C3M0065090J

C3M0065090J VDS ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 900 V 35 A 65 mΩ N-Channel Enhancement Mode Features • • • • • • • Package TAB Drain New C3M SiC MOSFET technology New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Benefits • • • • Drain (TAB) 1 2 3 4 5 G DS S S S Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency 6 S 7 S Gate (Pin 1) Applications • • • • Driver Source (Pin 2) Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Power Source (Pin 3,4,5,6,7) Part Number Package C3M0065090J TO-263-7 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions 900 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note. 2 VGS = 15 V, TC = 25˚C Fig. 19 ID ID(pulse) Continuous Drain Current 22 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 90 A EAS Avalanche energy, Single pulse 110 mJ ID = 22A, VDD = 50V PD Power Dissipation 113 W TC=25˚C, TJ = 150 ˚C -55 to +150 ˚C 260 ˚C TJ , Tstg TL Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 35 C3M0065090J Rev. D, 06-2019 Pulse width tP limited by Tjmax 1.6mm (0.063”) from case for 10s Fig. 22 Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 65 78 RDS(on) Drain-Source On-State Resistance 90 16 gfs Transconductance Ciss Input Capacitance 760 Coss Output Capacitance 66 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 16 EON Turn-On Switching Energy (Body Diode FWD) 42 EOFF Turn Off Switching Energy (Body Diode FWD) 6 td(on) Turn-On Delay Time 7 Rise Time 8 Turn-Off Delay Time 13 Fall Time 4 tr td(off) tf RG(int) S 13 Internal Gate Resistance pF Gate to Source Charge 9 Qgd Gate to Drain Charge 9 Qg Total Gate Charge 30 VGS = 15 V, ID = 20 A VGS = 15 V, ID = 20A, TJ = 150ºC VDS= 15 V, IDS= 20 A VDS= 15 V, IDS= 20 A, TJ = 150ºC VGS = 0 V, VDS = 600 V f = 1 MHz μJ 3.5 Qgs mΩ VAC = 25 mV Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20 A, RG(ext) = 2.5 Ω, L= 65.7 μH, TJ = 150ºC Fig. 26, 30 Note. 3 ns VDD = 400 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.4 V VGS = -4 V, ISD = 10 A 4.0 V VGS = -4 V, ISD = 10 A, TJ = 150 °C Note Fig. 8, 9, 10 Continuous Diode Forward Current 22 A VGS = -4 V Note 1 Diode pulse Current 90 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 20 A, VR = 500 V dif/dt = 5400 A/µs, TJ = 150 °C Note 1 trr Reverse Recovery time 8 ns Qrr Reverse Recovery Charge 215 nC Irrm Peak Reverse Recovery Current 32 A Thermal Characteristics Symbol Parameter Max. RθJC Thermal Resistance from Junction to Case 1.1 RθJA Thermal Resistance From Junction to Ambient 40 Unit °C/W Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065090J Rev. D, 06-2019 Test Conditions Note Fig. 21 Typical Performance 80 Conditions: TJ = -55 °C tp = < 200 µs 80 VGS = 11V VGS = 13V 60 50 VGS = 9V 40 30 20 VGS = 7V 10 0 0.0 2.0 Conditions: TJ = 25 °C tp = < 200 µs 70 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 70 VGS = 15V 4.0 6.0 8.0 10.0 VGS = 15V 60 50 VGS = 9V 40 30 20 VGS = 7V 10 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) Conditions: TJ = 150 °C tp = < 200 µs 2.0 VGS = 15V 1.6 VGS = 11V VGS = 9V 50 40 30 VGS = 7V 20 10 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 4.0 6.0 8.0 10.0 0.0 12.0 Figure 3. Output Characteristics TJ = 150 ºC -50 -25 0 140 Conditions: VGS = 15 V tp < 200 µs 100 TJ = 150 °C TJ = -55 °C TJ = 25 °C 60 40 20 0 100 VGS = 11 V 80 VGS = 13 V 60 VGS = 15 V 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures C3M0065090J Rev. D, 06-2019 50 75 100 125 150 40 20 0 0 50 Conditions: IDS = 20 A tp < 200 µs 120 80 25 Junction Temperature, TJ (°C) Figure 4. Normalized On-Resistance vs. Temperature On Resistance, RDS On (mOhms) 120 On Resistance, RDS On (mOhms) 12.0 1.4 Drain-Source Voltage, VDS (V) 3 10.0 Conditions: IDS = 20 A VGS = 15 V tp < 200 µs 1.8 VGS = 13V 60 8.0 Figure 2. Output Characteristics TJ = 25 ºC On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 70 6.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC 80 VGS = 11V VGS = 13V 60 -50 -25 0 25 50 75 Junction Temperature, TJ (°C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance -9 Conditions: VDS = 20 V tp < 200 µs 40 TJ = 150 °C 30 TJ = 25 °C TJ = -55 °C 20 10 0 0 2 4 6 -8 -7 -6 8 -6 -5 -4 -3 -2 -1 Drain-Source Current, IDS (A) 0 0 -10 -30 VGS = -2 V -40 -50 -60 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) 3.0 -10 -9 C3M0065090J Rev. D, 06-2019 -6 -5 -4 -3 -2 -1 -80 0 0 -10 VGS = 0 V -20 -30 VGS = -2 V -40 -50 -60 Conditions: TJ = 150°C tp < 200 µs Drain-Source Voltage VDS (V) -70 -80 125 Conditions: IDS = 20 A IGS = 50 mA VDS = 400 V TJ = 25 °C 12 0.5 Figure 11. Threshold Voltage vs. Temperature 4 -7 VGS = -4 V 16 1.0 Junction Temperature TJ (°C) -70 Figure 10. Body Diode Characteristic at 150 ºC 1.5 100 -8 -80 2.0 75 -40 -70 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.5 50 -20 -60 Conditons VGS = VDS IDS = 5 mA 25 -10 Conditions: TJ = -55°C tp < 200 µs Figure 9. Body Diode Characteristic at 25 ºC 0 0 Figure 8. Body Diode Characteristic at -55 ºC -20 -25 0 Drain-Source