BSN20

BSN20 N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 50V 300mA ＜2.5ohm ＜3.0ohm General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 50 V Gate-source Voltage VGS ±20 V Drain Current ID 300 mA Pulsed Drain Current A IDM 1.5 A Total Power Dissipation @ TA=25℃ PD 350 mW RθJA 357 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range www.slkormicro.com 1 Unit BSN20 ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 50 Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V 1 μA IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 V Static Drain-Source On-Resistance RDS(ON) Static Parameter V Gate-Body Leakage Current Diode Forward Voltage Maximum Body-Diode Continuous Current 0.4 VGS= 10V, ID=100mA 1.3 2.5 VGS= 4.5V, ID=50mA 1.5 3.0 Ω VSD IS=100mA,VGS=0V IS 1.2 V 100 mA Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 17.5 VDS=25V,VGS=0V,f=1MHZ 11.5 pF 6.5 Switching Parameters Total Gate Charge Turn-on Delay Time Qg VGS=10V,VDS=25V,ID=0.3A 1.7 Reverse recovery Time tD(off) trr ns 17 VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.slkormicro.com nC 5 tD(on) VGS=10V,VDD=25V, ID=300mA, RGEN=6Ω Turn-off Delay Time 2.4 2 30 ns BSN20 ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.slkormicro.com Figure6. Drain-Source on Resistance 3 BSN20 Figure7. Safe Operation Area www.slkormicro.com Figure8. Switching wave 4 BSN20 ■ SOT-23 Package information ■SOT-23 Suggested Pad Layout www.slkormicro.com 5