TSF30U120C C0G

TSF30U100C – TSF30U120C Taiwan Semiconductor 30A, 100V - 120V Low VF Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 30 A VRRM 100 -120 V IFSM 160 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device TSF30U100C TSF30U120C UNIT TSF30U100C TSF30U120C Repetitive peak reverse voltage VRRM 100 120 V Reverse voltage, total rms value VR(RMS) 70 84 V Isolation voltage from terminal to heatsink t = 1 min VAC 1500 V Forward current Surge peak forward current, 8.3ms single half sinewave superimposed on rated load Critical rate of rise of off-state voltage IF 30 A IFSM 160 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: E2105 TSF30U100C – TSF30U120C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TSF30U100C Junction-to-case thermal resistance TSF30U120C RӨJC TYP UNIT 2.5 °C/W 3.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) TSF30U100C TSF30U120C TSF30U100C TSF30U120C TSF30U100C TSF30U120C TSF30U100C TSF30U120C TSF30U100C TSF30U120C TSF30U100C TSF30U120C Reverse current @ rated VR per diode (2) SYMBOL IF = 5A, TJ = 25°C IF = 7.5A, TJ = 25°C IF = 15A, TJ = 25°C VF IF = 5A, TJ = 125°C IF = 7.5A, TJ = 125°C IF = 15A, TJ = 125°C TJ = 25°C TJ = 125°C IR TYP 0.52 0.56 0.56 0.65 0.66 0.78 0.44 0.49 0.51 0.56 0.60 0.65 MAX 0.74 0.88 0.67 0.75 UNIT V V V V V V V V V V V V - 500 µA - 35 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF30UxC ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF30U100C) to 120V(TSF30U120C) 2 Version: E2105 TSF30U100C – TSF30U120C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TSF30U100C 25 TSF30U120C 15 10 TSF30U100C TSF30U120C 100 5 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 20 30 40 50 60 70 100 Fig.4 Typical Forward Characteristics 80 90 100 100 10 TSF30U100C 10 TJ=150°C UF1DLW 1 TJ=125°C TJ=125°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSF30U100C 10 REVERSE VOLTAGE (V) 100 TSF30U120C 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 TJ=25°C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 3 1.1 1.2 1.1 1.2 100 10 TSF30U120C 10 UF1DLW TJ=150°C 1 TJ=125°C TJ=125°C 0.1 TJ=25°C TJ=25°C 1 TJ=100°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) 20 1000 (A) 30 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 35 0.3 0.4 0.5 0.7 0.5 0.6 VOLTAGE 0.7 0.8 FORWARD (V) 0.9 0.9 1.1 1 Version: E2105 TSF30U100C – TSF30U120C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 4 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: E2105 TSF30U100C – TSF30U120C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: E2105