Voltage VDS (V) VGS = 0 V -50 -1 VGS = 0 V 10 VGS = -4 V 0.0 -2 -50 Drain-Source Current, IDS (A) -7 -3 -30 Figure 7. Transfer Characteristic for Various Junction Temperatures -8 -4 VGS = -2 V Gate-Source Voltage, VGS (V) -9 -5 VGS = -4 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 50 150 8 4 0 -4 0 5 10 15 20 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 25 30 Typical Performance -6 -5 -4 -3 -2 -1 0 -8 0 -10 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V VGS = 15 V -40 -50 -7 -6 -5 -4 -3 -2 -1 0 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 -60 Conditions: TJ = -55 °C tp < 200 µs Drain-Source Voltage VDS (V) -60 Conditions: TJ = 25 °C tp < 200 µs -70 -80 -6 -5 -4 -3 -2 -1 0 Drain-Source Current, IDS (A) 35 0 VGS = 0 V 30 -10 -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 -60 Conditions: TJ = 150 °C tp < 200 µs 25 20 15 10 5 -70 0 -80 Drain-Source Voltage VDS (V) 0 100 Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 Capacitance (pF) Capacitance (pF) Coss 100 1 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0065090J Rev. D, 06-2019 400 500 600 700 Drain to Source Voltage, VDS (V) 800 900 1000 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 Ciss 100 Coss 10 Crss 0 300 10000 Ciss 10 200 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 -80 Figure 14. 3rd Quadrant Characteristic at 25 ºC Stored Energy, EOSS (µJ) -7 -70 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -8 0 -10 Drain-Source Current, IDS (A) -7 Drain-Source Current, IDS (A) -8 200 1 Crss 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance 120 Conditions: TJ ≤ 150 °C 35 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 40 30 25 20 15 10 5 0 -55 -30 -5 20 45 70 Case Temperature, TC (°C) 95 120 Conditions: TJ ≤ 150 °C 100 80 60 40 20 0 145 -55 Figure 19. Continuous Drain Current Derating vs. Case Temperature -30 -5 20 45 70 95 Case Temperature, TC (°C) 120 145 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 0.3 0.1 100E-3 0.05 0.02 1 ms 100 ms 1.00 0.10 0.01 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 Conditions: TC = 25 °C D = 0, Parameter: tp 1 0.1 1 150 70 ETotal EOn 100 50 EOff 0 0 5 10 15 20 25 30 Drain to Source Current, IDS (A) 35 C3M0065090J Rev. D, 06-2019 1000 60 ETotal EOn 50 40 30 20 EOff 10 40 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065090J L = 65.7 μH 80 Switching Loss (µJ) Switching Loss (µJ) 200 100 Figure 22. Safe Operating Area 90 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065090J L = 65.7 μH 10 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 250 100 µs 10.00 SinglePulse 0.01 10E-3 10 µs Limited by RDS On 0.5 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 45 0 0 5 10 15 20 25 30 Drain to Source Current, IDS (A) 35 40 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 45 Typical Performance 180 160 140 Switching Loss (µJ) 100 Conditions: TJ = 25 °C VDD = 400 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0065090J L = 65.7μH Conditions: IDS = 20 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065090J L = 65.7 μH 80 ETotal 120 Switching Loss (µJ) 200 EOn 100 80 60 EOff 40 60 ETotal 40 EOn 20 20 0 EOff 0 5 10 15 20 External Gate Resistor RG(ext) (Ohms) 25 Conditions: Conditions: TJ = 25 °C VDD = 400 V IRDSG(ext) = 20 =A 2.5 Ω VGS -4V/+15 V GS = -4V/+15 FWD = C3M0065090J C3M0065090J μHμH L = 77 65.7 125 SwitchingLoss Times Switching (uJ)(ns) 30 100 50 EOff 100 125 td(on) tf 00 510 10 20 1530 External Gate Resistor RG(ext)IDS (Ohms) Drain to Source Current, (A) 2040 2550 Figure 28. Switching Times Definition Figure 27. Switching Times vs. RG(ext) 35 35 150 Conditons: Conditons: = 50 50 VV VVDD DD = Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15 V FWD = C3M0065090J L = 77 μH 30 30 125 Avalanche Current Avalanche Current (A) Switching Loss (uJ)(A) 75 Junction Temperature, TJ (°C) tr EOn 25 25 25 100 ETotal 20 20 75 15 15 EOn 50 10 10 EOff 25 55 00 0 20 10 20 40 20 40 60 30 60 Timeto inSource Avalanche (us) Drain Current, IDS (A) Time in Avalanche TTAV AV (us) 80 40 80 Figure 29. Single Avalanche SOA curve 7 50 ETotal 10 00 0 25 td(off) 20 75 00 0 C3M0065090J Rev. D, 06-2019 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 150 40 0 100 50 100 175 Test Circuit Schematic Q1 RG VDC VGS= - 4 V KS Q2 RG KS Figure 30. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0065090J Rev. D, 06-2019 Package Dimensions TO-263-7 Package 7L D2PAK Dim All Dimensions in Millimeters Min C3M0065090J Rev. D, 06-2019 Max 4.570 A 4.300 4.435 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 9.125 D 9.025 9.075 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e 9 typ 1.27 H 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚ Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/Tools-and-Support Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power/Tools-and-Support Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0065090J Rev. D, 06-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power