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PTVA123501FC-V1-R0

PTVA123501FC-V1-R0

  • 厂商:

    WOLFSPEED

  • 封装:

    H-37248-4

  • 描述:

    IC AMP RF LDMOS H-37248-2

  • 数据手册
  • 价格&库存
PTVA123501FC-V1-R0 数据手册
PTVA123501EC/FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermallyenhanced package with slotted and earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle 60 50 60 45 50 40 40 1200 MHz 1300 MHz 35 30 1400 MHz Efficiency a123501ec_g1-1 30 32 34 • Broadband internal input and output matching 70 Output Power Drain Efficiency (%) POUT (dBm) 55 30 Features 80 36 38 40 42 20 PIN (dBm) • High gain and efficiency • Integrated ESD protection • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) • Low thermal resistance • Excellent ruggedness • Pb-free and RoHS compliant • Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm under pulsed conditions: 300 µs pulse width, 12% duty cycle, VDD = 50 V RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 0.15 A, POUT = 350 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency hD 54 55 — % Return Loss IRL — –12 –9 dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Rev. 06, 2018-06-19 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 2 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 150 mA, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test Mode of Operation ƒ (MHz) IRL (dB) P1dB Gain (dB) Eff (%) P3dB POUT (W) Gain (dB) Eff (%) POUT (W) Max Pdroop (pulse) dB @ 350 W tr (ns) @ 350 W tf (ns) @ 350 W Pulsed RF 1200 –14 16.2 59 375 14.2 59 415 0.10 4 5< Pulsed RF 1300 –14 16.0 59 390 14.0 59 435 0.15 4 5< Pulsed RF 1400 –12 15.8 56 375 13.8 57 415 0.15 4 5< Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 150 mA, 30 ms pulse width, 30% duty cycle, class AB test Mode of Operation ƒ (MHz) Pulsed RF 1200 P3dB P1dB Gain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pdroop (pulse) dB @ 300 W 16 47 316 14 48 350 0.23 Pulsed RF 1300 16 47 324 14 48 355 0.25 Pulsed RF 1400 15.5 45 315 13.5 47 355 0.29 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RqJC 0.34 Rev. 06, 2018-06-19 °C/W 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 PTVA123501EC/FC Ordering Information Type and Version Order Code Package Description Shipping PTVA123501EC V2 R0 PTVA123501EC-V2-R0 H-36248-2, bolt-down Tape & Reel, 50 pcs PTVA123501EC V2 R250 PTVA123501EC-V2-R250 H-36248-2, bolt-down Tape & Reel, 250 pcs PTVA123501FC V1 R0 PTVA123501FC-V1-R0 H-37248-2, earless Tape & Reel, 50 pcs PTVA123501FC V1 R250 PTVA123501FC-V1-R250 H-37248-2, earless Tape & Reel, 250 pcs See next page for Typical RF Performance Rev. 06, 2018-06-19 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 4 Typical RF Performance (data taken in production test fixture) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle Output Power 18 70 17 50 60 45 50 40 1300 MHz 35 34 14 30 13 20 12 1200 MHz 1300 MHz 1400 MHz a123501ec_g1-1 32 15 1400 MHz Efficiency 30 Gain 16 36 38 40 42 a123501ec_g1-2 30 32 34 18 16 60 Efficiency 55 50 1450 a123501ec_g1-3 1300 1350 1400 Frequency (MHz) Power Droop (dB) 65 Drain Efficiency (%) Gain (dB) 17 Rev. 06, 2018-06-19 0.2 -12 Power Droop Gain 1250 42 IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 300 µs pulse width, 12% duty cycle 70 1200 40 Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 300 µs pulse width, 12% duty cycle 14 1150 38 PIN (dBm) PIN (dBm) 15 36 0.15 -14 0.1 -16 IRL 0.05 0 1100 IRL (dB) 30 40 1200 MHz Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 -18 1200 1300 1400 -20 1500 a123501ec_g1-4 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 5 PTVA123501EC/FC Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA,VDD = 50 V, TCASE = 25°C, 2 ms pulse width, 10% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 2 ms pulse width, 10% duty cycle Output Power 18 70 17 50 60 45 50 1300 MHz 35 Efficiency 30 40 1200 MHz 30 31 33 35 37 39 41 43 Gain 15 14 1200 MHz 1300 MHz 13 1400 MHz 1400 MHz a123501ec_g2-1 16 12 20 a123501ec_g2-2 31 33 35 Efficiency 55 1300 1350 Frequency (MHz) Rev. 06, 2018-06-19 50 1450 a123501ec_g2-3 1250 1400 Power Droop (dB) 60 16 Drain Efficiency (%) Gain (dB) 65 Gain 1200 43 IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 2 ms pulse width, 10% duty cycle 70 18 14 1150 41 Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 