APTM50UM13S-ALN

APTM50UM13S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 500V RDSon = 13mΩ max @ Tj = 25°C ID = 335A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile S Q1 G S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50UM13S-AlN Rev 0 July, 2004 Max ratings 500 335 250 1340 ±30 13 3290 71 50 3000 Unit V A V mΩ W A APTM50UM13S-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 1 mA Min 500 Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 167.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0 V VGS = 0V,VDS = 500V Typ Max 400 2000 13 5 ±300 Unit V µA mΩ V nA 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID =335A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 335A R G = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 335A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 335A, R G =0.8 Ω Min Typ 42.2 8.24 0.42 800 200 420 21 42 96 100 4 4.16 6.32 4.64 Max Unit nF nC ns mJ mJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 125°C Tj = 25°C Tj = 125°C 60 240 1000 ns nC APT website – http://www.advancedpower.com 2–6 APTM50UM13S-AlN Rev 0 July, 2004 Test Conditions 50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 133V di/dt = 800A/µs IF = 240A VR = 133V di/dt = 800A/µs Min T c = 85°C Tj = 125°C Tj = 25°C Typ 240 1.1 1.4 0.9 31 Max 1.15 Unit A V APTM50UM13S-AlN Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 360A IF = 720A IF = 360A IF = 360A VR = 400V di/dt = 1000A/µs IF = 360A VR = 400V di/dt = 1000A/µs Min T c = 70°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 360 1.6 1.9 1.4 130 170 1.32 5.5 Max 1.8 Unit A V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode Min Typ Max 0.038 0.23 0.16 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 600 400 6V 200 0 0 5.5V 5V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current TJ=25°C TJ=125°C 1 2 3 4 5 TJ=-55°C 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 350 ID, DC Drain Current (A) 720 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 Normalized to VGS=10V @ 167.5A 300 250 200 150 100 50 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM50UM13S-AlN Rev 0 July, 2004 VGS=10V VGS=20V 120 240 360 480 600 I D, Drain Current (A) APT website – http://www.advancedpower.com 4–6 APTM50UM13S-AlN RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000 I D, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID=167.5A 1000 limited by RDSon 100 us 1 ms 100 10 Single pulse TJ=150°C 1 10 ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) APTM50UM13S-AlN Rev 0 July, 2004 I D=335A TJ =25°C VDS=100V V DS =250V VDS=400V 10000 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM50UM13S-AlN Delay Times vs Current 110 90 70 50 30 10 60 140 220 300 380 460 I D, Drain Current (A) 540 td(on) 160 VDS=333V RG=0.8Ω TJ=125°C L=100µH Rise and Fall times vs Current tf td(on) and t d(off) (ns) t r and tf (ns) VDS=333V RG=0.8Ω TJ=125°C L=100µH td(off) 120 80 tr 40 0 60 140 220 300 380 460 ID, Drain Current (A) 540 Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 60 140 220 300 380 460 I D, Drain Current (A) 540 Eon Switching Energy (mJ) V DS=333V RG=0.8Ω T J=125°C L=100µH Switching Energy vs Gate Resistance 24 20 16 12 8 4 0 2 4 6 8 10 12 14 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ =150°C 100 TJ =25°C Eon VDS=333V ID=335A T J=125°C L=100µH Eoff Eoff Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 400 Frequency (kHz) 300 ZCS 200 100 VDS=333V D=50% RG=0.8Ω TJ=125°C TC=75°C ZVS Hard switching 10 0 50 100 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM50UM13S-AlN Rev 0 July, 2004 150 200 250 300 I D, Drain Current (A) 350 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6