AONS66402

AONS66402 40V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 40V 85A RDS(ON) (at VGS=10V) < 1.6mΩ RDS(ON) (at VGS=4.5V) < 2.3mΩ 100% UIS Tested 100% Rg Tested • High Frequency Switching and Synchronous Rectification DFN5x6 D Top View Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AONS66402 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C TA=25°C Continuous Drain Current Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.2.0: September 2019 IAS 52 A EAS 406 mJ 119 AD t ≤ 10s Steady-State Steady-State W 47.5 6.2 RqJA RqJC W 4.0 TJ, TSTG Symbol A A 39 PDSM TA=70°C A 49 PD TA=25°C Power Dissipation A V 340 IDSM Avalanche Current C ±20 85 IDM TA=70°C Units V 85 ID TC=100°C Maximum 40 -55 to 150 Typ 15 40 0.87 www.aosmd.com Max 20 50 1.05 °C Units °C/W °C/W °C/W Page 1 of 6 AONS66402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 40 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.8 2.3 V 1.3 1.6 1.9 2.35 2.3 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 1.8 gFS Forward Transconductance VDS=5V, ID=20A 110 VSD Diode Forward Voltage IS=1A, VGS=0V 0.66 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 5 1.3 VGS=0V, VDS=20V, f=1MHz Units V VDS=40V, VGS=0V IDSS Max mΩ mΩ S 1 V 85 A 5570 pF 1035 pF 75 pF 0.75 1.15 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 75 105 nC Qg(4.5V) Total Gate Charge 33 47 nC Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=20V, ID=20A 0.35 16.5 nC 5 nC VGS=0V, VDS=20V 41 13 nC ns VGS=10V, VDS=20V, RL=1.0W, RGEN=3W 4.5 ns 48 ns 5 ns IF=20A, di/dt=500A/ms 21 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 65 ns nC Body Diode Reverse Recovery Time A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZqJC Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10 10 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=1.05°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: September 2019 www.aosmd.com Page 4 of 6 AONS66402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 120 Current rating ID (A) Power Dissipation (W) 80 100 80 60 40 60 40 20 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 1.5 TA=25°C Power (W) Eoss(uJ) 1000 1 100 0.5 10 0 0 10 20 30 40 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZqJA Normalized Transient Thermal Resistance 0.001 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 RqJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: September 2019 www.aosmd.com Page 5 of 6 AONS66402 Figure A:Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: September 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6