CGHV14500F
500 W, DC - 1800 MHz, GaN HEMT for L-Band
Radar Systems
Description
Package Types: 440117, 440133
PNs: CGHV14500F, CGHV14500P
Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically with high efficiency,
high gain and wide bandwidth capabilities, which makes
the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier
applications. The transistor could be utilized for band specific
applications ranging from 800 through 1600 MHz. The package
options are ceramic/metal flange and pill package.
Typical Performance Over 1.2 - 1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
1.4 GHz
Units
Output Power
545
540
530
530
530
W
Gain
16.4
16.3
16.2
16.2
16.2
dB
Drain Efficiency
69
69
68
66
65
%
Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm.
Features
•
•
•
•
Reference design amplifier 1.2 - 1.4 GHz Operation
FET tuning range UHF through 1800 MHz
500 W Typical Output Power
16 dB Power Gain
•
•
•
68% Typical Drain Efficiency
PLZ .1CEN LK 9POS
1
J4
CONNECTOR ; SMB, Straight, JACK,SMD
1
W1
CABLE ,18 AWG, 4.2
1
PCB, RO4350B, 0.020’ MIL THK, CGHV14500, 1.2-1.4GHZ
1
CGHV14500F
1
Q1
CGHV14500F-AMP Demonstration Amplifier Circuit
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
11
CGHV14500-AMP Demonstration Amplifier Circuit Outline
CGHV14500-AMP Demonstration Amplifier Circuit Schematic
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
12
Typical Performance Over 0.96 GHz - 1.3 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
0.96 GHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
Units
Output Power
800
805
675
625
585
W
Gain
18
18.1
17.3
17.0
16.7
dB
Drain Efficiency
70
75
74
77
64
%
Note: Measured in the CGHV14500-AMP2 amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm.
Typical Performance - CGHV14500-AMP2
CGHV14500-AMP2
Typical
Sparameters
CGHV14500-AMP2
Typical
Sparameters
VDDVdd
= 50=V,50IDQV,=Idq
500=mA
500 mA
20
15
Magnitude (dB)
Magnitude (dB)
10
5
S11
S21
S22
0
-5
-10
800
900
1000
1100
1200
Frequency (MHz)
1300
1400
1500
Frequency (MHz)
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
13
Typical Performance - CGHV14500-AMP2
Figure 2.CGHV14500-AMP2
- CGHV14500-AMP2
Sparameters
RF Typical
Performance
VDD
41 dBm,
dBm,Pulse
PulseWidth
Width==500
500us,
μs,Duty
Duty
Cycle
Vdd==50
50V,V,IDQ
Idq==500
500 mA,
mA, PIN
Pin == 41
Cycle
= 10%
10
%
1100
Output Power
Gain
1000
90
80
70
800
60
700
50
600
40
500
30
400
20
300
10
200
900
950
1000
1050
1100
1150
Frequency (MHz)
1200
1250
1300
Gain (dB) & Drain Efficiency (%)
900
Gain (dB) & Drain Efficiency (%)
Output Power (W)
Output Power (W)
Drain Efficiency
0
1350
Frequency (MHz)
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
14
CGHV14500F-AMP2 Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES,1/16W,0603,1%,562 OHMS
1
R2
RES, 5.1,OHM, +/- 1%, 1/16W,0603
1
R3
RES,1/16W,0603,1%,4.99K OHMS
1
C1, C7, C8, C23
CAP, 10pF, +/-0.1pF, 250V, 0805, ATC600F
4
C2, C15, C16
CAP, 5.6pF, +/-0.1pF, 250V, 0805, ATC600F
3
C3, C4, C5, C6
CAP, 2.2pF, +/-0.1pF, 250V, 0805, ATC600F
4
C17, C18
CAP, 2.4pF, +/-0.1pF, 250V, 0805, ATC600F
2
C19, C20
CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC600F
2
C31, C32
CAP, 2.7pF, +/-0.1pF, 250V, 0805, ATC600F
2
C22, C33
CAP, 1.5pF, +/-0.1pF, 250V, 0805, ATC600F
2
C11, C24
CAP, 47 PF +/- 5%, 250V, 0805, ATC600F
2
C12, C25
CAP, 100 PF +/- 5%, 250V, 0805, ATC 600F
2
C13, C26
CAP,33000PF, 0805,100V, X7R
2
C14
CAP 10UF 16V TANTALUM
1
C27
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C28
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
1
J1, J2
CONN, SMA, PANEL MOUNT JACK, FL
2
J3
HEADER RT>PLZ .1CEN LK 9POS
1
J4
CONNECTOR ; SMB, Straight, JACK,SMD
1
W1
CABLE ,18 AWG, 4.2
1
PCB, RO4350B, 0.020” THK, CGHV14500-TB1
1
BASEPLATE, AL, 4.00 X 2.50 X 0.49, ALTERNATE HOLE PATTERN
1
CGHV14500F-AMP2 Demonstration Amplifier Circuit
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
15
CGHV14500-AMP2 Demonstration Amplifier Circuit Outline
CGHV14500-AMP2 Demonstration Amplifier Circuit Schematic
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
16
Source and Load Impedances
D
Z Source
Z Load
G
Frequency
Z Source
Z Load
900
0.3 - j0.3
2.1 + j1.4
1000
0.3 - j0.4
2.0 + j0.7
1100
0.6 - j0.4
1.8 + j0.9
1200
0.8 - j0.7
1.5 + j0.9
1300
1.1 - j0.7
1.3 + j0.7
1400
1.2 - j0.1
1.2 + j0.5
1500
1.8 - j0.1
1.1 + j0.4
S
Note 1. VDD = 50 V, IDQ = 500 mA in the 440117 package.
Note 2. Optimized for power gain, PSAT and Drain Efficiency
Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability.
CGHV14500 Power Dissipation De-rating Curve
CGHV14500 Transient Power Dissipation De-Rating Curve
400
300
Power Dissipation (W)
Power Dissipation (W)
350
250
Note 1
200
150
Flange - 500 us 10 %
100
Pill - 500 us 10 %
50
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2)
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
17
Product Dimensions CGHV14500F (Package Type — 440117)
Product Dimensions CGHV14500P (Package Type — 440133)
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
18
Part Number System
CGHV14500F
Type
Power Output (W)
Upper Frequency (GHz)
GaN High Voltage
Table 1
1
Parameter
Value
Units
Upper Frequency1
1.4
GHz
Power Output
500
W
Type
F = Flanged
P = Package
–
Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value.
Table 2
Rev 4.2 – March 2020
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H - 27.0 GHz
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
19
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV14500F
GaN HEMT
Each
CGHV14500P
GaN HEMT
Each
CGHV14500F-AMP
Test board with GaN HEMT installed
Each
Rev 4.2 – March 2020
Image
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV14500F
20
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@cree.com
Notes
Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in
large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would
reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license
is granted by implication or otherwise under any patent or patent rights of Cree.
© 2014-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
Rev 4.2 – March 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com