CGHV27060MP
60 W, DC - 2.7 GHz, 50 V, GaN HEMT for Communication
Amplifiers and Pulse Radar Applications
Description
Cree’s CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT)
housed in a small plastic SMT package 4.4 mm x 6.5 mm. The transistor is a broadband device
with no internal input or output match which allows for the agility to apply to a wide range of
frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for
pulsed applications at UHF, L Band, or low S Band (PLZ .1CEN LK 5POS
1
Q1
Transistor CGHV27060MP
1
Electrical Characteristics When Tested in CGHV27060MP-AMP4, MILCOM
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics (TC = 25˚C, F0 = 0.1 - 1.0 GHz unless otherwise noted)
1
Small Signal Gain
G
–
16.5
-
dB
VDD = 45 V, IDQ = 120 mA
Output Power
POUT
–
47.8
–
dBm
VDD = 45 V, IDQ = 120 mA, PIN = 35 dBm
Drain Efficiency
η
–
51.1
-
%
Output Mismatch Stress
VSWR
–
3:1
–
Y
VDD = 45 V, IDQ = 120 mA, PIN = 35 dBm
No damage at all phase angles,
VDD = 45 V, IDQ = 120 mA, PIN = 35 dBm
Note: Measured in CGHV27060MP-AMP4 Application Circuit
Rev 4.1 – July 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27060MP
9
Typical Performance in Application Circuit CGHV27060MP-AMP4, MILCOM
Figure 5. Small Signal Gain and Return Losses of the CGHV27060MP
Measured in Demonstration Amplifier Circuit CGHV27060MP-AMP4
VDD = 45 V, IDQ = 120 mA
30
GainGain
andand
Return
Loss (dB)
Return Loss (dB)
20
10
0
-10
-20
-30
S21
S11
-40
S22
-50
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Frequency (GHz)
Frequency (GHz)
18
60
17
50
16
40
15
30
14
20
13
Drain Efficiency (%)
10
0.1
0.2
0.3
Pout (dBm)
0.4
Gain (dB)
70
Gain (dB)
Output Power (dBm), Efficiency (%)
Output Power (dBm), Efficiency (%)
Figure 6. Power, Drain Efficiency, and Gain vs Frequency
for the CGHV27060MP Measured in Demonstration Amplifier Circuit CGHV27060MP-AMP4
VDD = 45 V, IDQ = 120 mA
Gain (dB)
0.5
0.6
0.7
0.8
0.9
1.0
12
Frequency (GHz)
Frequency (GHz)
Rev 4.1 – July 2021
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CGHV27060MP
10
CGHV27060MP-AMP4 Demonstration Amplifier Circuit Schematic
CGHV27060MP-AMP4 Demonstration Amplifier Circuit Outline
5
4
3
2
1
J1
C18
C17
C8
C5
C10
TX1
L4
Q1
R5
R2
R1
C1
R4
C14
L5
L2
J2
C13
C7
C6
C16
C15
C9
C2
R8
R3
C3
R6
L1
C4
C20
J3
C11
C12
C19
L3
R7
Rev 4.1 – July 2021
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CGHV27060MP
11
CGHV27060MP-AMP4 Bill of Materials
Designator
Description
Qty
R4,7
RES,16W,0805,2%,18 OHMS, IMS
2
R1,2
RES, 13W,0603,5%, 20 OHMS, IMS
2
R3
RES,13W,0603,5%, 50 OHMS, IMS
1
R5, 6
RES, 25W,0805,5%, 130 OHMS, IMS
2
C19, C20
CAP, 1.2pF, +/-0.1pF, 0805, ATC600F
2
C2
CAP, 11pF, +/-2%, 0603, ATC600S
1
C3
CAP, 36pF, +/-2%, 0603, ATC600S
1
C1
CAP, 39pF, +/-2%, 0603, ATC600S
1
C10,14
CAP, 100pF, +/-5%, 0603, 100V, COG
2
C4
CAP, 150pF, +/-5%, ATC800B
1
C11, 12
CAP, 200pF, +/-5%, 0805, ATC600F
2
C5, 13
CAP, 470pF, +/-5%, 0805, 100V, X7R
2
C6, 15
CAP,1NF, 0805,100V, X7R
2
C7, 16
CAP,10NF, 0805,100V, X7R
2
C8, 17
CAP,100NF, 1206,100V, X7R
2
C9
CAP, 10UF, 10%, 1206,16V, X5R
1
C18
CAP, 33UF, 20%, F CASE, 63V
1
L2
IND, 14.7nH, 2% Air Core, Coilcraft
1
L1
IND, 47nH, 5% Air Core, Coilcraft
1
L3
IND, 82nH, 5% Air Core, Coilcraft
1
L4
IND, 471nH, 5%, 0805 Chip Inductor, Coilcraft
1
–
Copper Plate
1
J2,J3
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST
2
–
PCB, Rogers RO4350B 20mils 1oz.Cu 101x64mm
1
–
BASEPLATE, 4.00 X 2.50 X .49” modified
1
J1
HEADER RT>PLZ .1CEN LK 5POS
1
–
2-56 SOC HD SCREW 1/4 SS
4
–
#2 SPLIT LOCKWASHER SS
4
TX1
Transformer, 30-1000 MHz SMD, IPP-5014
1
Q1
Transistor CGHV27060MP
1
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Moisture Sensitivity Level (MSL) Classification
Parameter
Symbol
Level
Test Methodology
Moisture Sensitivity Level
MSL
3 (168 hours)
IPC/JEDEC J-STD-20
Rev 4.1 – July 2021
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CGHV27060MP
12
Power dissipation
CGHV27060MP Power Dissipation De-rating
Curvederating curve vs. Max Tcase
Pulsed (100 uS/ 10% duty)
100
90
Power dissipation (W)
Power Dissipation (W)
80
70
60
50
Note 1
40
30
20
Linear CW
10
0
Pulse 100uS / 10%
0
50
100
150
200
250
Case Temperature (C)
Case Temperature (C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Product Dimensions CGHV27060MP (4.4 mm 20-Lead Package)
Rev 4.1 – July 2021
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CGHV27060MP
13
Part Number System
CGHV27060MP
Plastic Overmold
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Table 1.
Parameter
Value
Units
Upper Frequency1
2.7
GHz
Power Output
60
W
Package
MP
-
Note1: Alpha characters used in frequency code indicate a value
greater than 9.9 GHz. See Table 2 for value.
Table 2.
Rev 4.1 – July 2021
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
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CGHV27060MP
14
Product Ordering Information
Order Number
Description
Unit of Measure Image
CGHV27060MP
GaN HEMT
Each
CGHV27060MP-AMP1
Test board with GaN HEMT installed
Each
CGHV27060MP-AMP3
Test board with GaN HEMT installed
Each
CGHV27060MP-AMP4
Test board with GaN HEMT installed
Each
Rev 4.1 – July 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27060MP
15
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/rf
Sales Contact
rfsales@cree.com
Notes & Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree
in large quantities and are provided for information purposes only. Cree products are not warranted or authorized
for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where
a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by
Cree for any infringement of patents or other rights of third parties which may result from use of the information
contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.
© 2015 – 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
Rev 4.1 – July 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com