TSM220NB06CR
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 35A, 22mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
PARAMETER
VALUE
UNIT
VDS
60
V
22
mΩ
23
nC
● Low gate charge for fast power switching
● 100% UIS and Rg tested.
RDS(on) (max)
● 175°C Operating Junction Temperature
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
VGS = 10V
Qg
APPLICATIONS
●
●
●
●
BLDC Motor Control
Battery Power Management
DC-DC converter
Secondary Synchronous Rectification
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
(Note 1)
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
LIMIT
UNIT
VDS
60
V
VGS
±20
V
ID
TA = 25°C
Total Power Dissipation
SYMBOL
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
35
8
A
IDM
140
A
IAS
EAS
15
33.8
A
mJ
PD
PD
68
23
3.1
1
W
W
TJ, TSTG
- 55 to +175
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.2
°C/W
Junction to Ambient Thermal Resistance
RӨJA
48
°C/W
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
2
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper.
1
Version: B1804
TSM220NB06CR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
2
3.3
4
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
1
--
--
100
VGS = 0V, VDS = 60V
Drain-Source Leakage Current
IDSS
VGS = 0V, VDS = 60V
TJ = 125°C
Drain-Source On-State Resistance
(Note 3)
Forward Transconductance
Dynamic
(Note 3)
µA
VGS = 10V, ID = 8A
RDS(on)
--
19
22
mΩ
VDS = 10V, ID = 8A
gfs
--
35
--
S
Qg
--
23
-
Qgs
--
6.5
--
Qgd
--
5.4
--
Ciss
--
1454
--
Coss
--
90
--
Crss
--
24
--
Rg
0.6
2
4
td(on)
--
3
--
tr
--
19
--
td(off)
--
10
--
tf
--
18
--
VSD
--
--
1.2
V
(Note 4)
Total Gate Charge
VGS = 10V, VDS = 30V,
Gate-Source Charge
ID = 8A
Gate-Drain Charge
Input Capacitance
VGS = 0V, VDS = 30V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 4)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 30V,
Turn-Off Delay Time
ID = 8A, RG = 2Ω
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 3)
VGS = 0V, IS = 8A
Reverse Recovery Time
IS = 8A,
trr
--
16
--
ns
Reverse Recovery Charge
dI/dt = 100A/μs
Qrr
--
11
--
nC
Notes:
1.
2.
3.
4.
Silicon limited current only.
L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 15A, Starting TJ = 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM220NB06CR RLG
PACKAGE
PACKING
PDFN56
2,500pcs / 13” Reel
2
Version: B1804
TSM220NB06CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
40
40
VGS=10V
VGS=8V
VGS=7V
VGS=6V
VGS=5.5V
30
35
ID, Drain Current (A)
ID, Drain Current (A)
35
25
20
VGS=5V
15
10
30
25
20
25℃
15
10
175℃
5
0
0
0
1
2
3
4
5
0
On-Resistance vs. Drain Current
3
4
5
6
10
0.04
0.03
0.02
VGS=10V
0.01
0
0
10
20
30
VDS=30V
ID=8A
8
6
4
2
0
40
0
5
VGS=10V
ID=8A
1.5
1
0.5
0
-75 -50 -25
0
25
50
75 100 125 150 175
15
20
25
On-Resistance vs. Gate-Source Voltage
RDS(on), Drain-Source On-Resistance (Ω)
On-Resistance vs. Junction Temperature
2.5
10
Qg, Gate Charge (nC)
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
2
Gate-Source Voltage vs. Gate Charge
0.05
VGS, Gate to Source Voltage (V)
R DS(on), Drain-Source On-Resistance (Ω)
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
2
-55℃
5
TJ, Junction Temperature (°C)
0.08
0.07
0.06
0.05
0.04
0.03
ID=8A
0.02
0.01
0
4
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
3
Version: B1804
TSM220NB06CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
BVDSS (Normalized)
Drain-Source Breakdown Voltage
2000
C, Capacitance (pF)
1800
1600
CISS
1400
1200
1000
800
600
CRSS
400
COSS
200
0
1.2
ID=5mA
1.1
1
0.9
0.8
0
10
20
30
40
50
60
-75 -50 -25
VDS, Drain to Source Voltage (V)
25
50
75 100 125 150 175
TJ, Junction Temperature (°C)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
100
IS, Reverse Drain Current (A)
1000
RDS(ON)
10
SINGLE PULSE
RӨJC=2.2°C/W
TC=25°C
175℃
10
25℃
-55℃
1
0.1
1
0.1
1
10
0.2
100
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Normalized Effective Transient
Thermal Impedance, ZӨJC
ID, Drain Current (A)
0
SINGLE PULSE
RӨJC=2.2C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.1
t, Square Wave Pulse Duration (sec)
4
Version: B1804
TSM220NB06CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
TSC
220NB06
GYWWF
G
Y
WW
F
5
TSC
220NB06
GYWWF
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
Version: B1804
TSM220NB06CR
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: B1804