C4D05120E

C4D05120E VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier ® Features • • • • • • IF (TC=135˚C) =  9.5 A Q c 27 nC = 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • • 1200 V Package Benefits • • • • • = Part Number Package Marking C4D05120E TO-252-2 C4D05120 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages LED Lighting Power Supplies AC/DC converters Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V Continuous Forward Current 19 9.5 5 A TC=25˚C TC=135˚C TC=161˚C IFRM Repetitive Peak Forward Surge Current 26 18 A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse IFSM Non-Repetitive Peak Forward Surge Current 46 36 A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 400 320 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Power Dissipation 100 43 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-960V ∫i2dt i2t value 10.6 6.5 A2s -55 to +175 ˚C IF Ptot TJ , Tstg 1 Value Operating Junction and Storage Temperature C4D05120E Rev. F, 01-2017 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.4 1.9 1.8 3 V IF = 5 A TJ=25°C IF = 5 A TJ=175°C Fig. 1 IR Reverse Current 20 40 150 300 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 27 nC VR = 800 V, IF = 5A di/dt = 200 A/μs TJ = 25°C Fig. 5 C Total Capacitance 390 27 20 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 8.0 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.5 °C/W Fig. 9 Typical Performance 10 1000 9 TJ=-55°C TJ= 25°C TJ= 75°C T =125°C 8 900 800 TJ =175°C J 7 Current (µA) I (μA) 700 5 4 500 TJ=-55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 400 3 300 2 200 1 100 0 0 0 0.5 1 1.5 2 2.5 3 3.5 VF (V) Figure 1. Forward Characteristics 2 600 R IF (A) 6 C4D05120E Rev. F, 01-2017 4 4.5 0 500 1000 1500 VR (V) Voltage (V) Figure 2. Reverse Characteristics 2000 Typical Performance 65 110 60 100 55 IF(peak) (A) 45 40 90 Duty Duty Duty Duty Duty 80 70 PTot (W) 10% 20% 30% 50% 70% DC 50 35 30 25 60 50 40 20 30 15 20 10 10 5 0 25 50 75 100 125 150 0 175 25 50 75 100 TC ˚C 125 150 175 TC ˚C Figure 3. Current Derating Figure 4. Power Derating 450 35 400 30 350 300 20 C (pF) Qc (nC) 25 15 250 200 150 10 100 5 50 0 0.01 0 0 200 400 600 800 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D05120E Rev. F, 01-2017 0.1 1 10 VR (V) 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 14 14.0 1000 1000 10.0 10 8.08 (A) IFSMIFSM (A) E (mJ) C EC Capacitive Energy (uJ) 12 12.0 6.06 100 100 TJ_intitial = 25°C T = 110°C J_initial 4.04 2.02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 100 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 VR Reverse Voltage (V) V (V) tptp(s) (s) R Figure 7. Typical Capacitance Stored Energy Thermal Resistance (˚C/W) 1 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-6 10E-6 100E-6 1E-3 10E-3 T (Sec) Figure 9. Transient Thermal Impedance 4 C4D05120E Rev. F, 01-2017 100E-3 1 Package Dimensions SYMBOL Package TO-252-2 A A1 b b2 b3 c c2 D D1 E E1 e H L L2 L3 L4 θ MILLIMETERS MIN MAX 2.159 2.413 0 0.13 0.64 0.89 0.653 1.143 5.004 5.6 0.457 0.61 0.457 0.864 5.867 6.248 5.21 6.35 7.341 4.32 4.58 BSC 9.65 10.414 1.106 1.78 0.51 BSC 0.889 1.27 0.64 1.01 0° 8° Tjb June 2015 MX+DI+PSI Recommended Solder Pad Layout Part Number Package Marking C4D05120E TO-252-2 C4D05120 TO-252-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D05120E Rev. F, 01-2017 Diode Model VfT = VT + If * RT VT = 0.96 + (Tj * -1.22*10-3) RT = 0.08 + (Tj * 8.5*10-4) Note: Junctiontemperature Temperature Degrees Celsius, Note: TTJj = is Diode diode junction in in degrees Celsius valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D05120E Rev. F, 01-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power