APTM50UM25S

APTM50UM25S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 500V RDSon = 25mΩ max @ Tj = 25°C ID = 149A @ Tc = 25°C Applicatio n • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 Features G • • • • Benefits • • • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50UM25S – Rev 1 June, 2004 Tc = 25°C Max ratings 500 149 110 550 ±30 25 1250 41 50 1600 Unit V A V mΩ W A APTM50UM25S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0 V, ID = 500µA Min 500 VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Tj = 25°C Tj = 125°C Typ Max 400 1000 25 5 ±200 Unit V µA mΩ V nA Unit nF VGS = 10V, ID = 74.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 149A Inductive Switching @ 125°C VGS = 15V VBus = 333V ID = 149A R G = 1.2Ω 3 Dynamic Characteristics Min Typ 17.5 3.6 0.24 364 96 196 15 21 73 52 Max nC ns Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/µs IF = 100A VR = 400V di/dt = 200A/µs Min Tc = 85°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Tc = 80°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 Unit A V ns nC Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge 180 220 390 1450 ns nC APT website – http://www.advancedpower.com 2–6 APTM50UM25S – Rev 1 June, 2004 Typ 100 1.6 1.9 1.4 Max 1.8 Unit A V APTM50UM25S Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode 2500 -40 -40 -40 3 Min Typ Max 0.1 0.46 0.6 150 125 100 1.2 5 400 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 VGS=10V 120 80 VGS=20V 40 0 80 160 240 320 25 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APT website – http://www.advancedpower.com 4–6 APTM50UM25S – Rev 1 June, 2004 APTM50UM25S RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) 1000 limited by RDSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=74.5A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100µs 100 limited by RDSon 1ms 10 Single pulse TJ =150°C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=149A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 80 160 240 320 400 480 560 Gate Charge (nC) VDS=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 5–6 APTM50UM25S – Rev 1 June, 2004 APTM50UM25S Delay Times vs Current 80 td(off) V DS =333V RG =1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 100 80 t r and tf (ns) 60 40 20 0 tr VDS=333V RG=1.2Ω TJ=125°C L=100µH t d(on) and td(off) (ns) 60 tf 40 20 td(on) 0 40 80 120 160 200 240 ID, Drain Current (A) 280 40 80 120 160 200 240 280 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 Switching Energy (mJ) 8 6 4 2 Eon V DS =333V ID=149A T J=125°C L=100µH Switching Energy vs Current 7.2 Switching Energy (mJ) 6 4.8 3.6 2.4 1.2 0 40 80 120 160 200 240 I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 ID, Drain Current (A) VDS=333V D=50% RG=1.2Ω TJ=125°C VDS=333V RG=1.2Ω TJ=125°C L=100µH Eon Eoff Eoff 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 450 1000 TJ =150°C 100 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50UM25S – Rev 1 June, 2004