AS1332
1 General Description
The AS1332 is a step-down DC-DC converter designed to power radiofrequency (RF) power amplifiers (PAs) from a single Li-Ion battery. The device also achieves high-performance in mobile phones and similar RF PA applications. The AS1332 steps down an input voltage of 2.7V to 5.5V to output voltages ranging from 1.3V to 3.16V. Using a VCON analog input, the output voltage is set for controlling power levels and efficiency of the RF PA. The RF interferences are minimized due to the fixedfrequency PWM operation. The battery consumption is reduced to 0.01µA (typ.) during shutdown. Because of the high switching frequencies (2 MHz) tiny surface-mount components can be used. Additional to the small size the amount is also small. Only three external components are required, an inductor and two ceramic capacitors. The AS1332 is available in a 8-pin WL-CSP.
D a ta s h e e t
6 5 0 m A , St e p - D o w n D C - D C C o n v e r t e r f o r R F P o w e r A m p l i f i e r s
2 Key Features
! ! !
PWM Switching Frequency: 2MHz Single Lithium-Ion Cell Operation (2.7V to 5.5V) Dynamic Programmable Output Voltage (1.3V to 3.16V) Maximum load capability of 650mA High Efficiency (96% Typ at 3.6VIN, 3.16VOUT at 400mA) from internal synchronous rectification Current Overload Protection Thermal Overload Protection Soft Start 8-pin WL-CSP
! !
! ! ! !
3 Applications
The AS1332 is an ideal solution for cellular phones, hand-held radios, RF PC cards, and battery powered RF devices.
Figure 1. Typical Application Circuit
VIN 2.7V to 5.5V PVIN VDD VOUT 1.3V to 3.16V
10 µF
3.3 µH EN SW
AS1332
FB 4.7 µF
VOUT = 2.5 x VCON
VCON 0.52V to 1.27V
VCON
PGND
AGND
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AS1332
Datasheet - P i n A s s i g n m e n t s
4 Pin Assignments
Figure 2. Pin Configuration
Top View SW PVIN A1 A2 A3 PGND PVIN A3
Bottom View SW A2 A1 PVIN
VDD
B1
B3
AGND
AGND
B3
B1
VDD
EN
C1
C2 VCON
C3
FB
FB
C3
C2 VCON
C1
EN
Pin Descriptions
Table 1. Pin Descriptions Pin Name PVIN VDD EN VCON FB AGND PGND SW Pin Number A1 B1 C1 C2 C3 B3 A3 A2 Description +2.7V to + 5.5V Power Supply Voltage. Input to the internal PFET switch. +2.7V to + 5.5V Analog Supply Input. Bypass this pin to GND with a ≥10µF capacitor. Active-High Enable Input. Set this digital input high for normal operation. For shutdown, set low. Voltage Control Analog Input. VCON controls VOUT. Feedback Pin. Connect to the output at the output filter capacitor. Analog and Control Ground Power Ground Switch Pin. Switch node connection to the internal PFET switch and NFET synchronous rectifier. Limit specification of the AS1332.
