BZV55B47L0G

BZV55B2V4 - BZV55B75 Taiwan Semiconductor 500mW, 2% Tolerance Zener Diodes FEATURES KEY PARAMETERS ● Wide zener voltage range selection: 2.4V to 75V ● VZ tolerance selection of ± 2% ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 2.4-75 V Test current IZT 5 mA PD 500 mW VF at IF=100mA 1 V TJ Max. 175 °C APPLICATIONS ● ● ● ● Low voltage stabilizers or voltage references Adapters Lighting application On-board DC/DC converter Package Mini-MELF Configuration Single die MECHANICAL DATA ● ● ● ● Case: Mini-MELF Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 0.03g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage @ IF=100mA SYMBOL VALUE UNIT VF 1 V Power dissipation PD 500 mW Junction temperature range TJ -65 to +175 °C Storage temperature range TSTG -65 to +175 °C SYMBOL TYP UNIT RӨJA 300 °C/W THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: F1804 BZV55B2V4 - BZV55B75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE PART NUMBER TEST REGULAR TEST CURRENT IMPEDANCE CURRENT VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK V mA Ω Ω mA LEAKAGE CURRENT IR @ V R µA V Min. Nom. Max. Max. Max. BZV55B2V4 2.35 2.4 2.45 5 85 600 1.0 50 1.0 BZV55B2V7 2.65 2.7 2.75 5 85 600 1.0 10 1.0 BZV55B3V0 2.94 3.0 3.06 5 85 600 1.0 4 1.0 BZV55B3V3 3.23 3.3 3.37 5 85 600 1.0 2 1.0 BZV55B3V6 3.53 3.6 3.67 5 85 600 1.0 2 1.0 BZV55B3V9 3.82 3.9 3.98 5 85 600 1.0 2 1.0 BZV55B4V3 4.21 4.3 4.39 5 75 600 1.0 1 1.0 BZV55B4V7 4.61 4.7 4.79 5 60 600 1.0 0.5 1.0 BZV55B5V1 5.00 5.1 5.20 5 35 550 1.0 0.1 1.0 BZV55B5V6 5.49 5.6 5.71 5 25 450 1.0 0.1 1.0 BZV55B6V2 6.08 6.2 6.32 5 10 200 1.0 0.1 2.0 BZV55B6V8 6.66 6.8 6.94 5 8 150 1.0 0.1 3.0 BZV55B7V5 7.35 7.5 7.65 5 7 50 1.0 0.1 5.0 BZV55B8V2 8.04 8.2 8.36 5 7 50 1.0 0.1 6.2 BZV55B9V1 8.92 9.1 9.28 5 10 50 1.0 0.1 6.8 BZV55B10 9.80 10 10.20 5 15 70 1.0 0.1 7.5 BZV55B11 10.78 11 11.22 5 20 70 1.0 0.1 8.2 BZV55B12 11.76 12 12.24 5 20 90 1.0 0.1 9.1 BZV55B13 12.74 13 13.26 5 26 110 1.0 0.1 10 BZV55B15 14.70 15 15.30 5 30 110 1.0 0.1 11 BZV55B16 15.68 16 16.32 5 40 170 1.0 0.1 12 BZV55B18 17.64 18 18.36 5 50 170 1.0 0.1 13 BZV55B20 19.60 20 20.40 5 55 220 1.0 0.1 15 BZV55B22 21.56 22 22.44 5 55 220 1.0 0.1 16 BZV55B24 23.52 24 24.48 5 80 220 1.0 0.1 18 BZV55B27 26.46 27 27.54 5 80 220 1.0 0.1 20 BZV55B30 29.40 30 30.60 5 80 220 1.0 0.1 22 BZV55B33 32.34 33 33.66 5 80 220 1.0 0.1 24 BZV55B36 35.28 36 36.72 5 80 220 1.0 0.1 27 BZV55B39 38.22 39 39.78 2.5 90 500 0.5 0.1 28 BZV55B43 42.14 43 43.86 2.5 90 600 0.5 0.1 32 BZV55B47 46.06 47 47.94 2.5 110 700 0.5 0.1 35 BZV55B51 49.98 51 52.02 2.5 125 700 0.5 0.1 38 BZV55B56 54.88 56 57.12 2.5 135 1000 0.5 0.1 42 BZV55B62 60.76 62 63.24 2.5 150 1000 0.5 0.1 47 BZV55B68 66.64 68 69.36 2.5 160 1000 0.5 0.1 51 BZV55B75 73.50 75 76.50 2.5 170 1000 0.5 0.1 56 2 Max. Version: F1804 BZV55B2V4 - BZV55B75 Taiwan Semiconductor Notes: 1. The zener voltage (VZ) is tested under pulse condition of 30ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK. ORDERING INFORMATION PART NO. (Note 1) PACKAGE PACKING BZV55Bxxx L0 MINI MELF 10K / 13" Reel BZV55Bxxx L0G MINI MELF 10K / 13" Reel BZV55Bxxx L1 MINI MELF 2.5K / 7" Reel BZV55Bxxx L1G MINI MELF 2.5K / 7" Reel Notes: 1. "xxx" defines voltage from 2.4V (BZV55B2V4) to 75V (BZV55B75) 3 Version: F1804 BZV55B2V4 - BZV55B75 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Power Dissipation VS. Ambient Fig. 2 Total Capacitance Temperature 1000 Total Capacitance (pF) PD-Power DIssipation (mW) 600 500 400 300 200 f=1MHz TA=25oC VR=0 100 VR=2V VR=5V 10 VR=20V 100 VR=25V 1 0 0 40 80 120 160 0 200 20 40 60 80 Temperature ( C) VZ - Reverse Voltage (V) Fig. 3 Differential Impedance VS. Zener Fig. 4 Forward Current VS. Forward Voltage o Voltage 1000 TA=25oC IZ=1mA IZ=2mA IZ=5mA 100 Forward Current (mA) Differential Zener Impedance(Ohm) 1000 IZ=10mA 10 100 10 1 1 0 0.1 1 10 0.0 100 0.2 0.4 0.6 0.8 1.0 1.2 VF - Forward Voltage (mV) VZ - Reverse Voltage (V) 4 Version: F1804 BZV55B2V4 - BZV55B75 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION Mini-MELF Unit (mm) DIM. C Unit (inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.50 0.008 0.020 B A SUGGEST PAD LAYOUT Unit (mm) Unit (inch) Typ. Typ. A 1.25 0.049 DIM. 5 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 Version: F1804 BZV55B2V4 - BZV55B75 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: F1804