ADF4360-8BCPRL

Integrated Synthesizer and VCO ADF4360-8 FEATURES GENERAL DESCRIPTION Output frequency range: 65 MHz to 400 MHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Integer-N synthesizer Programmable output power level 3-wire serial interface Digital lock detect Hardware and software power-down mode The ADF4360-8 is an integrated integer-N synthesizer and voltage-controlled oscillator (VCO). The ADF4360-8 center frequency is set by external inductors. This allows a frequency range of between 65 MHz to 400 MHz. Control of all the on-chip registers is through a simple 3-wire interface. The device operates with a power supply ranging from 3.0 V to 3.6 V and can be powered down when not in use. APPLICATIONS System clock generation Test equipment Wireless LANs CATV equipment FUNCTIONAL BLOCK DIAGRAM AVDD DVDD RSET CE ADF4360-8 MUXOUT MULTIPLEXER REFIN 14-BIT R COUNTER LOCK DETECT CLK DATA 24-BIT DATA REGISTER LE MUTE 24-BIT FUNCTION LATCH CHARGE PUMP CP PHASE COMPARATOR VVCO VTUNE L1 L2 CC CN RFOUTA VCO CORE 13-BIT B COUNTER OUTPUT STAGE RFOUTB 04763-001 N=B AGND DGND CPGND Figure 1. Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2005 Analog Devices, Inc. All rights reserved. ADF4360-8 TABLE OF CONTENTS Specifications..................................................................................... 3 Output Stage................................................................................ 12 Timing Characteristics ................................................................ 5 Latch Structure ........................................................................... 13 Absolute Maximum Ratings............................................................ 6 Power-Up..................................................................................... 17 Transistor Count........................................................................... 6 Control Latch .............................................................................. 19 ESD Caution.................................................................................. 6 N Counter Latch......................................................................... 20 Pin Configuration and Function Descriptions............................. 7 R Counter Latch ......................................................................... 20 Typical Performance Characteristics ............................................. 8 Applications..................................................................................... 21 Circuit Description......................................................................... 10 Choosing the Correct Inductance Value ................................. 21 Reference Input Section............................................................. 10 Fixed Frequency LO................................................................... 21 N Counter.................................................................................... 10 Interfacing ................................................................................... 22 R Counter .................................................................................... 10 PCB Design Guidelines for Chip Scale Package........................... 22 PFD and Charge Pump.............................................................. 10 Output Matching ........................................................................ 23 MUXOUT and Lock Detect...................................................... 10 Outline Dimensions ....................................................................... 24 Input Shift Register..................................................................... 11 Ordering Guide .......................................................................... 24 VCO.............................................................................................. 11 REVISION HISTORY 01/05 — Rev. 0 to Rev. A Changes to Table 1............................................................................ 3 Changes to Table 2............................................................................ 5 Changes to Figure 20...................................................................... 12 Added Power-Up Section .............................................................. 17 Deleted Power-Up Section ............................................................ 22 Updated Outline Dimensions ....................................................... 24 Changes to Ordering Guide .......................................................... 