MD5125-DFN1x1-4L

Ultra-low Power Consumption LDO MD51XX Series CMOS Voltage Regulator With ON/OFF Switch 300mA MD51XX is a highly accurate low dropout voltage regulator (LDO) manufactured in CMOS processes. It can deliver up to 300mA of current while consuming only 0.5uA of quiescent current. It consists of a reference voltage generator, an error amplifier, a current foldback circuit, and a phase compensation circuit plus a driver transistor. ■ ■ FEATURES:  Ultra-low Quiescent Current: 500nA  Highly Accurate: ±2％  Dropout Voltage: 60mV@IOUT=100mA  Maximum Output Current: 300mA  Input Voltage Range: 1.4V~7.0V  Temperature Stability: ±50ppm/℃     APPLICATIONS: Smart wearer Long-life battery-powered devices Portable mobile devices, such as mobile phones, cameras, and so on Wireless communication equipment ON/OFF Logic = Enable High Standby Current: 10nA  COUT Discharge Circuit when EN Disable is Active  Protections Circuits: Current Limiter, Short Circuit, Foldback  Output Capacitor: Low ESR Ceramic Capacitor Compatible   ■ Product Selections: Type MD5112 Output Voltage （note 1*） 1.2V Current Limit 470mA Package （note 2*） Accuracy MARKING (note 3*） ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 112\ 5112 MD5115 1.5V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 115\ 5115 MD5118 1.8V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 118\ 5118 MD5121 2.1V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 121\ 5121 MD5125 2.5V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 125\ 5125 MD5128 2.8V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 128\ 5128 MD5130 3.0V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 130\ 5130 MD5133 3.3V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 133\ 5133 MD5136 3.6V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L 136\ 5136 140\ 5140 150\ 5150 MD5140 4.0V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L MD5150 5.0V 470mA ±2% DFNWB-4L\SOT89-3L\SOT23-5L\SOT23-3L Notes: 1* Customer can request to customize the output voltage ranged from 1.2V to 5V if desired voltage is not found in the selections. 2* Customer can request customization of package choice. 3* Please pay attention to the MARKING of the product package type. 第 1 页 共 14 页 ■ PIN CONFIGURATION(TOP VIEW): ■ Absolute Maximum Ratings: (Unless otherwise indicated: Ta=25℃) PARAMETER Input Voltage Output Voltage SYMBOL VIN VOUT Power Dissipation PD Operating Ambient Temperature Storage Temperature ESD Protection Topr RATINGS -0.3 ~ 8.0 -0.3 ~ VIN+0.3V DFNWB–4L 100 SOT23-3L 250 SOT23-5L 250 SOT89-3L 500 -40 ~ +85 UNITS V mW ℃ Tstg ESD HBM -40 ~ +125 6000 V Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. ■ ELECTRICAL CHARACTERISTICS: MD51XX Series PARAMETER (Unless otherwise indicated：Ta=25℃) SYMBOL *1 Output Voltage *2 Dropout Voltage VOUT(S) VDROP Line Regulation ΔVOUT ΔVIN  VOUT(s) Load Regulation VOUT2 Temperature Stability ΔVOUT Ta  VOUT(s) GND Current (CE=VIN) IGND Shutdown Current (CE=0) Input Voltage Maximum Output Current *2 Current Limit Short Circuit Current COUT Auto Discharge ISHUT VIN CONDITIONS VIN=VOUT(S)+2.0V IOUT=10mA, VOUT(S)＜2.0V VIN=VOUT(S)+1.0V IOUT=10mA, VOUT(S)≥2.0V VCE=VIN, VOUT＜3V IOUT=100mA