a
FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance (2.5 Typ) Low On-Resistance Flatness (0.5 ) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm 4 mm Chip Scale Package Fast Switching Times t ON = 16 ns t OFF = 10 ns Typical Power Consumption (< 0.01 W) TTL/CMOS Compatible For Functionally Equivalent Devices in 16-Lead TSSOP and SOIC Packages, See ADG711/ADG712/ADG713 APPLICATIONS Battery Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement
IN1 IN2
2.5
Quad SPST Switches in Chip Scale Package ADG781/ADG782/ADG783
FUNCTIONAL BLOCK DIAGRAMS
S1
IN1 S1
IN1 S1 D1 S2 IN2 D2 S3 D3 S4 IN4 D4
D1 S2
IN2
D1 S2 D2 S3
IN3
D2
ADG781
IN3
S3
IN3
ADG782
ADG783
D3 S4 IN4 D4
IN4
D3 S4 D4
SWITCHES SHOWN FOR A LOGIC “1” INPUT
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG781, ADG782, and ADG783 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation and high switching speed, low on resistance, low leakage currents and high bandwidth. They are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery powered instruments and with the new generation of DACs and ADCs from Analog Devices. Fast switching times and high bandwidth make the part suitable for video signal switching. The ADG781, ADG782, and ADG783 contain four independent single-pole/single throw (SPST) switches. The ADG781 and ADG782 differ only in that the digital control logic is inverted. The ADG781 switches are turned on with a logic low on the appropriate control input, while a logic high is required to turn on the switches of the ADG782. The ADG783 contains two switches whose digital control logic is similar to the ADG781, while the logic is inverted on the other two switches. Each switch conducts equally well in both directions when ON. The ADG783 exhibits break-before-make switching action. The ADG781/ADG782/ADG783 are available in 20-lead chip scale packages.
1. 20-Lead 4 mm
4 mm Chip Scale Package (CSP).
2. 1.8 V to 5.5 V Single Supply Operation. The ADG781, ADG782, and ADG783 offer high performance and are fully specified and guaranteed with 3 V and 5 V supply rails. 3. Very Low RON (4.5 Ω max at 5 V, 8 Ω max at 3 V). At supply voltage of 1.8 V, RON is typically 35 Ω over the temperature range. 4. Low On-Resistance Flatness. 5. –3 dB Bandwidth >200 MHz. 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. Fast tON/tOFF. 8. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer (ADG783 only).
R EV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
ADG781/ADG782/ADG783–SPECIFICATIONS
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (∆RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD (ADG783 Only) Charge Injection Off Isolation B Version –40 C to +25 C +85 C 0 V to VDD 2.5 4 4.5 0.05 0.4 1.0 ± 0.01 ± 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1 Unit V Ω typ Ω max Ω typ Ω max Ω typ Ω max nA typ nA max nA typ nA max nA typ nA max V min V max µA typ µA max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ µA typ µA max
(VDD = 5 V 10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
Test Conditions/Comments
VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = 5.5 V; VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or 4.5 V; Test Circuit 3
0.5
± 0.2 ± 0.2 ± 0.2 2.4 0.8
0.005 ± 0.1 11 16 6 10 6 1 3 –58 –78 –90 200 10 10 22 0.001 1.0
VIN = VINL or VINH
Channel-to-Channel Crosstalk Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
RL = 300 Ω, CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 VS = 2 V; RS = 0 Ω, CL = 1 nF; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF, f = 10 MHz; Test Circuit 8 RL = 50 Ω, CL = 5 pF; Test Circuit 9 f = 1 MHz f = 1 MHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5.5 V
NOTES 1 Temperature ranges are as follows: B Version: –40 °C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
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ADG781/ADG782/ADG783
SPECIFICATIONS1
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON)
(VDD = 3 V
10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
B Version –40 C to +25 C +85 C 0 V to VDD 5.5 10 0.5 2.5
Unit V Ω typ Ω max Ω typ Ω max Ω typ nA typ nA max nA typ nA max nA typ nA max V min V max µA typ µA max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ µA typ µA max
Test Conditions/Comments
5 0.1
On-Resistance Match Between Channels (∆RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD (ADG783 Only) Charge Injection Off Isolation
VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = 3.3 V; VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V, or 3 V; Test Circuit 3
± 0.01 ± 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1
± 0.2 ± 0.2 ± 0.2 2.0 0.8
0.005 ± 0.1 13 20 7 12 7 1 3 –58 –78 –90 200 10 10 22 0.001 1.0
VIN = VINL or VINH
Channel-to-Channel Crosstalk Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
RL = 300 Ω, CL = 35 pF, VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 2 V; Test Circuit 5 VS = 1.5 V; RS = 0 Ω, CL = 1 nF; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF, f = 10 MHz; Test Circuit 8 RL = 50 Ω, CL = 5 pF; Test Circuit 9 f = 1 MHz f = 1 MHz f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or 3.3 V
NOTES 1 Temperature ranges are as follows: B Version: –40 °C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
REV. A
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ADG781/ADG782/ADG783
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25°C unless otherwise noted.)
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C IR Reflow (