VP0808L-G

VP0808 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description • • • • • • • The VP0808 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-Drain Diode High Input Impedance and High Gain Applications • • • • • • Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Motor Controls Converters Amplifiers Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Package Type 3-lead TO-92 (Top view) DRAIN SOURCE GATE See Table 2-1 for pin information.  2022 Microchip Technology Inc. and its subsidiaries DS20006004A-page 1 VP0808 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage ...................................................................................................................................... BVDSS Drain-to-Gate Voltage ......................................................................................................................................... BVDGS Gate-to-Source Voltage ......................................................................................................................................... ±30V Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C Storage Temperature, TS ..................................................................................................................... –55°C to +150°C † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle Parameter Sym. Min. Drain-to-Source Breakdown Voltage BVDSS –80 — — V Gate Threshold Voltage VGS(th) –1 — –4.5 V VGS = VDS, ID = –1 mA Gate Body Leakage Current Zero-Gate Voltage Drain Current On-State Drain Current Static Drain-to-Source On-State Resistance Note 1: Typ. Max. Unit Conditions VGS = 0V, ID = –10 µA — — –100 nA VGS = ±20V, VDS = 0V (Note 1) — — –10 µA VGS = 0V, VDS = Maximum rating — — –500 µA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) ID(ON) –1.1 — — A VGS = –10V, VDS = –15V RDS(ON) — — 5 Ω VGS = –10V, ID = –1A IGSS IDSS Specification is obtained by characterization and is not 100% tested. AC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested. Parameter Sym. Min. Forward Transconductance GFS 200 — — Input Capacitance CISS — — 150 pF Common-Source Output Capacitance COSS — — 60 pF Reverse Transfer Capacitance CRSS — — 25 pF Turn-On Delay Time td(ON) — — 15 ns tr — — 40 ns td(OFF) — — 30 ns tf — — 30 ns VSD — –1.2 — V Rise Time Turn-Off Delay Time Fall Time DIODE PARAMETER Diode Forward Voltage Drop Note 1: Typ. Max. Unit Conditions mmho VDS = –10V, ID = –500 mA VGS = 0V, VDS = –25V, f = 1 MHz VDD = –25V, ID = –500 mA, RGEN = 25Ω VGS = 0V, ISD = –900 mA (Note 1) Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty cycle DS20006004A-page 2  2022 Microchip Technology Inc. and its subsidiaries VP0808 TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C JA — 132 — °C/W Conditions TEMPERATURE RANGE PACKAGE THERMAL RESISTANCE 3-lead TO-92 THERMAL CHARACTERISTICS Package 3-lead TO-92 Note 1: ID (Note 1) (Continuous) (mA) ID (Pulsed) (A) Power Dissipation at TA = 25°C (W) IDR (Note 1) (mA) IDRM (A) –280 –3 1 –280 –3 ID (continuous) is limited by maximum rated TJ.  2022 Microchip Technology Inc. and its subsidiaries DS20006004A-page 3 VP0808 2.0 PIN DESCRIPTION The details on the pins of VP0808 are listed in Table 2-1. Refer to Package Type for the location of pins. TABLE 2-1: PIN FUNCTION TABLE Pin Number Pin Name 1 Source 2 Gate Gate 3 Drain Drain DS20006004A-page 4 Description Source  2022 Microchip Technology Inc. and its subsidiaries VP0808 3.0 FUNCTIONAL DESCRIPTION Figure 3-1 illustrates the switching waveforms and test circuit for VP0808. 0V INPUT Pulse Generator 10% -10V td(ON) RGEN 90% t(OFF) t(ON) tr td(OFF) D.U.T. tf INPUT 0V 90% OUTPUT 10% VDD FIGURE 3-1: TABLE 3-1: OUTPUT RL 90% 10% VDD Switching Waveforms and Test Circuit. PRODUCT SUMMARY BVDSS/BVDGS (V) RDS(ON) (Maximum) (Ω) ID(ON) (Minimum) (A) –80 5 –1.1  2022 Microchip Technology Inc. and its subsidiaries DS20006004A-page 5 VP0808 4.0 PACKAGING INFORMATION 4.1 Package Marking Information Legend: XX...X Y YY WW NNN e3 * Note: DS20006004A-page 6 3-lead TO-92 Example XXXXXX X e3 YWWNNN VP0808 L e3 232476 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2022 Microchip Technology Inc. and its subsidiaries VP0808 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.  2022 Microchip Technology Inc. and its subsidiaries DS20006004A-page 7 VP0808 NOTES: DS20006004A-page 8  2022 Microchip Technology Inc. and its subsidiaries VP0808 APPENDIX A: REVISION HISTORY Revision A (April 2022) • Converted Supertex Doc# DSFP-VP0808 to Microchip DS20006004A • Changed the package marking format • Removed the 3-Lead TO-92 L P002, P003, P005, P013, and P014 media types to align packaging specifications with the actual BQM • Added some sections to comply with the standard Microchip format • Made minor text changes throughout the document  2022 Microchip Technology Inc. and its subsidiaries DS20006004A-page 9 VP0808 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. XX PART NO. - Package Options Device X - Environmental X Media Type Device: VP0808 = P-Channel Enhancement-Mode Vertical DMOS FET Package: L = 3-lead TO-92 Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 1000/Bag for an L Package DS20006004A-page 10 Example: a) VP0808L-G: P-Channel EnhancementMode, Vertical DMOS FET, 3-lead TO-92, 1000/Bag  2022 Microchip Technology Inc. and its subsidiaries Note the following details of the code protection feature on Microchip products: • Microchip products meet the specifications contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and under normal conditions. • Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products. This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this information in any other manner violates these terms. Information regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. 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Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, QuietWire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, Symmcom, and Trusted Time are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2022, Microchip Technology Incorporated and its subsidiaries. All Rights Reserved. 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