24 10/04—Revision 0: Initial Version Rev. A | Page 2 of 24 ADF4360-8 SPECIFICATIONS1 AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted. Table 1. Parameter REFIN CHARACTERISTICS REFIN Input Frequency B Version Unit Conditions/Comments 10/250 MHz min/max 0.7/AVDD 0 to AVDD 5.0 ±60 V p-p min/max V max pF max µA max For f < 10 MHz, use a dc-coupled CMOS-compatible square wave, slew rate > 21 V/µs. AC-coupled CMOS-compatible 8 MHz max 2.5 0.312 2.7/10 0.2 2 1.5 2 mA typ mA typ kΩ nA typ % typ % typ % typ 1.5 0.6 ±1 3.0 V min V max µA max pF max DVDD – 0.4 500 0.4 V min µA max V max 3.0/3.6 AVDD AVDD 5 2.5 12.0 3.5 to 11.0 7 V min/V max 400 MHz Minimum VCO Output Frequency VCO Output Frequency 65 88/108 MHz MHz min/max VCO Frequency Range VCO Sensitivity 1.2 2 Ratio MHz/V typ Lock Time6 Frequency Pushing (Open Loop) Frequency Pulling (Open Loop) Harmonic Content (Second) 400 0.24 10 −16 µs typ MHz/V typ Hz typ dBc typ REFIN Input Sensitivity REFIN Input Capacitance REFIN Input Current PHASE DETECTOR Phase Detector Frequency2 CHARGE PUMP ICP Sink/Source3 High Value Low Value RSET Range ICP Three-State Leakage Current Sink and Source Current Matching ICP vs. VCP ICP vs. Temperature LOGIC INPUTS VINH, Input High Voltage VINL, Input Low Voltage IINH/IINL, Input Current CIN, Input Capacitance LOGIC OUTPUTS VOH, Output High Voltage IOH, Output High Current VOL, Output Low Voltage POWER SUPPLIES AVDD DVDD VVCO AIDD4 DIDD4 IVCO4, 5 IRFOUT4 Low Power Sleep Mode4 RF OUTPUT CHARACTERISTICS5 Maximum VCO Output Frequency With RSET = 4.7 kΩ 1.25 V ≤ VCP ≤ 2.5 V 1.25 V ≤ VCP ≤ 2.5 V VCP = 2.0 V CMOS output chosen IOL = 500 µA mA typ mA typ mA typ mA typ µA typ ICORE = 5 mA RF output stage is programmable ICORE = 5 mA. Depending on L. See the Choosing the Correct Inductance Value section. L1, L2 = 270 nH. See the Choosing the Correct Inductance Value section for other frequency values. FMAX / FMIN L1, L2 = 270 nH. See the Choosing the Correct Inductance Value section for other sensitivity values. To within 10 Hz of final frequency Into 2.00 VSWR load Rev. A | Page 3 of 24 ADF4360-8 Parameter Harmonic Content (Third) Output Power5, 7 Output Power5, 8 Output Power Variation VCO Tuning Range NOISE CHARACTERISTICS5 VCO Phase Noise Performance9 Synthesizer Phase Noise Floor10 Phase Noise Figure of Merit10 In-Band Phase Noise11, 12 RMS Integrated Phase Error13 Spurious Signals due to PFD Frequency12, 14 Level of Unlocked Signal with MTLD Enabled B Version −21 −9/0 −14/−9 ±3 1.25/2.5 Unit dBc typ dBm typ dBm typ dB typ V min/max −120 −139 −140 −142 −160 −150 −142 −215 −102 0.09 −75 dBc/Hz typ dBc/Hz typ dBc/Hz typ dBc/Hz typ dBc/Hz typ dBc/Hz typ dBc/Hz typ dBc/Hz typ dBc/Hz typ Degrees typ dBc typ −70 dBm typ Conditions/Comments Using tuned load, programmable in 3 dB steps; see Table 7 Using 50 Ω resistors to VVCO, programmable in 3 dB steps; see Table 7 @ 100 kHz offset from carrier @ 800 kHz offset from carrier @ 3 MHz offset from carrier @ 10 MHz offset from carrier @ 200 kHz PFD frequency @ 1 MHz PFD frequency @ 8 MHz PFD frequency @ 1 kHz offset from carrier 100 Hz to 100 kHz 1 Operating temperature range is –40°C to +85°C. Guaranteed by design. Sample tested to ensure compliance. 3 ICP is internally modified to maintain constant loop gain over the frequency range. 4 TA = 25°C; AVDD = DVDD = VVCO = 3.3 V. 5 Unless otherwise stated, these characteristics are guaranteed for VCO core power = 5 mA. L1, L2 = 270 nH, 470 Ω resistors to GND in parallel with L1, L2. 6 Jumping from 88 MHz to 108 MHz. PFD frequency = 200 kHz; loop bandwidth = 10 kHz. 7 For more detail on using tuned loads, see the Output Matching section. 8 Using 50 Ω resistors to VVCO, into a 50 Ω load. 9 The noise of the VCO is measured in open-loop conditions. 10 The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider value). The phase noise figure of merit subtracts 10 log (PFD frequency). 11 The phase noise is measured with the EVAL-ADF4360-xEB1 Evaluation Board and the HP 8562E Spectrum Analyzer. The Spectrum Analyzer provides the REFIN for the synthesizer; offset frequency = 1 kHz. 12 fREFIN = 10 MHz; fPFD = 200 kHz; N = 1000; loop B/W = 10 kHz. 13 fREFIN = 10 MHz; fPFD = 1 MHz; N = 120; loop B/W = 100 kHz. 14 The spurious signals are measured with the EVAL-ADF4360-xEB1 Evaluation Board and the HP 8562E Spectrum Analyzer. The Spectrum Analyzer provides the REFIN for the synthesizer; fREFOUT = 10 MHz @ 0 dBm. 2 Rev. A | Page 4 of 24 ADF4360-8 TIMING CHARACTERISTICS1 AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; 1.8 V and 3 V logic levels used; TA = TMIN to TMAX, unless otherwise noted. Table 2. Parameter t1 t2 t3 t4 t5 t6 t7 Unit ns min ns min ns min ns min ns min ns min ns min Test Conditions/Comments LE setup time DATA to CLOCK setup time DATA to CLOCK hold time CLOCK high duration CLOCK low duration CLOCK to LE setup time LE pulse width Refer to the Power-Up section for the recommended power-up procedure for this device. t4 t5 CLOCK t2 DATA DB23 (MSB) t3 DB22 DB2 DB1 (CONTROL BIT C2) DB0 (LSB) (CONTROL BIT C1) t7 LE t1 t6 04763-002 1 Limit at TMIN to TMAX (B Version) 20 10 10 25 25 10 20 LE Figure 2. Timing Diagram Rev. A | Page 5 of 24 ADF4360-8 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter AVDD to GND1 AVDD to DVDD VVCO to GND VVCO to AVDD Digital I/O Voltage to GND Analog I/O Voltage to GND REFIN to GND Operating Temperature Range Storage Temperature Range Maximum Junction Temperature CSP θJA Thermal Impedance Paddle Soldered Paddle Not Soldered Lead Temperature, Soldering Vapor Phase (60 sec) Infrared (15 sec) 1 Rating −0.3 V to +3.9 V −0.3 V to +0.3 V −0.3 V to +3.9 V −0.3 V to +0.3 V −0.3 V to VDD + 0.3 V −0.3 V to VDD + 0.3 V −0.3 V to VDD + 0.3 V −40°C to + 85°C −65°C to +150°C 150°C 50°C/W 88°C/W Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. This device is a high performance RF integrated circuit with an ESD rating of