MBRF20150CTC0

MBRF2035CT thru MBRF20200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL 2035 2090 20100 20150 20200 UNIT 2045 2050 2060 2080 CT CT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 80 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 56 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 80 90 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 10 A, TJ=25℃ IF= 10 A, TJ=125℃ IF= 20 A, TJ=25℃ IF= 20 A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR 1 0.5 A 0.80 0.80 0.80 0.85 0.95 0.57 0.70 0.65 0.75 0.85 0.84 0.95 1.00 0.95 1.05 0.72 0.85 0.75 0.85 0.95 5 2 0.1 15 10 30 V mA Voltage rate of change (Rated VR) dV/dt 10000 V/μs Isolation voltage from terminals to heatsink with t=1.0 min VAC 1500 V Typical thermal resistance RθJC Operating junction temperature range Storage temperature range 1.5 3.5 O C/W TJ - 55 to +150 O C TSTG - 55 to +150 O C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: D1308017 Version: N13 MBRF2035CT thru MBRF20200CT Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED MBRF20xxCT (Note 1) PACKAGE PACKING ITO-220AB 50 / Tube CODE Prefix "H" C0 Suffix "G" Note 1: "xx" defines voltage from 35V (MBRF2035CT) to 200V (MBRF20200CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBRF2060CT C0 MBRF2060CT C0 MBRF2060CT C0G MBRF2060CT C0 MBRF2060CTHC0 MBRF2060CT GREEN PACKING CODE QUALIFIED H DESCRIPTION COMPOUND G Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 25 AVERAGE FORWARD A CURRENT (A) 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 50 60 70 80 90 100 110 120 130 140 150 PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 25 0 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 TJ=125℃ MBRF2035CT - 2045CT 1 MBRF2050CT - 2080CT MBRF2090CT - 20100CT MBRF20150CT - 20200CT 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: D1308017 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse Width=300μs 1% Duty Cycle 10 100 NUMBER OF CYCLES AT 60 Hz 10 1 TJ=75℃ 0.1 TJ=25℃ 0.01 MBRF2035CT - 2045CT MBRF2050CT - 20200CT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: N13 MBRF2035CT thru MBRF20200CT Taiwan Semiconductor 10000 100 f=1.0MHz Vsig=50mVp-p MBRF2035CT - 2045CT MBRF2050CT - 20200CT TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 1000 100 0.1 1 10 100 10 1 0.1 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.95 1.45 0.037 0.057 I 0.50 0.90 0.020 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM Document Number: D1308017 P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Version: N13 MBRF2035CT thru MBRF20200CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: D1308017 Version: N13