CGHV60170D-GP4

CGHV60170D 170 W, 6.0 GHz, 50V GaN HEMT Die Description Cree’s CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. PN: CGHV60170D Features Applications • • • • • • • • • • • • 18 dB Typical Small Signal Gain at 4 GHz 17 dB Typical Small Signal Gain at 6 GHz 65% Typical Power Added Efficiency 170 W Typical PSAT 50 V Operation High Breakdown Voltage Up to 6 GHz Operation Broadband amplifiers Tactical communications Satellite communications Industrial, Scientific, and Medical amplifiers Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms Packaging Information • • Bare die are shipped in Gel-Pak® containers Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain source Voltage VDSS 150 VDC 25˚C Gate source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Drain Current IDMAX 12.6 A 25˚C IMAX 20.8 mA 25˚C Thermal Resistance, Junction to Case (packaged) RθJC 1.36 ˚C/W 85˚C, 83.2W Dissipation Thermal Resistance, Junction to Case (die only) RθJC 0.83 ˚C/W 85˚C, 83.2W Dissipation Mounting Temperature TS 320 ˚C 30 seconds 1 Maximum Forward Gate Current 2 Notes: 1 Current limit for long term, reliable operation 2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier. Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Pinch-Off Voltage VP -3.8 -3.0 -2.3 V VDS = 10 V, ID = 20.8 mA Drain Current1 IDSS 16.8 20.8 – A VDS = 6 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 125 – – V VGS = -8 V, ID = 20.8 mA On Resistance RON – 0.14 – Ω VDS = 0.1 V Gate Forward Voltage VG-ON – 1.9 – V IGS = 20.8 mA GSS – 17 – dB VDD = 50 V, IDQ = 260 mA Saturated Power Output PSAT – 170 – W VDD = 50 V, IDQ = 260 mA Drain Efficiency4 η – 65 – % VDD = 50 V, IDQ = 260 mA,= PSAT = 170 W Intermodulation Distortion IM3 – -30 – dBc VDD = 50 V, IDQ = 260 mA, POUT = 170 W PEP Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 260 mA, POUT = 170 W CW Input Capacitance CGS – 28.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 6.35 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.6 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz DC Characteristics RF Characteristics Small Signal Gain 2,3 Dynamic Characteristics Notes: 1 Scaled from PCM data 2 PSAT is defined as IG = 2.0 mA 3 Pulsed 100 μsec, 10% 4 Drain Efficiency = POUT / PDC Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 3 DIE Dimensions (units in microns) Overall die size 820 x 5400 (+0/-50) microns, die thickness 100 microns. All Gate and Drain pads must be wire bonded for electrical connection. Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at www.cree.com/rf/document-library • • • • • • Vacuum collet is the preferred method of pick-up The backside of the die is the Source (ground) contact Die back side gold plating is 5 microns thick minimum Thermosonic ball or wedge bonding are the preferred connection methods Gold wire must be used for connections Use the die label (XX-YY) for correct orientation Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 4 Typical Performance Figure 1. CGHV60170D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25°C VDD = 50 V, IDQ = 260 mA, Frequency = 2.7 GHz Gain (dB) Power (dBm) and Eff (%) CW Transfer Power (dBm) Figure 2. CGHV60170D GMAX and K Factor vs. Frequency at Tcase = 25°C VDD = 50 V, IDQ = 260 mA K-Factor Gmax (dB) Gmax & K-Factor Frequency (MHz) Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 5 Typical Die S-Parameters (Small Signal, VDS = 50 V, IDQ = 260 mA, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.5 0.943 -168.72 9.039 75.28 0.009 -13.64 0.544 -156.15 0.6 0.946 -170.27 7.375 70.86 0.009 -17.83 0.571 -155.58 0.7 0.948 -171.36 6.170 66.84 0.009 -21.63 0.600 -155.23 0.8 0.951 -172.18 5.255 63.13 0.009 -25.12 0.627 -155.11 0.9 0.953 -172.81 4.538 59.69 0.008 -28.34 0.654 -155.19 1 0.956 -173.33 3.961 56.48 0.008 -31.32 0.680 -155.45 1.1 0.959 -173.76 3.488 53.50 0.008 -34.08 0.704 -155.84 1.2 0.961 -174.13 3.095 50.72 0.008 -36.64 0.726 -156.32 1.3 0.963 -174.45 2.764 48.12 0.007 -39.02 0.747 -156.87 1.4 0.966 -174.73 2.482 45.69 0.007 -41.22 0.766 -157.45 1.5 0.968 -174.99 2.239 43.42 0.007 -43.27 0.783 -158.07 1.6 0.970 -175.23 2.030 41.30 0.007 -45.17 0.799 -158.69 1.7 0.971 -175.44 1.848 39.31 0.006 -46.94 0.814 -159.31 1.8 0.973 -175.64 1.688 37.44 0.006 -48.59 0.827 -159.93 1.9 0.974 -175.83 1.548 35.68 0.006 -50.12 0.839 -160.53 2 0.976 -176.00 1.424 34.02 0.006 -51.55 0.850 -161.11 2.1 0.977 -176.17 1.314 32.47 0.005 -52.88 0.860 -161.68 2.2 0.978 -176.32 1.216 31.00 0.005 -54.13 0.869 -162.23 2.3 0.979 -176.46 1.128 29.60 0.005 -55.30 0.877 -162.76 2.4 0.980 -176.60 1.049 28.29 0.005 -56.39 0.885 -163.27 2.5 0.981 -176.73 0.977 27.04 0.005 -57.41 0.892 -163.75 2.6 0.982 -176.85 0.913 25.85 0.005 -58.37 0.898 -164.22 2.7 0.983 -176.97 0.855 24.72 0.004 -59.27 0.904 -164.67 2.8 0.984 -177.08 0.802 23.65 0.004 -60.11 0.909 -165.09 2.9 0.984 -177.18 0.753 22.63 0.004 -60.91 0.914 -165.50 3 0.985 -177.29 0.709 21.65 0.004 -61.66 0.919 -165.90 3.2 0.986 -177.47 0.631 19.82 0.004 -63.03 0.927 -166.63 3.4 0.987 -177.65 0.566 18.13 0.004 -64.25 0.934 -167.31 3.6 0.988 -177.81 0.510 16.57 0.003 -65.34 0.940 -167.93 3.8 0.989 -177.95 0.462 15.12 0.003 -66.31 0.945 -168.50 4 0.989 -178.09 0.420 13.78 0.003 -67.19 0.950 -169.02 4.2 0.990 -178.22 0.384 12.51 0.003 -67.97 0.954 -169.51 4.4 0.991 -178.34 0.352 11.32 0.003 -68.67 0.958 -169.96 4.6 0.991 -178.45 0.324 10.20 0.003 -69.30 0.961 -170.38 4.8 0.991 -178.56 0.299 9.14 0.002 -69.86 0.964 -170.77 5 0.992 -178.66 0.277 8.13 0.002 -70.36 0.966 -171.14 5.2 0.992 -178.76 0.258 7.18 0.002 -70.81 0.968 -171.48 5.4 0.992 -178.85 0.240 6.26 0.002 -71.20 0.970 -171.80 5.6 0.993 -178.94 0.224 5.38 0.002 -71.55 0.972 -172.10 5.8 0.993 -179.02 0.210 4.54 0.002 -71.85 0.974 -172.38 6 0.993 -179.10 0.197 3.73 0.002 -72.10 0.975 -172.65 To download the s-parameters in s2p format, go to the CGHV60170D Product Page and click on the documentation tab. Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 6 Part Number System CGHV60170D Die Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 6.0 GHz Power Output 170 W Package Bare Die - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2. Rev 1.1 – April 2020 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 7 Product Ordering Information Order Number Description Unit of Measure CGHV60170D GaN HEMT Bare Die Each Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60170D 8 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@cree.com Notes Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2014-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com