ES1LD M2G

ES1LD – ES1LJ Taiwan Semiconductor 1A, 200V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Super fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer, and telecommunication. PARAMETER VALUE UNIT IF 1 A VRRM 200 - 600 V IFSM 30 A TJ MAX 150 °C Package DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device ES1LD ES1LG ES1LJ ES1LD ES1LG ES1LJ UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: B2102 ES1LD – ES1LJ Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 35 °C/W Junction-to-ambient thermal resistance RӨJA 80 °C/W Junction-to-case thermal resistance RӨJC 25 °C/W Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL ES1LD Forward voltage (1) ES1LG IF = 1A, TJ = 25°C VF ES1LJ Reverse current @ rated VR TJ = 25°C (2) IR TJ = 125°C ES1LD Junction capacitance ES1LG 1MHz, VR = 4.0V CJ IF = 0.5A, IR = 1.0A, Irr = 0.25A trr ES1LJ Reverse recovery time TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 5 µA - 100 µA 16 - pF 18 - pF - 35 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES1Lx DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 200V(ES1LD) to 600V(ES1LJ) 2 Version: B2102 ES1LD – ES1LJ Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 1.5 1 0.5 ES1LG - ES1LJ 10 0 ES1LD f=1.0MHz Vsig=50mVp-p 1 30 60 90 120 150 0.1 1 10 REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics ES1LD TJ=125°C 0.1 TJ=25°C 0.01 20 30 40 50 60 70 80 90 100 10 10 ES1LD TJ=125°C TJ=125°C 1 TJ=25°C 0.1 TJ=25°C 0.01 0.6 Pulse width Pulse width 300μs 1% duty cycle 0.7 0.8 0.9 1 1.1 0.7 0.8 0.001 0.3 0.1 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW 1 (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) 1 10 100 0.4 0.4 0.5 0.5 0.6 0.9 1.0 1.1 1.2 FORWARD VOLTAGE (V) 3 Version: B2102 1.2 ES1LD – ES1LJ Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Forward Characteristics ES1LG 1 TJ=125°C 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 10 10 1 ES1LG UF1DLW TJ=125°C TJ=125°C TJ=25°C 0.01 0.10.001 0.4 0.3 0.5 0.4 0.6 ES1LJ 1 TJ=125°C TJ=25°C 0.01 30 40 50 60 70 80 90 0.6 0.8 0.7 0.9 0.8 1 0.9 1.1 1 1.2 1.1 1.3 1.2 Pulse width Pulse width 300μs 1% duty cycle 0.7 0.8 0.9 1 1.1 1.2 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 ES1LJ UF1DLW 1 TJ=125°C TJ=125°C 1 TJ=25°C 0.1 (A) 10 20 0.5 0.7 Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.7 Typical Reverse Characteristics 10 Pulse width 300μs Pulse width 1% duty cycle FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.1 TJ=25°C 1 0.1 (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.5 Typical Reverse Characteristics TJ=25°C 0.01 0.001 0.3 0.1 0.4 0.4 0.6 0.5 0.8 0.6 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 4 Version: B2102 ES1LD – ES1LJ Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: B2102 ES1LD – ES1LJ Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B2102