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CGHV27060MP

CGHV27060MP

  • 厂商:

    WOLFSPEED

  • 封装:

    TSSOP20

  • 描述:

    RF MOSFET HEMT 50V 20TSSOP

  • 数据手册
  • 价格&库存
CGHV27060MP 数据手册
CGHV27060MP 60 W, DC - 2.7 GHz, 50 V, GaN HEMT for Communication Amplifiers and Pulse Radar Applications Description Cree’s CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4 mm x 6.5 mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band, or low S Band (PLZ .1CEN LK 5POS 1 Q1 Transistor CGHV27060MP 1 Electrical Characteristics When Tested in CGHV27060MP-AMP4, MILCOM Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (TC = 25˚C, F0 = 0.1 - 1.0 GHz unless otherwise noted) 1 Small Signal Gain G – 16.5 - dB VDD = 45 V, IDQ = 120 mA Output Power POUT – 47.8 – dBm VDD = 45 V, IDQ = 120 mA, PIN = 35 dBm Drain Efficiency η – 51.1 - % Output Mismatch Stress VSWR – 3:1 – Y VDD = 45 V, IDQ = 120 mA, PIN = 35 dBm No damage at all phase angles, VDD = 45 V, IDQ = 120 mA, PIN = 35 dBm Note: Measured in CGHV27060MP-AMP4 Application Circuit Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 9 Typical Performance in Application Circuit CGHV27060MP-AMP4, MILCOM Figure 5. Small Signal Gain and Return Losses of the CGHV27060MP Measured in Demonstration Amplifier Circuit CGHV27060MP-AMP4 VDD = 45 V, IDQ = 120 mA 30 GainGain andand Return Loss (dB) Return Loss (dB) 20 10 0 -10 -20 -30 S21 S11 -40 S22 -50 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Frequency (GHz) Frequency (GHz) 18 60 17 50 16 40 15 30 14 20 13 Drain Efficiency (%) 10 0.1 0.2 0.3 Pout (dBm) 0.4 Gain (dB) 70 Gain (dB) Output Power (dBm), Efficiency (%) Output Power (dBm), Efficiency (%) Figure 6. Power, Drain Efficiency, and Gain vs Frequency for the CGHV27060MP Measured in Demonstration Amplifier Circuit CGHV27060MP-AMP4 VDD = 45 V, IDQ = 120 mA Gain (dB) 0.5 0.6 0.7 0.8 0.9 1.0 12 Frequency (GHz) Frequency (GHz) Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 10 CGHV27060MP-AMP4 Demonstration Amplifier Circuit Schematic CGHV27060MP-AMP4 Demonstration Amplifier Circuit Outline 5 4 3 2 1 J1 C18 C17 C8 C5 C10 TX1 L4 Q1 R5 R2 R1 C1 R4 C14 L5 L2 J2 C13 C7 C6 C16 C15 C9 C2 R8 R3 C3 R6 L1 C4 C20 J3 C11 C12 C19 L3 R7 Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 11 CGHV27060MP-AMP4 Bill of Materials Designator Description Qty R4,7 RES,16W,0805,2%,18 OHMS, IMS 2 R1,2 RES, 13W,0603,5%, 20 OHMS, IMS 2 R3 RES,13W,0603,5%, 50 OHMS, IMS 1 R5, 6 RES, 25W,0805,5%, 130 OHMS, IMS 2 C19, C20 CAP, 1.2pF, +/-0.1pF, 0805, ATC600F 2 C2 CAP, 11pF, +/-2%, 0603, ATC600S 1 C3 CAP, 36pF, +/-2%, 0603, ATC600S 1 C1 CAP, 39pF, +/-2%, 0603, ATC600S 1 C10,14 CAP, 100pF, +/-5%, 0603, 100V, COG 2 C4 CAP, 150pF, +/-5%, ATC800B 1 C11, 12 CAP, 200pF, +/-5%, 0805, ATC600F 2 C5, 13 CAP, 470pF, +/-5%, 0805, 100V, X7R 2 C6, 15 CAP,1NF, 0805,100V, X7R 2 C7, 16 CAP,10NF, 0805,100V, X7R 2 C8, 17 CAP,100NF, 1206,100V, X7R 2 C9 CAP, 10UF, 10%, 1206,16V, X5R 1 C18 CAP, 33UF, 20%, F CASE, 63V 1 L2 IND, 14.7nH, 2% Air Core, Coilcraft 1 L1 IND, 47nH, 5% Air Core, Coilcraft 1 L3 IND, 82nH, 5% Air Core, Coilcraft 1 L4 IND, 471nH, 5%, 0805 Chip Inductor, Coilcraft 1 – Copper Plate 1 J2,J3 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 – PCB, Rogers RO4350B 20mils 1oz.Cu 101x64mm 1 – BASEPLATE, 4.00 X 2.50 X .49” modified 1 J1 HEADER RT>PLZ .1CEN LK 5POS 1 – 2-56 SOC HD SCREW 1/4 SS 4 – #2 SPLIT LOCKWASHER SS 4 TX1 Transformer, 30-1000 MHz SMD, IPP-5014 1 Q1 Transistor CGHV27060MP 1 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Symbol Level Test Methodology Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20 Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 12 Power dissipation CGHV27060MP Power Dissipation De-rating Curvederating curve vs. Max Tcase Pulsed (100 uS/ 10% duty) 100 90 Power dissipation (W) Power Dissipation (W) 80 70 60 50 Note 1 40 30 20 Linear CW 10 0 Pulse 100uS / 10% 0 50 100 150 200 250 Case Temperature (C) Case Temperature (C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Product Dimensions CGHV27060MP (4.4 mm 20-Lead Package) Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 13 Part Number System CGHV27060MP Plastic Overmold Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 2.7 GHz Power Output 60 W Package MP - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2. Rev 4.1 – July 2021 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 14 Product Ordering Information Order Number Description Unit of Measure Image CGHV27060MP GaN HEMT Each CGHV27060MP-AMP1 Test board with GaN HEMT installed Each CGHV27060MP-AMP3 Test board with GaN HEMT installed Each CGHV27060MP-AMP4 Test board with GaN HEMT installed Each Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV27060MP 15 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/rf Sales Contact rfsales@cree.com Notes & Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2015 – 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 4.1 – July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
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