CGHV14500F

CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description Package Types: 440117, 440133 PNs: CGHV14500F, CGHV14500P Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Typical Performance Over 1.2 - 1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 545 540 530 530 530 W Gain 16.4 16.3 16.2 16.2 16.2 dB Drain Efficiency 69 69 68 66 65 % Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm. Features • • • • Reference design amplifier 1.2 - 1.4 GHz Operation FET tuning range UHF through 1800 MHz 500 W Typical Output Power 16 dB Power Gain • • • 68% Typical Drain Efficiency PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350B, 0.020’ MIL THK, CGHV14500, 1.2-1.4GHZ 1 CGHV14500F 1 Q1 CGHV14500F-AMP Demonstration Amplifier Circuit Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 11 CGHV14500-AMP Demonstration Amplifier Circuit Outline CGHV14500-AMP Demonstration Amplifier Circuit Schematic Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 12 Typical Performance Over 0.96 GHz - 1.3 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 0.96 GHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz Units Output Power 800 805 675 625 585 W Gain 18 18.1 17.3 17.0 16.7 dB Drain Efficiency 70 75 74 77 64 % Note: Measured in the CGHV14500-AMP2 amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm. Typical Performance - CGHV14500-AMP2 CGHV14500-AMP2 Typical Sparameters CGHV14500-AMP2 Typical Sparameters VDDVdd = 50=V,50IDQV,=Idq 500=mA 500 mA 20 15 Magnitude (dB) Magnitude (dB) 10 5 S11 S21 S22 0 -5 -10 800 900 1000 1100 1200 Frequency (MHz) 1300 1400 1500 Frequency (MHz) Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 13 Typical Performance - CGHV14500-AMP2 Figure 2.CGHV14500-AMP2 - CGHV14500-AMP2 Sparameters RF Typical Performance VDD 41 dBm, dBm,Pulse PulseWidth Width==500 500us, μs,Duty Duty Cycle Vdd==50 50V,V,IDQ Idq==500 500 mA, mA, PIN Pin == 41 Cycle = 10% 10 % 1100 Output Power Gain 1000 90 80 70 800 60 700 50 600 40 500 30 400 20 300 10 200 900 950 1000 1050 1100 1150 Frequency (MHz) 1200 1250 1300 Gain (dB) & Drain Efficiency (%) 900 Gain (dB) & Drain Efficiency (%) Output Power (W) Output Power (W) Drain Efficiency 0 1350 Frequency (MHz) Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 14 CGHV14500F-AMP2 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES,1/16W,0603,1%,562 OHMS 1 R2 RES, 5.1,OHM, +/- 1%, 1/16W,0603 1 R3 RES,1/16W,0603,1%,4.99K OHMS 1 C1, C7, C8, C23 CAP, 10pF, +/-0.1pF, 250V, 0805, ATC600F 4 C2, C15, C16 CAP, 5.6pF, +/-0.1pF, 250V, 0805, ATC600F 3 C3, C4, C5, C6 CAP, 2.2pF, +/-0.1pF, 250V, 0805, ATC600F 4 C17, C18 CAP, 2.4pF, +/-0.1pF, 250V, 0805, ATC600F 2 C19, C20 CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC600F 2 C31, C32 CAP, 2.7pF, +/-0.1pF, 250V, 0805, ATC600F 2 C22, C33 CAP, 1.5pF, +/-0.1pF, 250V, 0805, ATC600F 2 C11, C24 CAP, 47 PF +/- 5%, 250V, 0805, ATC600F 2 C12, C25 CAP, 100 PF +/- 5%, 250V, 0805, ATC 600F 2 C13, C26 CAP,33000PF, 0805,100V, X7R 2 C14 CAP 10UF 16V TANTALUM 1 C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 J1, J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350B, 0.020” THK, CGHV14500-TB1 1 BASEPLATE, AL, 4.00 X 2.50 X 0.49, ALTERNATE HOLE PATTERN 1 CGHV14500F-AMP2 Demonstration Amplifier Circuit Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 15 CGHV14500-AMP2 Demonstration Amplifier Circuit Outline CGHV14500-AMP2 Demonstration Amplifier Circuit Schematic Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 16 Source and Load Impedances D Z Source Z Load G Frequency Z Source Z Load 900 0.3 - j0.3 2.1 + j1.4 1000 0.3 - j0.4 2.0 + j0.7 1100 0.6 - j0.4 1.8 + j0.9 1200 0.8 - j0.7 1.5 + j0.9 1300 1.1 - j0.7 1.3 + j0.7 1400 1.2 - j0.1 1.2 + j0.5 1500 1.8 - j0.1 1.1 + j0.4 S Note 1. VDD = 50 V, IDQ = 500 mA in the 440117 package. Note 2. Optimized for power gain, PSAT and Drain Efficiency Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGHV14500 Power Dissipation De-rating Curve CGHV14500 Transient Power Dissipation De-Rating Curve 400 300 Power Dissipation (W) Power Dissipation (W) 350 250 Note 1 200 150 Flange - 500 us 10 % 100 Pill - 500 us 10 % 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2) Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 17 Product Dimensions CGHV14500F (Package Type ­— 440117) Product Dimensions CGHV14500P (Package Type ­— 440133) Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 18 Part Number System CGHV14500F Type Power Output (W) Upper Frequency (GHz) GaN High Voltage Table 1 1 Parameter Value Units Upper Frequency1 1.4 GHz Power Output 500 W Type F = Flanged P = Package – Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2 Rev 4.2 – March 2020 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H - 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 19 Product Ordering Information Order Number Description Unit of Measure CGHV14500F GaN HEMT Each CGHV14500P GaN HEMT Each CGHV14500F-AMP Test board with GaN HEMT installed Each Rev 4.2 – March 2020 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV14500F 20 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@cree.com Notes Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2014-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 4.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com