2 ms pulse width, 10% duty cycle 15 39 PIN (dBm) PIN (dBm) 17 37 0.3 -10 0.25 -12 Power Droop 0.2 0.15 -14 -16 IRL (dB) 40 Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 IRL 0.1 -18 0.05 1100 -20 1500 a123501ec_g2-4 1200 1300 1400 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 6 Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 20% duty cycle IDQ = 150 mA,VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 20% duty cycle Output Power 18 70 17 50 60 45 50 40 40 1200 MHz 30 30 1300 MHz Efficiency 33 35 37 39 41 15 14 1200 MHz 1300 MHz 13 1400 MHz 1400 MHz a123501ec_g3-1 31 Gain 43 12 20 a123501ec_g3-2 31 33 35 PIN (dBm) 39 41 43 PIN (dBm) Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 20% duty cycle IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 20% duty cycle 70 17 65 Gain 60 16 55 15 -6 0.35 Power Droop (dB) 18 Drain Efficiency (%) Gain (dB) 37 -8 0.3 Power Droop 0.25 -10 0.2 -12 IRL (dB) 35 16 Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 IRL -14 0.15 Efficiency 14 1150 1250 1300 1350 Frequency (MHz) Rev. 06, 2018-06-19 50 1450 a123501ec_g3-3 1200 1400 0.1 1100 -16 1500 a123501ec_g3-4 1200 1300 1400 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 7 PTVA123501EC/FC Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 50% duty cycle IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 50% duty cycle Output Power 18 70 17 50 60 45 50 40 40 1200 MHz 30 30 1300 MHz Efficiency 1400 MHz a123501ec_g4-1 31 33 35 37 39 41 43 16 Gain 15 14 1200 MHz 1300 MHz 13 12 20 1400 MHz a123501ec_g4-2 31 33 35 70 0.4 65 0.3 Gain 60 14 55 13 Efficiency 50 1500 a123501ec_g4-3 1300 Frequency (MHz) 1400 Power Droop (dB) 15 Gain (dB) 43 IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 50% duty cycle Drain Efficiency (%) 16 Rev. 06, 2018-06-19 41 Pulsed RF Performance Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 50% duty cycle 1200 39 PIN (dBm) PIN (dBm) 12 1100 37 -2 -4 Power Droop 0.2 -6 0.1 -8 0 1100 IRL IRL (dB) 35 Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 -10 1500 a123501ec_g4-4 1200 1300 1400 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 8 Typical RF Performance (cont.) Power Sweep, Pulsed RF Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 22 ms pulse width, 50% duty cycle Output Power 18 70 17 50 60 45 50 40 1300 MHz 35 Efficiency 31 33 35 37 39 41 43 14 13 20 12 35 37 39 41 43 0.4 65 15 60 14 55 Power Droop (dB) Gain Drain Efficiency (%) Gain (dB) 33 IDQ = 150 mA, VDD = 50 V, POUT = 330 W, 22 ms pulse width, 50% duty cycle 70 17 -6 -8 0.3 Power Droop -10 0.2 -12 0.1 -14 Efficiency 50 1500 a123501ec_g5-3 1200 1300 1400 Frequency (MHz) Rev. 06, 2018-06-19 a123501ec_g5-2 31 Pulsed RF Performance Pulsed RF Performance 12 1100 1300 MHz PIN (dBm) IDQ = 150 mA, VDD = 50 V, POUT = 330 W, 22 ms pulse width, 50% duty cycle 13 1200 MHz 1400 MHz PIN (dBm) 16 Gain 15 30 1400 MHz a123501ec_g5-1 16 IRL (dB) 30 40 1200 MHz Gain (dB) POUT (dBm) 55 80 Drain Efficiency (%) 60 IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 22 ms pulse width, 50% duty cycle 0 1100 IRL 1200 1300 1400 -16 1500 a123501ec_5-4 Frequency (MHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 9 PTVA123501EC/FC Broadband Circuit Impedance Freq [MHz] Z Source W R D Z Load W jX R Z Source jX 1200 1.25 –1.99 1.96 –2.23 1300 1.54 –1.52 1.59 –2.03 1400 1.66 –1.58 1.26 –1.75 Z Load G S Load Pull Performance Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 1200 1.91 – j2.04 41.40 56.40 436.52 15 53.80 1.30 – j2.03 1300 2.72 – j3.13 42.24 56.54 450.82 14.30 54.48 1.25 – j1.94 1400 4.83 – j1.46 41.66 56.31 427.56 14.65 53.27 1.03 – j1.94 Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 1200 1.91 – j2.04 38.10 54.72 296.48 16.62 57.89 3.03 – j3.11 1300 2.72 – j3.13 38.84 54.83 304.09 15.99 62.54 3.22 – j1.63 1400 4.83 – j1.46 37.21 53.42 219.79 16.21 57.25 2.30 – j0.09 Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 1200 1.91 – j2.04 39.60 55.80 380.19 16.20 60.71 2.22 – j2.43 1300 2.72 – j3.13 39.44 55.23 333.43 15.79 63.71 2.81 – j1.90 1400 4.83 – j1.46 39.39 55.19 330.37 15.80 62.26 2.40 – j1.45 Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] 1200 1.91 – j2.04 39.18 55.58 361.41 16.4 60.5 2.41 – j2.50 1300 2.72 – j3.13 39.50 55.30 338.84 15.8 62.6 2.73 – j1.51 1400 4.83 – j1.46 40 55.60 363.08 15.6 60.7 1.86 – j1.37 Rev. 06, 2018-06-19 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 10 Reference Circuit C201 C803 C801 R803 C802 R804 RO6006, .025 (62) C206 C208 + S3 S2 R802 S1 R801 VDD R202 C101 R101 C104 R102 C103 C207 C211 R103 C203 C202 C102 RF_IN RF_OUT C205 C105 C106 C204 VDD R201 C209 PTVA123501EC_IN RO6006, .025 (62) C210 PTVA123501EC_OUT pt v a12 350 1ec _ C D_ 06 - 19 - 20 18 Reference circuit assembly diagram (not to scale)* Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Rev. 06, 2018-06-19 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 11 PTVA123501EC/FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA123501EC or PTVA123501FC Test Fixture Part No. LTN/PTVA123501EC V2 or LTN/PTVA123501FC V1 PCB Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, εr = 6.15 Components Information Component Description Suggested Manufacturer P/N C101 Capacitor, 1 μF TDK Corporation C4532X7R2A105M230KA C102, C103 Capacitor, 39 pF ATC ATC100B390KW500XB C104 Capacitor, 10 μF TDK Corporation C5750X5R1H106K230KA C105 Capacitor, 3 pF ATC ATC100A3R0CW150XB C106 Capacitor, 0.5 pF ATC ATC100A0R5CW150XB C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101 Resistor, 1000 Ω Panasonic Electronic Components ERJ-8GEYJ102V R102 Resistor, 5600 Ω Panasonic Electronic Components ERJ-8GEYJ562V R103, R804 Resistor, 10 Ω Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 2000 Ω Panasonic Electronic Components ERJ-8GEYJ202V R802 Resistor, 1200 Ω Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 1300 Ω Panasonic Electronic Components ERJ-3GEYJ132V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM7805 S3 Potentiometer, 2k Ω Bourns Inc. 3224W-1-202E C201 Capacitor, 6800 μF Panasonic Electronic Components ECO-S2AP682EA C202 Capacitor, 100 μF Cornell Dubilier Electronics (CDE) SK101M100ST C203 Capacitor, 22 μF Cornell Dubilier Electronics (CDE) SEK220M100ST C204, C205, C207 Capacitor, 39 pF ATC ATC100B390KW500XB C206, C210 Capacitor, 1 μF TDK Corporation C4532X7R2A105M230KA C208, C209 Capacitor, 10 μF TDK Corporation C5750X5R1H106K230KA C211 Capacitor, 10 μF Panasonic Electronic Components EEV-HD1H100P R201, R202 Resistor, 5600 Ω Panasonic Electronic Components ERJ-8GEYJ562V Input Output Rev. 06, 2018-06-19 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 12 Package Outline Specifications Package H-36248-2 45° X 2.720 [45° X .107] CL 4.826±0.510 [.190±0.020] D S FLANGE 9.779 [.385] LID 9.398 +0.100 –0.150 19.431 ±0.510 [.370+0.004 –0.006 ] [.765±0.020] CL 2X R1.626 [R.064] G 4X R1.524 [R.060] 2X 12.700 [.500] 27.940 [1.100] 19.812±0.200 [.780±0.008] 1.016 [.040] SPH 1.575 [0.062] C L 3.632±0.380 [.143±0.015] H-36248-2_po_01.1_03-29-2013 34.036 [1.340] Rev. 06, 2018-06-19 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 13 PTVA123501EC/FC Package Outline Specifications (cont.) Package H-37248-2 45° X 2.720 [45° X .107] CL 4.826±0.510 [.190±0.020] +.381 -.127 +0.015 [ R.020 -0.005 ] 4X R0.508 D +0.100 -0.150 +0.004 [ .370 -0.006 ] LID 9.398 FLANGE 9.779 [.385] 19.431±0.510 [.765±0.020] CL G 2X 12.700 [.500] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 1.016 [.040] H-37248-2_po_10-04-2012 3.632±0.380 [.143±0.015] S Rev. 06, 2018-06-19 CL 20.574 [.810] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA123501EC/FC 14 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-05 Preliminary All Data Sheet reflects preliminary specification 02 2013-03-06 Production All Data Sheet reflects released product specification 03 2013-07-11 Production All 1, 9, 12 Updated to include FC version Revised Pulsed RF performance table, Minor cosmetic changes only, Added package outline 04 2014-04-29 Production All, 1 Revised product from V1 to V2, Revised target RF Charateristics table 04.1 2014-06-26 Production All 3 Corrected FC version to V1 throughout Corrected package to H-36248-2 and H-37248-2 in ordering table 05 2015-07-07 Production 8 Added typical performance at 22ms, 50% pulse 05.1 2016-04-26 Production 1, 3 Added ESD rating, updated ordering information 05.2 2016-02-07 Production 2 Updated operating voltage and junction temperature 06 2018-06-19 Production All Converted to Wolfspeed Data Sheet For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 06, 2018-06-19 www.wolfspeed.com
PTVA123501FC-V1-R0 价格&库存

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