SS8550W Y2

TRANSISTOR（PNP） SS8550W SOT–323 FEATURES Complimentary to SS8050W 1. BASE 2. EMITTER 3. COLLECTOR MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-100mA 120 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V, -1 V VBEF IB=-1A -1.55 V Base-emitter positive favor voltage VCE=-10mA VCE= -10V, IC= -50mA fT Transition frequency Cob output capacitance f=30MHz (VCB=-10V,IE=0,f=1MHz) 100 MHz 20 CLASSIFICATION OF hFE(1) Page 1 of 3 RANK L H J RANGE 120–200 200–350 300–400 5/30/2011 pF Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ -2mA -1.8mA -0.30 Ta=100℃ -1.4mA IC —— IC hFE (A) -1.6mA -1.2mA -0.25 -1mA -0.20 -800uA -0.15 -600uA DC CURRENT GAIN -0.35 COLLECTOR CURRENT hFE 1000 -0.40 Ta=25℃ 100 -0.10 -400uA -0.05 IB=-200uA -0.5 -1.0 -1.5 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE=-1V 10 —— VCE -2.0 -1 -10 (V) -100 COLLECTOR CURRENT IC VBEsat -2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -0.00 -0.0 -1000 -1500 IC (mA) IC —— -1000 Ta=100℃ -100 Ta=25℃ -10 Ta=25℃ Ta=100℃ -300 β=10 β=10 -1 -100 -1 -10 COLLECTOR CURRENT VBE -1500 -1000 -1500 -100 IC -1 -10 -100 COLLECTOR CURRENT (mA) —— IC Cob/ Cib 100 IC -1000 -1500 (mA) —— VCB/ VEB -1000 (pF) Ta=100℃ Ta=25℃ -10 -600 fT -800 —— -1000 VBE 1 -0.1 -1200 -1 -10 REVERSE VOLTAGE (mV) IC PC 250 fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) 1000 Ta=25℃ VCE=-1V -400 BASE-EMMITER VOLTAGE TRANSITION FREQUENCY 10 f=1MHz IE=0/IC=0 -1 -200 100 —— V -20 (V) Ta 200 150 100 50 VCE=-10V Ta=25℃ 10 -1 -10 COLLECTOR CURRENT Page 2 of 3 Cob C -100 CAPACITANCE COLLCETOR CURRENT IC (mA) Cib 0 -100 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 5/30/2011 150 SOT-323 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Page 3 of 3 Dimensions In Millimeters Max. Min. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8° 5/30/2011