (dBm) Frequency (MHz) 60 15 11 -22 1450 a120251ea-v2-gr1d 1250 80 30 V 35 V 40 V 45 V 50 V 17 Gain (dB) Input Return Loss Input Return Loss (dB) Power Droop (dB) 19 -10 0.28 Data Sheet 1350 Frequency (MHz) 0.32 0.08 1150 40 1450 a120251ea-v2-gr1c 1250 Input Power (dBm) VDD = 50 V, IDQ = 20 mA at P1dB 300 µs pulse width, 12% duty cycle 0.16 55 Gain 45 a120251ea-v2-gr1b 18 60 Efficiency (%) 14 13 Efficiency 18 Drain Efficiency (%) 65 Gain (dB) Gain (dB) 18 3 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 2 ms pulse width, 10% duty cycle VDD = 50 V, IDQ = 20 mA 2 ms pulse width, 10% duty cycle POUT (dBm) 50 1200 MHz 40 1300 MHz 35 1200 MHz 30 1400 MHz 1300 Mhz 1400 MHz a120251ea-v2-gr2a 18 22 26 60 18 50 Output Power 45 19 30 34 40 30 20 Gain (dB) Efficiency 55 70 Drain Efficiency (%) 60 Gain 17 16 15 1200 MHz 1300 MHz 14 13 10 1400 MHz a120251ea-v2-gr2b 18 20 22 24 26 28 30 32 34 Input Power (dBm) Input Power (dBm) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA at P1dB 2 ms pulse width, 10% duty cycle VDD = 50 V, IDQ = 20 mA, POUT = 25 W 2 ms pulse width, 10% duty cycle 19 70 -10 0.26 Efficiency 17 50 Gain 0.22 0.20 0.18 -14 0.16 0.14 -16 Input Return Loss 0.12 16 1150 0.10 1150 40 1450 a120251ea-v2-gr2c 1200 1250 1300 1350 1400 Frequency (MHz) Data Sheet -12 Power Droop IRL (dB) 60 Power Droop (dB) 18 Drain Efficiency (%) Gain (dB) 0.24 -18 1450 a120251ea-v2-gr2d 1200 1250 1300 1350 1400 Frequency (MHz) 4 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 128 µs pulse width, 10% duty cycle VDD = 50 V, IDQ = 20 mA 128 µs pulse width, 10% duty cycle 60 70 19 60 18 50 Output Power 45 40 1200 MHz 1300 MHz 1400 MHz 1200 MHz 1300 Mhz 1400 MHz 40 35 30 30 a120251ea-gr3a 18 22 26 30 34 Gain 17 16 15 20 14 10 13 1200 MHz 1300 MHz 1400 MHz a120251ea-gr3b 18 Power In (dBm) 22 24 26 28 30 32 34 Power In (dBm) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA at P1dB 128 µs pulse width, 10% duty cycle VDD = 50 V, IDQ = 20 mA, POUT = 25 W 128 µs pulse width, 10% duty cycle 19 70 Efficiency 17 50 Gain Power Droop (dB) 60 Drain Efficiency (%) 18 -10 0.18 0.16 Gain (dB) 20 Power Droop -12 0.14 0.12 -14 0.10 0.08 0.06 IRL (dB) 50 Gain (dB) 55 Drain Efficiency (%) Output Power (dBm) Efficiency -16 Input Return Loss 0.04 16 1150 0.02 1150 40 1450 a120251ea-gr3c 1250 1350 Frequency (MHz) Data Sheet -18 1450 a120251ea-gr3d 1250 1350 Frequency (MHz) 5 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 16 ms pulse width, 50% duty cycle VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 16 ms pulse width, 50% duty cycle 50 19 60 18 50 45 40 40 30 1200 MHz 1300 MHz 1400 MHz 35 30 a120251ea-v2-gr4a 18 20 22 24 26 28 30 32 17 Gain 16 15 14 20 13 10 12 1200 MHz 1300 MHz 1400 MHz a120251ea-v2-gr4b 18 Input Power (dBm) 20 22 24 Power Sweep, Pulsed RF 32 34 Power Sweep, Pulsed RF 0.32 70 -4 60 Efficiency 17 50 Gain Power Droop (dB) 18 Drain Efficiency (%) 0.28 Gain (dB) 30 VDD = 50 V, IDQ = 20 mA at P1dB 16 ms pulse width, 50% duty cycle 19 -6 Input Return Loss 0.24 -8 0.20 0.16 -10 Power Droop -12 0.12 0.08 1150 40 1450 a120251ea-v2-gr4c 1250 1350 Frequency (MHz) Data Sheet 28 Input Power (dBm) VDD = 50 V, IDQ = 20 mA, POUT = 25 W 16 ms pulse width, 50% duty cycle 16 1150 26 IRL (dB) 55 70 Gain (dB) Output Power Efficiency Drain Efficiency (%) Output Power (dBm) 60 -14 -16 1450 a120251ea-v2-gr4d 1250 1350 Frequency (MHz) 6 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (tested with LTN/PTVA120251EA E4 test fixture, 960 MHz – 1215 MHz) CW Performance Small Signal CW Performance Gain (dB) 20.0 5 65 17.5 0 15.0 -5 12.5 -10 10.0 -15 17 55 16 45 15 35 14 13 12 25 1200 MHz 1300 MHz 1400 MHz a120251ea-v2-gr5 32 34 36 38 40 42 44 46 Power Gain (dB) Gain Efficiency 18 75 Efficiency (%) 19 15 7.5 5 5.0 Gain -20 IRL Input Return Loss (dB) VDD = 50 V, IDQ = 80 mA VDD = 50 V, IDQ = 20 mA -25 1700 a120251ea-v2-gr7 900 1100 1300 1500 Frequency (MHz) Output Power (dBm) See next page for further performance characterization Data Sheet 7 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (cont.) (tested with LTN/PTVA120251EA E4 test fixture, 960 MHz – 1215 MHz) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 20 mA, VDD = 50 V, TCASE = 25°C, 128 µs pulse width, 10% duty cycle IDQ = 20 mA, VDD = 50 V, TCASE = 25°C, 128 µs pulse width, 10% duty cycle 65 20 Drain Efficiency (%) 18 Gain (dB) Gain 16 14 960 MHz 1030 MHz 1090 MHz 1150 MHz 1215 MHz 12 10 55 45 Efficiency 35 25 15 5 a120251e1a_g4-1 0 5 10 15 20 25 30 35 960 MHz 1030 MHz 1090 MHz 1150 MHz 1215 MHz 40 a120251e1a_g4-2 0 5 10 Output Power (W) 25 30 35 40 CW Performance VDD = 50 V, IDQ = 20 mA VDD = 50 V, IDQ = 20 mA 60 Drain Efficiency (%) 20 18 Gain (dB) 20 Output Power (W) CW Performance Gain 16 14 960 MHz 1030 MHz 1090 MHz 1150 MHz 1215 MHz 12 10 15 5 10 15 20 25 30 35 Efficiency 30 960 MHz 1030 MHz 1090 MHz 1150 MHz 1215 MHz 20 10 a120251e1a_gCW-4 0 5 10 15 20 25 30 35 Output Power (W) Output Power (W) Data Sheet 40 0 a120251e1a_gCW-3 0 50 8 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Typical RF Performance (cont.) (tested with LTN/PTVA120251EA E3 test fixture, 470 MHz – 860 MHz) Test Conditions: DVB-T 8 MHz unclipped input signal, output PAR measured at 0.01% point of CCDF curve, ACPR measured over 200 KHz BW at 4.1 MHz offset from carrier center frequency. DVB-T Performace ACPR vs Frequency at various Average POUT DVB-T Performace Efficiency vs Frequency at various Average POUT VDD = 40 V, IDQ = 140 MA VDD = 40 V, IDQ = 140 mA 30 -30 -32 Drain Efficiency (%) ACPR (dB) 25 POUT = 36 dBm -34 -36 POUT = 30 dBm -38 -40 POUT = 32 dBm POUT = 34 dBm -42 -44 POUT = 34 dBm 15 10 POUT = 32 dBm POUT = 30 dBm 5 -46 -48 POUT = 36 dBm 20 0 a120251ea_40V_g1 450 550 650 750 850 Frequency (MHz) a120251ea_40V_g2 450 550 650 750 850 Frequency (MHz) DVB-T Performace PAR @ 0.01% CCDF vs Frequency at various Average POUT VDD = 40 V, IDQ = 140 mA PAR @ 0.01% CCDF (dB) 11 POUT = 30 dBm 10 POUT = 32 dBm 9 POUT = 34 dBm 8 POUT = 36 dBm 7 6 a120251ea_40V_g3 450 550 650 750 850 Frequency (MHz) Data Sheet 9 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Broadband Circuit Impedance D Z Source Z Load G S Z Source W Z Load W Freq [MHz] R jX R jX 1200 4.31 –0.22 6.46 7.63 1300 5.06 –0.79 6.29 7.27 1400 4.94 –1.96 6.14 8.72 See next page for reference circuit information Data Sheet 10 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Reference Circuits DUT Test Fixture Part No. PCB Frequency (MHz) PTVA120251EA LTN/PTVA120251EA V2 * Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 6.15 1200 – 1400 PTVA120251EA LTN/PTVA120251EA E2 † Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 1200 – 1400 PTVA120251EA LTN/PTVA120251EA E3 † Rogers 4350B, 0.762mm [.030"] thick, 2 oz. copper, εr = 3.48 470 – 860 PTVA120251EA LTN/PTVA120251EA E4 † Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 960 – 1215 * See pages 11 – 12 for assembly information. Find Gerber files for this reference circuit on the Infineon Web site at www.infineon.com/rfpower † Gerber files for this reference circuit are available on request. C802 R801 R803 C802 R804 C801 C203 S2 S1 R101 S2 VDD C201 C803 R805 R802 R102 C104 C103 R201 C202 R103 PTVA120251EA RF_IN C204 C102 C101 PTVA120251_IN_01A RO6006, 025 (62) C205 PTVA120251_OUT_02 RF_OUT RO6006, 025 (63) pt v a1 2 0 25 1 e a_ c d_ 9 -3 0 -1 4 Assembly diagram for reference circuit LTN/PTVA120251EA V2, 1200 MHz to 1400 MHz (not to scale) Data Sheet 11 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Reference Circuit (cont.) Components Information Component Description Manufacturer P/N C101, C102 Capacitor, 56 pF ATC ATC100B560JW500XB C103 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C104 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C801, C802, C803 Capacitor, 1000 pF Kemet C1812C560KHGACTU R101 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R102 Resistor, 0 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R103, R801 Resistor, 10 ohms Panasonic – ECG ERJ-3GEYJ100V R802, R805 Resistor, 2K ohms Panasonic Electronic Components ERJ-8GEYJ202V R803 Chip resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R804 Chip resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V S1 Potentiometer 2K ohms Bourns Inc. 3224W-1-202E S2 Voltage regulator Fairchild Semiconductor LM7805 S3 Transistor Fairchild Semiconductor BCP56 C201 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C202 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C203 Capacitor, 100 µF Cornell Dubilier Electronics SK101M100ST C204, C205 Capacitor, 56 pF ATC ATC100B560JW500XB C206 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R101 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8GEYJ5R6V Input Output Data Sheet 12 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA Package Outline Specifications Package H-36265-2 45° X 2.03 [.080] 6. ALL FOUR CORNERS 2X 7.11 [.280] 2.66±.51 [.105±.020] D S FLANGE 9.78 [.385] 3.05 [.120] LID 10.16±.25 [.400±.010] C L G 2X R1.52 [R.060] C L 4X R0.63 [R.025] MAX SPH 1.57 [.062] 15.49±.51 [.610±.020] 4X R1.52 [R.060] 15.23 [.600] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 1.02 [.040] 20.31 [.800] 6. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 5. Lead thickness: 0.10 + 0.051/–0.025 mm [0.004 + 0.002/–0.001 inch]. 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 13 of 14 Rev. 04.1, 2015-06-15 PTVA120251EA V2 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-04 Preliminary All First release of Data Sheet for pre-production product 02 2012-10-29 Preliminary 6 Add DVB-T performance graphs 03 2013-03-25 Production All 1–2 3–8 9 – 11 Data Sheet reflects released product specifications and performance Update tables with current data Add further graphs Add load pull performance and reference circuit information 04 2014-10-03 Production 11 – 12 1, 3 – 7 New circuit design. Characterization in new circuit. 04.1 2015-06-15 Production 2 Updated max of IRL in pulsed RF performance table We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-06-15 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 of 14 Rev. 04.1, 2015-06-15