TSM9926DCS RLG

TSM9926D Taiwan Semiconductor Dual N-Channel Power MOSFET 20V, 6.0A, 30mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On- PARAMETER VALUE UNIT VDS 20 V resistance RDS(on) (max) VGS = 4.5V 30 VGS = 2.5V 40 mΩ APPLICATION ● Specially Designed for Li-on Battery Packs ● Battery Switch Application 4.86 nC en de d Qg mm SOP-8 eco Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER tR Drain-Source Voltage Gate-Source Voltage Continuous Drain Current LIMIT UNIT VDS 20 V VGS ±12 V ID 6 A IDM 30 A IS 1.7 A TC = 25°C (Note 2) No Pulsed Drain Current (Note 1) SYMBOL Continuous Source Current (Diode Conduction) Total Power Dissipation TA = 25°C TA = 75°C Operating Junction and Storage Temperature Range PDTOT 1.6 1.1 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 40 °C/W Junction to Ambient Thermal Resistance RӨJA 77 °C/W THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000156 1 Version: B15 TSM9926D Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) VGS = 0V, ID = 250µA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 0.6 -- -- V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1 µA On-State Drain Current VDS = 5V, VGS = 4.5V ID(ON) 30 -- -- A -- 21 30 -- 30 40 Forward Transconductance VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A (Note 4) Total Gate Charge VDS = 10V, ID = 6A, Gate-Source Charge VGS = 4.5V Gate-Drain Charge VDS = 8V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching F = 1.0MHz (Note 5) Turn-Off Delay Time Turn-Off Fall Time VDD = 10V, RGEN = 6Ω, ID = 1A, VGS = 4.5V, Forward Voltage Notes: -- Qg -- 4.86 -- Qgs -- 0.92 -- Qgd -- 1.4 -- Ciss -- 562 -- Coss -- 106 -- S nC pF 75 td(on) -- 8.1 -- tr -- 9.95 -- td(off) -- 21.85 -- tf -- 5.35 -- VSD -- 0.7 1.2 ns IS = 1.7A, VGS = 0V V Pulse width limited by the Maximum junction temperature. No 1. 30 mΩ (Note 3) tR Source-Drain Diode -- Crss e co Turn-On Delay Time Turn-On Rise Time gfs mm Input Capacitance RDS(ON) en Dynamic VGS = 4.5V, ID = 6.0A de Drain-Source On-State Resistance d Drain-Source Breakdown Voltage 2. Surface Mounted on FR4 Board, t ≤ 5 sec. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS_P0000156 2 Version: B15 TSM9926D Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM9926DCS RLG PACKAGE PACKING SOP-8 2,500pcs / 13” Reel No tR e co mm en de d Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000156 3 Version: B15 TSM9926D Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Transfer Characteristics en de d Output Characteristics Gate Charge No tR e co mm On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature Document Number: DS_P0000156 Source-Drain Diode Forward Voltage 4 Version: B15 TSM9926D Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) On-Resistance vs. Gate-Source Voltage en de d Threshold Voltage tR e co mm Single Pulse Power No Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000156 5 Version: B15 TSM9926D Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) tR e co mm SUGGESTED PAD LAYOUT (Unit: Millimeters) en de d SOP-8 MARKING DIAGRAM No Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000156 6 Version: B15 TSM9926D No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000156 7 Version: B15