FR107W

FR101W – FR107W 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features Glass passivated device Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 2 5 A Peak Low Power Loss Ultra-Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O SOD - 123 1.0±0.2 Cathode Band Top View ｒ 1.9± 0.1 ! ! ! ! ! ! ! ! Mechanical Data 0.10-0.30 ｕｃ ｎｄ 3.7±0.2 Dimensions in millimeters ｍｉ ! ! ! ! 0.6±0.25 Case: SOD-123, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version ｃｏ ! ! ｔｏ 1.4± 0.15















































































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Ｓｅ Maximum Ratings and Electrical Characteristics Characteristic Symbol RMS Reverse Voltage ＣＲ Ｏ　 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current @TL = 100°C ＪＳ ＭＩ FR101 FR102 FR103 FR104 FR105 FR106 FR107 UNITS VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 800 V IO 1.0 A IFSM 25 A @IF = 1.0A VFM 1.3 V @TA = 25°C @TA = 100°C IRM 10 500 µA Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @TA=25°C unless otherwise specified Reverse Recovery Time (Note 2) t rr Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 150 250 4 R
JL 180 Tj, TSTG -65 to +150 500 nS pF °C/W °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. www.jsmsemi.com 第１／２页 FR101W – FR107 W 1.0A GLASS PASSIVATED FAST RECOVERY DIODE 1.0 10 IF, INSTANTANEOUS FWD CURRENT (A) 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 175 1.0 0.1 Tj = 25°C Pulse width = 300 µs 0.01 200 Cj, CAPACITANCE (pF) ｃｏ 100 Ｓｅ ｍｉ 20 0 1 ＭＩ Ｃ ＲＯ 　 10 1 100 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 +0.5A 10Ω NI Device Under Test (-) Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI 10 trr 50Ω NI (Non-inductive) (-) Tj = 25°C f = 1MHz 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current (+) 1.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics ｎｄ 30 ＪＳ IFSM, PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) ｒ 0.6 ｔｏ 0.8 ｕｃ I(AV), AVERAGE FWD RECTIFIED CURRENT (A)

Oscilloscope (Note 1) 0A -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit www.jsmsemi.com 第２／２页