VCE=VIN, VOUT≥3V IOUT=100mA MIN. VOUT(S)-0.03 ISHORT 70 mV 60 0.05 0.1 ％/V 6 20 mV ±50 IOUT=100mA 40 0.5 VIN=7.0V, VCE=0 VIN=VCE=VOUT(S)+1.0V VOUT = 0.95 ×VOUT(S) VIN=VCE=VOUT(S)+1.0V VOUT=0V VCE=0, VOUT=VOUT(S) Power Supply Rejection Ratio PSRR f=10Hz, VOUT(S)=2.5V f=100Hz, VOUT(S)=2.5V f=1kHz, VOUT(S)=2.5V CE ‘H’ Level Voltage VCEH --第 2 页 共 14 页 V VOUT(S)1.02 VIN=VCE=VOUT(S)+1.0V 1mA≤IOUT≤100mA VIN=VCE=VOUT(S)+1.0V IOUT=1mA -40℃≤Ta≤85℃ no load --- UNIT VOUT(S)+0.03 VOUT(S)0.98 VOUT(S)+0.5V≤VIN=VCE≤7V IOUT=10mA RDCHG MAX. VOUT(S) IOUTMAX ILIM TYP. 0.01 1.5 ppm/℃ 0.9 uA uA 0.1 uA 7 V 250 300 mA 300 470 mA 65 mA 280 450 640 60 45 25 1.0 Ω dB 6.0 V CE ‘L’ Level Voltage CE ‘H’ Level Current CE ‘L’ Level Voltage VCEL --- 0 0.38 ICEH VIN=6.0V, VCE=VIN -0.1 0.1 ICEL VIN=6.0V, VCE=0 -0.1 0.1 uA Notes： 1. VOUT(S): Output voltage when VIN=VOUT+2V, IOUT=1 mA. 2. VDROP=VIN1 -（VOUT(S)× 0.98）where VIN1 is the input voltage when VOUT = VOUT(S)× 0.98. 3. ILIM : Output current when VIN=VOUT(S)+2V and VOUT = 0.95*VOUT(S). ■ ■ TYPICAL APPLICATIONS: Notes on Use: Input Capacitor (CIN): 1.0µF above Output Capacitor (COUT):0.1µF above 第 3 页 共 14 页 ■ TYPICAL PERFORMANCE CHARACTERISTICS: Test Conditions: VIN=VOUT+1.0V, CIN=1.0uF, COUT=0.1uF or 1.0uF, Ta=25℃, unless otherwise indicated. MD5130 MD5130 Output Voltage vs. Temperature (COUT=0.1uF) Supply Current vs. Temperature (COUT=0.1uF) GND Current vs. Input Voltage (COUT=0.1uF) Dropout Voltage vs. Output Current (COUT=0.1uF) GND Current vs Output Current (COUT=1.0uF) Output Voltage vs Input Voltage (COUT=0.1uF) 第 4 页 共 14 页 ■ TYPICAL PERFORMANCE CHARACTERISTICS(CONTINUTED): Test Conditions: VIN=VOUT+1.0V, CIN=1.0uF, COUT=0.1uF or 1.0uF, Ta=25℃, unless otherwise indicated. Load Transient: MD5130 (IOUT=1mA~10mA~1mA) Load Transient: MD5130 (IOUT=50mA~100mA~50mA) Load Transient: MD5130 (IOUT=1mA~10mA~1mA) Load Transient: MD5130 (IOUT=50mA~100mA~50mA) Line Transient: MD5130 (IOUT=1mA) Line Transient: MD5130 (IOUT=1mA) 第 5 页 共 14 页 ■ TYPICAL PERFORMANCE CHARACTERISTICS(CONTINUTED): Test Conditions: VIN=VOUT+1.0V, CIN=1.0uF, COUT=0.1uF or 1.0uF, Ta=25℃, unless otherwise indicated. Line Transient: MD5130 (IOUT=10mA) Line Transient: MD5130 (IOUT=10mA) Power Up: MD5130 (IOUT=1mA) Power Up: MD5130 (IOUT=100mA) EN Enable: MD5130 (IOUT=1mA) EN Enable: MD5130 (IOUT=100mA) 第 6 页 共 14 页 ■ TYPICAL PERFORMANCE CHARACTERISTICS(CONTINUTED): Test Conditions: VIN=VOUT+1.0V, CIN=1.0uF, COUT=0.1uF or 1.0uF, Ta=25℃, unless otherwise indicated. MD5130 Output Current Fold-back MD5130 Power Supply Rejection Ratio 第 7 页 共 14 页 ■ OPERATIONAL EXPLANATION： 1. Output voltage control The voltage divided by resistors R1 and R2 is compared with the internal reference voltage by the error amplifier. The amplifier output then drives the P-channel MOSFET connected to the VOUT pin. The output voltage at the VOUT pin is regulated by this negative feedback system. The current limit circuit and short protect circuit operate in relation to output current level. Further, the IC's internal circuitry can be in operation or shutdown modes controlled by the CE pin's signal. 2. Pass transistor The pass transistor with low turn-on resistance used in MD51XX is a P-channel MOSFET. If the potential on VOUT pin is higher than VIN, it is possible that IC will be destroyed due to reverse current which is caused by parasitic diodes between VIN and VOUT. Therefore, the VOUT pin potential exceeds VIN+0.3V is not allowed. 3. Current foldback and short circuit protection The MD51XX series includes a combination of a fixed current limiter circuit and a foldback circuit, which aid the operations of the current limiter and circuit protection. When the load current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. As a result of this drop in output voltage, the foldback circuit operates, output voltage drops further and output current decreases. The short circuit current is about 65mA (typical value). This design can prevent the chip be damaged due to over temperature, moreover, the heat dissipation is limited by the package type. Special attention should be paid to that the product of the dropout voltage on the chip and the output current must be smaller than the heat dissipation. 4. COUT Auto-Discharge Function The MD51XX series can quickly discharge the electric charge at the output capacitor (COUT), when a low signal is set to the CE pin, which puts the whole IC into OFF state. The discharge function is achieved by an internal switch located between the VOUT pin and the GND pin. In this state, the application is protected from a glitch operation caused by the electric charge at the output capacitor (COUT). Moreover, discharge time of the output capacitor (COUT) is set by the COUT auto-discharge resistance (RDCHG) and the output capacitor (COUT). By setting time constant of a COUT auto-discharge resistance value (RDCHG) and an output capacitor value (COUT) as (= COUT x RDCHG), the output voltage after discharge via the internal switch is calculated by the following formulas. -t/ V = VOUT(S)×e or t=ln（VOUT(S) / V） 第 8 页 共 14 页 V: Output voltage after discharge VOUT(S): Output voltage t: Discharge time : COUT x RDCHG Please also note RDCHG is depended on VIN and When VIN is high, RDCHG is low. ■ Notes: 1. The input and output capacitors should be placed as close as possible to the IC. 2. If the impedance of the power supply is high, which is caused by forgetting installing input capacitor or installing too small value capacitor, the oscillation may occur. 3. Pay attention to the operation conditions of input and output voltage and load current, such that the power consumption in the IC should not exceed the allowable power consumption of the package even though the chip has short circuit protection. 4. IC has a built-in anti-static protection (ESD) circuit, but please do not add excessive stress to the IC. 第 9 页 共 14 页 ■ PACKAGING INFORMATION: 第 10 页 共 14 页 ■ PACKAGING INFORMATION(Continued): 第 11 页 共 14 页 ■ PACKAGING INFORMATION(Continued): 第 12 页 共 14 页 ■ PACKAGING INFORMATION(Continued): 第 13 页 共 14 页 ■ ORDER INFORMATION: TYPE PACKAGE TEMPERATURE RANGE DFNWB-4L（1X1） -40 to +85°C 10000 /Tape & Reel SOT89-3L -40 to +85°C 1000/ Tape & Reel SOT23-5L -40 to +85°C 3000/ Tape & Reel SOT23-3L -40 to +85°C 3000/ Tape & Reel MD51XX For the newest datasheet, please see the website: Version V1.1: 20190430 第 14 页 共 14 页 www.md-ic.com.cn