APT6013JFLL_04

APT6013JFLL 600V 39A 0.130Ω POWER MOS MOS REDFET POWER 7 F 7 R TM S G D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 ® SO 2 T- 27 "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT6013JFLL UNIT Volts Amps 600 39 156 ±30 ±40 460 3.68 -55 to 150 300 39 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.130 250 1000 ±100 3 5 (VGS = 10V, ID = 19.5A) Ohms µA nA Volts 8-2004 050-7070 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT6013JFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 39A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 39A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 39A, RG = 5Ω ID = 39A, RG = 5Ω RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 5630 1060 70 130 25 40 11 13 27 9 575 530 935 630 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 39 156 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -39A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -39A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -39A, di/dt = 100A/µs) Peak Recovery Current (IS = -39A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 250 500 2.27 6.87 14 22 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.30 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 3.29mH, RG = 25Ω, Peak IL = 39A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID39A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 0.20 0.15 0.10 0.05 0 0.9 0.7 0.5 Note: 0.3 PDM t1 t2 050-7070 Rev B 8-2004 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves 120 Junction temp. (°C) RC MODEL APT6013JFLL VGS =15 &10V 8V 0.0260 0.0012F ID, DRAIN CURRENT (AMPERES) 100 80 60 40 7V Power (watts) 0.0584 0.0354F 6.5V 0.185 Case temperature. (°C) 0.463F 6V 20 0 5.5V 5V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 140 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @