SIT8925AE-13-33E-125.000000

SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications  AEC-Q100 with extended temperature range (-55°C to 125°C)  Automotive, extreme temperature and other high-rel electronics  Frequencies between 115.2 MHz and 137 MHz accurate to 6 decimal points  Infotainment systems, collision detection devices, and in-vehicle networking  100% pin-to-pin drop-in replacement to quartz-based XO  Power train control  Excellent total frequency stability as low as ±25 ppm  Industry best G-sensitivity of 0.1 PPB/G  LVCMOS/LVTTL compatible output  Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Electrical Specifications Table 1. Electrical Characteristics[1, 2] Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 115.20 – 137 MHz F_stab -25 – +25 ppm -30 – +30 ppm – +50 ppm Refer to Table 13 and Table 14 for the exact list of supported frequencies Frequency Stability and Aging Frequency Stability -50 Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ± 10%). Operating Temperature Range Operating Temperature Range (ambient) T_use -40 – +105 °C -40 – +125 °C Extended Industrial, AEC-Q100 Grade 2 Automotive, AEC-Q100 Grade 1 -55 – +125 °C Extended Temperature, AEC-Q100 Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd 1.62 1.8 1.98 V 2.25 – 3.63 V All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V are supported. Contact SiTime for 1.5V support – 6 8 mA No load condition, f = 125 MHz, Vdd = 2.25V to 3.63V – 4.8 6 mA No load condition, f = 125 MHz, Vdd = 1.62V to 1.98V LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% – 1.5 2.5 ns Vdd = 1.8V, 20% - 80% Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% – – Vdd Pin 1, OE Input Low Voltage VIL – – 30% Vdd Pin 1, OE Input Pull-up Impedence Z_in – 100 – k Pin 1, OE logic high or logic low Input Characteristics Startup and Resume Timing Startup Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value Enable/Disable Time T_oe – – 130 ns f = 115.20 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles RMS Period Jitter T_jitt – 1.5 2.5 ps f = 125 MHz, 2.25V to 3.63V – 1.8 3 ps f = 125 MHz, 1.8V – 0.7 – ps f = 125 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.5 – ps f = 125 MHz, Integration bandwidth = 12 kHz to 20 MHz Jitter RMS Phase Jitter (random) T_phj Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at 25 °C temperature. SiTime Corporation Rev. 1.01 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised June 18, 2015 SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Table 2. Pin Description Pin Top View Symbol Functionality Output Enable 1 OE/NC No Connect H[3]: specified frequency output L: output is high impedance. Only output driver is disabled. OE/NC 1 4 VDD GND 2 3 OUT [3] Any voltage between 0 and Vdd or Open : Specified frequency output. Pin 1 has no function. 2 GND Power Electrical ground[4] 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[4] Figure 1. Pin Assignments Notes: 3. In OE mode, a pull-up resistor of 10kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 µF or higher between Vdd and GND is required. N Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[5] – 150 °C Note: 5.Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[6] JA, 4 Layer Board JA, 2 Layer Board JC, Bottom 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 (°C/W) Package (°C/W) (°C/W) Note: 6. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[7] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 105°C 113°C 125°C 133°C Note: 7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev. 1.01 Page 2 of 12 www.sitime.com SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Test Circuit and Waveform[8] Vdd Vout 0.1µF tr 3 4 Power Supply Test Point 1 tf 80% Vdd 15pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1k OE/NC Function Figure 2. Test Circuit Figure 3. Waveform Note: 8. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams u 90% Vdd Vdd Vdd 50% Vdd T_start Pin 4 Voltage [9] No Glitch during start up OE Voltage T_oe CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_oe: Time to re-enable the clock output Figure 4. Startup Timing (OE Mode) Figure 5. OE Enable Timing (OE Mode Only) Vdd OE Voltage 50% Vdd T_oe CLK Output HZ T_oe: Time to put the output in High Z mode Figure 6. OE Disable Timing (OE Mode Only) Note: 9. SiT8925 has “no runt” pulses and “no glitch” output during startup or resume. Rev. 1.01 Page 3 of 12 www.sitime.com SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots[10] 1.8V 2.5V 2.8V 3.0V 3.3V DUT 2 DUT 3 DUT 4 DUT 5 DUT 6 DUT 7 DUT 8 DUT 9 DUT 10 25 6.5 20 Frequency (ppm) 6.0 5.5 Idd (mA) DUT 1 5.0 4.5 4.0 15 ) 10 m p 5 (p y c n 0 e u ‐5 q re F ‐10 ‐15 3.5 ‐20 3.0 ‐25 -55 -35 -15 5 25 45 65 85 105 125 ‐55 ‐35 ‐15 5 Frequency (MHz) Figure 7. Idd vs Frequency 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 4.0 55 3.5 54 2.5 2.0 1.5 1.0 85 105 125 2.5 V 2.8 V 3.0 V 3.3 V 52 51 50 49 48 47 0.5 46 119 121 123 125 127 129 131 133 135 45 119 137 121 123 125 Figure 9. RMS Period Jitter vs Frequency 1.8 V 2.5 V 2.8 V 127 129 131 133 135 137 Frequency (MHz) Frequency (MHz) 3.0 V Figure 10. Duty Cycle vs Frequency 1.8 V 3.3 V 2.5 2.5 2.0 2.0 Fall time (ns) Rise time (ns) 65 53 3.0 0.0 1.5 1.0 0.5 2.5 V 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.0 0.0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (°C) -55 -35 -15 5 25 45 65 85 105 125 Temperature (°C) Figure 11. 20%-80% Rise Time vs Temperature Rev. 1.01 45 Figure 8. Frequency vs Temperature Duty cycle (%) RMS period jitter (ps) 1.8 V 25 Temperature (°C) Temperature (°C) Figure 12. 20%-80% Fall Time vs Temperature Page 4 of 12 www.sitime.com SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots[10] 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.0 1.0 1.8 0.9 2.5 V 2.8 V 3.0 V 3.3 V IPJ (ps) IPJ (ps) 0.8 1.6 1.4 1.2 1.0 115 0.7 0.6 0.5 120 125 130 0.4 115 135 Frequency (MHz) 120 125 130 135 Frequency (MHz) Figure 13. RMS Integrated Phase Jitter Random (12k to 20 MHz) vs Frequency[11] Figure 14. RMS Integrated Phase Jitter Random (900 kHz to 7.5 MHz) vs Frequency[11] Notes: 10. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Rev. 1.01 Page 5 of 12 www.sitime.com SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Programmable Drive Strength The SiT8925 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: • Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. • Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. • Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Notes section: http://www.sitime.com/support/application-notes. EMI Reduction by Slowing Rise/Fall Time Figure 15 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period.   trise=0.05 0 Harmonic amplitude (dB) SiT8925 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8925 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 30 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: trise=0.1 trise=0.15 trise=0.2 10 M a x F re q u e n c y = trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 -10 -20 1 5 x T rf_ 2 0 /8 0 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -30 -40 Example 1 -50 -60 Calculate fMAX for the following condition: -70 -80 The SiT8925 can support up to 30 pF in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. 1 3 5 7 9 11 Harm onic num ber Figure 15. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. • Vdd = 3.3V (Table 11) • Capacitive Load: 30 pF • Desired Tr/f time = 1.46 ns (rise/fall time part number code = U) Part number for the above example: SiT8925AAE12-18E-137.000000 Drive strength code is inserted here. Default setting is “-” High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8925 device with default drive strength setting, the typical rise/fall time is 0.46ns for 5 pF output load. The typical rise/fall time slows down to 1 ns when the output load increases to 15 pF. One can choose to speed up the rise/fall time to 0.72 ns by then increasing the driven strength setting on the SiT8925 to “F”. Rev. 1.01 Page 6 of 12 www.sitime.com SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF Drive Strength \ C LOAD 5 pF 15 pF T 0.93 n/a R 1.45 n/a E 0.78 n/a B 1.09 n/a U F or "-": default 0.70 1.48 0.65 1.30 0.62 1.28 0.54 1.00 U 0.43 0.96 F 0.34 0.88 T or "-": default E Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ C LOAD 5 pF 15 pF 30 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF n/a R 1.29 n/a n/a R 1.22 n/a B 0.97 n/a n/a 0.89 n/a n/a T or "-": default E 0.55 1.12 n/a B T or "-": default 0.51 1.00 n/a 0.44 1.00 n/a E 0.38 0.92 n/a U 0.34 0.88 n/a 0.83 n/a 0.29 0.81 1.48 U F 0.30 F 0.27 0.76 1.39 Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF R 1.16 n/a n/a B T or "-": default 0.81 n/a n/a 0.46 1.00 n/a E 0.33 0.87 n/a U F 0.28 0.79 1.46 0.25 0.72 1.31 Note: 12. “n/a” indicates that the resulting rise/fall time from the respective combination of the drive strength and output load does not provide rail-to-rail swing and is not available. Rev. 1.01 Page 7 of 12 www.sitime.com SiT8925 High Frequency, Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Pin 1 Configuration Options (OE or NC) Pin 1 of the SiT8925 can be factory-programmed to support two modes: Output Enable (OE) or No Connect (NC). These modes can also be programmed with the Time Machine using field programmable devices. In addition, the SiT8925 supports “no runt” pulses and “no glitch” output during startup or when the output driver is re-enabled from the OE disable mode as shown in the waveform captures in Figure 16 and Figure 17. Output Enable (OE) Mode In the OE mode, applying logic low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in