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AS1332
Datasheet - A b s o l u t e M a x i m u m R a t i n g s
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter VDD, PVIN to AGND PGND to AGND EN, FB, VCON SW PVIN to VDD Operating Temperature Range Junction Temperature (TJ-MAX) Storage Temperature Range Maximum Lead Temperature (soldering, 10sec) ESD Rating Human Body Model Operating Ratings Input Voltage Range Recommended Load Current Junction Temperature (TJ) Range -40 2.7 5.5 650 +125 V mA ºC In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). 2 kV HBM MIL-Std. 883E 3015.7 methods -65 Min -0.3 -0.3 Max +7 +0.3 Units V V V V V ºC ºC ºC ºC 7V max Comments
AGND - 0.3 VDD + 0.3 PGND - 0.3 PVIN + 0.3 -0.3 -40 +0.3 +85 +150 +150 +260
Ambient Temperature (TA) Range
-40
+85
ºC
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AS1332
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
TA = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. Typ values are at TA = 25ºC. Table 3. Electrical Characteristics Symbol VFB,MIN VFB VFB,MAX ISHDN IQ
2 1
Parameter Feedback Voltage at Minimum Setting Feedback Voltage Feedback Voltage at Maximum Setting Shutdown Supply Current DC Bias Current into VDD
Conditions VCON = 0.4V VCON = 1.1V VCON = 1.4V EN = SW = VCON = 0V VCON = 1V, FB = 0V, No Switching Current limit is built-in, fixed, and not adjustable. ISW = 200mA; TA = +25°C ISW = 200mA ISW = -200mA; TA = +25°C ISW = -200mA
Min 1.21 2.693 3.03
Typ 1.30 2.75 3.17 0.01 1
Max 1.39 2.807 3.29 2 1.4
Units V V V µA mA
DC-DC Switches ILIM,PFET RDSON(P) Switch Peak Current Limit Pin-Pin Resistance for PFET 935 1100 140 1200 200 230 300 415 485 mA mΩ mΩ
RDSON(N)
Pin-Pin Resistance for NFET
Control Inputs VIH,EN VIL,EN Logic High Input Threshold Logic Low Input Threshold 5 VCON swept down VCON swept up
3
1.2 0.5 7 0.556 1.312
V V µA V V kΩ 10 2.5 µA V/V
IPIN,ENABLE Pin Pull Down Current VCON,min VCON,max ZCON ICON Gain Oscillator FOSC Internal Oscillator Frequency 1.8 VCON Threshold Commanding VFB,MIN VCON Threshold Commanding VFB,MAX VCON Input Resistance 0.484 1.208 100 -10 0.556V ≤ VCON ≤ 1.208V
0.52 1.27
TA = +25°C
Control Pin Leakage Current VCON to VOUT Gain
2
2.2
MHz
1. Shutdown current includes leakage current of PFET. 2. IQ specified here is when the part is operating at 100% duty cycle. 3. Derived by input leakage test.
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AS1332
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
System Characteristics
TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. The following parameters are verfied by characterisation and are not production tested. Table 4. System Characteristics Symbol Control Inputs Time for VOUT to rise from 1.3V to 3.16V TRESP Time for VOUT to fall from 3.16V to 1.3V VCON Input Capacitance Linearity in Control Range 0.556V to 1.208V VIN = 4.2V, COUT = 4.7µF, L = 3.3µH, RLOAD = 5Ω VIN = 4.2V, COUT = 4.7µF, L = 3.3µH, RLOAD = 10Ω VCON = 1V, Test frequency = 100 kHz VIN = 3.6V, Monotonic in nature -3 20 20 30 µs 30 20 +3 pF % Parameter Conditions nit Min Typ Max Us
CCON Linearity
T_ON
Turn-On Time EN = Low to High, VIN = 4.2V, (time for output to reach 3.16V from VOUT = 3.16V, COUT = 4.7µF, IOUT ≤ 1mA enable low to high transition) VIN = 3.6V, VOUT = 1.3V, IOUT = 90mA VIN = 3.6V, VOUT = 3.16V, IOUT = 400mA VIN = 3V to 4.5V, VOUT = 1.3V, IOUT = 10mA to 400mA VIN = 600mV perturbance, over Vin range 3V to 5.5V; TRISE = TFALL = 10µs, VOUT = 1.3V, IOUT = 100mA VIN = 3.1/3.6/4.5V, VOUT = 1.3V, transients up to 100mA, TRISE = TFALL = 10µs sine wave perturbation frequency = 10kHz, amplitude = 100mVp-p
210
750
µs
Performance Parameters
η
Efficiency (L = 3.3µH, DCR ≤ 100mΩ) Ripple voltage, PWM mode
1
87 96 10
% mVp -p mVp k mVp k dB
VOUTripple Line_tr
Line transient response
50
Load_tr PSRR
Load transient response VIN = 3.6V, VOUT = 1.3V, IOUT = 100mA
50 40
1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and capacitors.
