a
FEATURES
1.8 V to 5.5 V Single Supply
Low On Resistance (2.5 Typ)
Low On-Resistance Flatness (0.5 )
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
20-Lead 4 mm 4 mm Chip Scale Package
Fast Switching Times
t ON = 16 ns
t OFF = 10 ns
Typical Power Consumption (< 0.01 W)
TTL/CMOS Compatible
For Functionally Equivalent Devices in 16-Lead TSSOP
and SOIC Packages, See ADG711/ADG712/ADG713
2.5 Quad SPST Switches
in Chip Scale Package
ADG781/ADG782/ADG783
FUNCTIONAL BLOCK DIAGRAMS
S1
IN1
IN1
D1
D1
S2
S2
IN2
IN2
ADG782
S3
IN3
S2
D2
D2
S3
IN3
D3
D3
S4
S4
IN4
D4
ADG783
S3
IN3
IN4
D1
IN2
D2
ADG781
S1
S1
IN1
D3
S4
IN4
D4
D4
SWITCHES SHOWN FOR A LOGIC “1” INPUT
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG781, ADG782, and ADG783 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation and high switching speed, low on
resistance, low leakage currents and high bandwidth.
1. 20-Lead 4 mm ⫻ 4 mm Chip Scale Package (CSP).
They are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery powered instruments
and with the new generation of DACs and ADCs from Analog
Devices. Fast switching times and high bandwidth make the
part suitable for video signal switching.
3. Very Low RON (4.5 Ω max at 5 V, 8 Ω max at 3 V). At supply
voltage of 1.8 V, RON is typically 35 Ω over the temperature
range.
The ADG781, ADG782, and ADG783 contain four independent
single-pole/single throw (SPST) switches. The ADG781 and
ADG782 differ only in that the digital control logic is inverted.
The ADG781 switches are turned on with a logic low on the
appropriate control input, while a logic high is required to turn
on the switches of the ADG782. The ADG783 contains two
switches whose digital control logic is similar to the ADG781,
while the logic is inverted on the other two switches.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG781,
ADG782, and ADG783 offer high performance and are
fully specified and guaranteed with 3 V and 5 V supply
rails.
4. Low On-Resistance Flatness.
5. –3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. Fast tON/tOFF.
8. Break-Before-Make Switching. This prevents channel shorting
when the switches are configured as a multiplexer (ADG783
only).
Each switch conducts equally well in both directions when ON.
The ADG783 exhibits break-before-make switching action.
The ADG781/ADG782/ADG783 are available in 20-lead chip
scale packages.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
ADG781/ADG782/ADG783–SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On-Resistance Match Between
Channels (∆RON)
On-Resistance Flatness (RFLAT(ON))
B Version
–40C to
+25C
+85C
0 V to VDD
2.5
4
4.5
0.05
0.4
0.5
1.0
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
11
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Test Conditions/Comments
VS = 0 V to VDD, IS = –10 mA;
Test Circuit 1
VS = 0 V to VDD, IS = –10 mA
VS = 0 V to VDD, IS = –10 mA
VDD = 5.5 V;
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 1 V, or 4.5 V;
Test Circuit 3
± 0.2
nA typ
nA max
nA typ
nA max
nA typ
nA max
2.4
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS1 = VS2 = 3 V; Test Circuit 5
VS = 2 V; RS = 0 Ω, CL = 1 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 10 MHz;
Test Circuit 8
RL = 50 Ω, CL = 5 pF; Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
± 0.2
± 0.2
tOFF
6
Break-Before-Make Time Delay, tD
(ADG783 Only)
Charge Injection
6
3
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
–58
–78
dB typ
dB typ
Channel-to-Channel Crosstalk
–90
dB typ
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
200
10
10
22
MHz typ
pF typ
pF typ
pF typ
0.001
µA typ
µA max
16
10
POWER REQUIREMENTS
IDD
(VDD = 5 V 10%, GND = 0 V. All specifications
–40C to +85C unless otherwise noted.)
1
1.0
VDD = 5.5 V
Digital Inputs = 0 V or 5.5 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG781/ADG782/ADG783
SPECIFICATIONS1
(VDD = 3 V 10%, GND = 0 V. All specifications –40C to +85C unless otherwise noted.)
Parameter
B Version
–40C to
+25C
+85C
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
5
On-Resistance Match Between
Channels (∆RON)
On-Resistance Flatness (RFLAT(ON))
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
0 V to VDD
5.5
10
VS = 0 V to VDD, IS = –10 mA
± 0.2
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = 3.3 V;
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = VD = 1 V, or 3 V;
Test Circuit 3
2.0
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF,
VS = 2 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS = 2 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS1 = VS2 = 2 V; Test Circuit 5
VS = 1.5 V; RS = 0 Ω, CL = 1 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 10 MHz;
Test Circuit 8
RL = 50 Ω, CL = 5 pF; Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
0.5
2.5
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
13
± 0.2
± 0.2
tOFF
7
Break-Before-Make Time Delay, tD
(ADG783 Only)
Charge Injection
7
3
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
–58
–78
dB typ
dB typ
Channel-to-Channel Crosstalk
–90
dB typ
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
200
10
10
22
MHz typ
pF typ
pF typ
pF typ
0.001
µA typ
µA max
20
12
POWER REQUIREMENTS
IDD
1
1.0
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
0.1
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
Unit
–3–
VS = 0 V to VDD, IS = –10 mA;
Test Circuit 1
VS = 0 V to VDD, IS = –10 mA
VDD = 3.3 V
Digital Inputs = 0 V or 3.3 V
ADG781/ADG782/ADG783
ABSOLUTE MAXIMUM RATINGS 1
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C
IR Reflow (