AONS66612
60V N-Channel AlphaSGT TM
General Description
Product Summary
VDS
TM
• Trench Power AlphaSGT technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for Fast-Switching Applications
• RoHS and Halogen-Free Compliant
60V
100A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 1.65mΩ
RDS(ON) (at VGS=6V)
< 2.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC
Converters
• Industrial and Motor Drive applications
DFN5x6
Top View
D
Top View
Bottom View
S
S
S
1
8
D
2
7
3
6
D
D
G
4
5
D
G
PIN1
S
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AONS66612
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
C
Avalanche energy
L=0.3mH
TC=25°C
B
C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2.0: April 2018
IAS
48
A
EAS
346
mJ
208
Steady-State
Steady-State
RθJA
RθJC
W
83
6.2
W
4.0
TJ, TSTG
Symbol
t ≤ 10s
A
37
PDSM
TA=70°C
A
46
PD
TC=100°C
V
400
IDSM
TA=70°C
±20
100
IDM
TA=25°C
Continuous Drain
Current
Power Dissipation
C
Units
V
100
ID
TC=100°C
Maximum
60
-55 to 150
Typ
15
40
0.46
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°C
Max
20
50
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AONS66612
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
60
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
VGS=10V, ID=20A
±100
nA
2.85
3.5
V
1.4
1.65
2.25
2.7
2.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=6V, ID=20A
2.0
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.67
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Qoss
Output Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=20A
VGS=0V, VDS=30V
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
µA
5
2.3
0.4
Units
V
VDS=60V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
100
A
5300
pF
1500
pF
50
pF
0.9
1.4
Ω
78
110
nC
20
nC
20
nC
92
nC
18
ns
10
ns
40
ns
13
ns
IF=20A, di/dt=500A/µs
30
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
135
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.6°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: April 2018
www.aosmd.com
Page 4 of 6
AONS66612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
120
100
Current rating ID (A)
Power Dissipation (W)
200
150
100
50
80
60
40
20
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
4
3
1000
2
Power (W)
Eoss(uJ)
TA=25°C
100
10
1
0
0
20
40
60
1
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H)
VDS (Volts)
Figure 14: Coss stored Energy
ZθJA Normalized Transient
Thermal Resistance
0.001
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=50°C/W
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: April 2018
www.aosmd.com
Page 5 of 6
AONS66612
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: April 2018
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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