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AS1332
Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
7 Typical Operating Characteristics
Circuit in Figure 31 on page 12, PVIN = VDD = EN = 3.6V, L = 3.3µH (LPS4018-332ML_), CIN = 10µF (GRM21BR61C106KA01), COUT = 4.7µF (GRM32ER71H475KA88) unless otherwise noted; Figure 3. IQ vs. VIN; VCON = 2V, FB = 0V, no switching
1.4
- 45°C
Figure 4. ISHDN vs. Temperature; VCON = 0V, EN = 0V
0.25
Vi n=2.7V Vi n=3.6V
Shutdown Current (µA) .
Quiescent Current (mA)
1.2 1 0.8 0.6 0.4 0.2 2.5 3
+ 25°C + 95°C
0.2
Vi n=4.2V Vi n=5.5V
0.15
0.1
0.05
3.5
4
4.5
5
5.5
0 -40
-15
10
35
60
85
Supply Voltage (V) Figure 5. Switching Frequency Variation vs. Temp. Switching Frequency Variation (%)
4 3
Temperature (°C) Figure 6. VOUT vs. VIN; VOUT = 1.3V
1.39 1.36
Output Voltage (V)
2 1 0 -1 -2 -3 -4 -40
Vi n=2.7V Vi n=3.6V Vi n=4.2V Vi n=5.5V
1.33 1.3 1.27 1.24 1.21
Iout=50mA Iout=300mA Iout=650mA
-15
10
35
60
85
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Temperature (°C)
Supply Voltage (V)
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Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
Figure 7. VOUT vs. Temp; VIN = 3.6V, VOUT = 1.3V
1.35
Iout=50mA
Figure 8. VOUT vs. Temp; VIN = 3.6V, VOUT = 3.16V
3.2
Iout=50mA
1.34 1.33
Iout=300mA Iout=650mA
3.19 3.18
Iout=300mA Iout=650mA
Output Voltage (V)
1.32 1.31 1.3 1.29 1.28 1.27 1.26 1.25 -40 -15 10 35 60 85
Output Voltage (V)
3.17 3.16 3.15 3.14 3.13 3.12 3.11 3.1 -40 -15 10 35 60 85
Temperature (°C)
Temperature (°C)
Figure 9. Switch Peak Current Limit vs. Temp.
1.2
Figure 10. VCON vs. VOUT; VIN = 4.2V, RLOAD = 8Ω
3.5
Peak Current Limit (A)
Output Voltage (V)
1.15
3
2.5
1.1
2
1.05
Vi n=2.7V Vi n=3.6V Vi n=5.5V
1.5
- 45°C + 25°C + 90°C
1 -40
1 -15 10 35 60 85 0 0.5 1 1.5 2
Temperature (°C)
VCON Voltage (V)
Figure 11. Efficiency vs. VOUT; VIN = 3.6V
100 95
Figure 12. Efficiency vs. IOUT; VOUT = 1.3V
100
Vi n=2.7V Vi n=3.25V
95
Vi n=3.6V Vi n=4.2V Vi n=5.5V
Efficiency (%)
90 85 80 75 70 1 1.5 2 2.5 3 3.5
Rl oad=5Ohm Rl oad=10Ohm Rl oad=15Ohm
Efficiency (%)
90 85 80 75 70 0 100 200 300 400 500 600 700 800
Output Voltage (V)
Output Current (mA)
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Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
Figure 13. Efficiency vs. IOUT; VOUT = 3.09V
100 95
Efficiency (%)
90 85 80
Vi n=2.7V
75 70 0 100 200 300
Vi n=3.25V Vi n=3.6V Vi n=4.2V Vi n=5.5V
400 500 600 700 800
Output Current (mA)
Figure 14. Load Transient Response; VIN = 3.6V, VOUT = 1.3V
Figure 15. Startup; VIN = 3.6V, VOUT = 1.3V, IOUT