AONS21321
30V P-Channel MOSFET
General Description
Product Summary
• Latest Advanced Trench Technology
• Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
ID (at VGS=-10V)
VDS
Applications
-30V
-24A
RDS(ON) (at VGS=-10V)
< 16.5mΩ
RDS(ON) (at VGS=-4.5V)
< 29.5mΩ
100% UIS Tested
100% Rg Tested
• Notebook AC-in Load Switch
• Battery Protection Charge/Discharge
DFN5X6
Top View
Bottom View
Top View
D
1
8
2
7
3
6
4
5
G
PIN1
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AONS21321
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
L=0.1mH
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: November 2017
IAS
25
A
EAS
31
mJ
24.5
Steady-State
Steady-State
W
9.8
5
RθJA
RθJC
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
A
-11
PDSM
Junction and Storage Temperature Range
A
-14
PD
TA=25°C
V
-66
IDSM
TA=70°C
±25
-20
IDM
TA=25°C
Units
V
-24
ID
TC=100°C
Maximum
-30
-55 to 150
Typ
20
45
4.1
www.aosmd.com
Max
25
55
5.1
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AONS21321
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1
TJ=55°C
VGS=-10V, ID=-20A
±100
nA
-1.8
-2.3
V
13.5
16.5
19.5
23.5
29.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-10A
23
gFS
Forward Transconductance
VDS=-5V, ID=-20A
30
VSD
Diode Forward Voltage
IS=-1A, VGS=0V
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
f=1MHz
µA
-5
-1.3
Units
V
VDS=-30V, VGS=0V
IDSS
Max
-0.72
mΩ
mΩ
S
-1
V
-24
A
1180
pF
185
pF
155
pF
5
10
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
21
34
nC
Qg(4.5V)
Total Gate Charge
11
18
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=-10V, VDS=-15V, ID=-20A
nC
6
nC
Gate Drain Charge
3
nC
Turn-On DelayTime
10.5
ns
VGS=-10V, VDS=-15V,
RL=0.75Ω, RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
IF=-20A, di/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/µs
23
Turn-Off Fall Time
8.5
ns
30
ns
11.5
ns
13
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
1E-05 0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5.1°C/W
1
Single Pulse
0.1
PDM
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: November 2017
www.aosmd.com
Page 4 of 6
AONS21321
30
30
24
24
Current rating -ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
12
6
18
12
0
6
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: November 2017
www.aosmd.com
Page 5 of 6
AONS21321
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
VDC
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: November 2017
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
www.aosmd.com
Page 6 of 6
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