DRV594VFP

Actual Size 9mm Square DRV593 DRV594 www.ti.com SLOS401C – OCTOBER 2002 – REVISED JULY 2010 ±3-A HIGH-EFFICIENCY PWM POWER DRIVER Check for Samples: DRV593, DRV594 FEATURES 1 • 2 • • • • • • • • • DESCRIPTION Operation Reduces Output Filter Size and Cost by 50% Compared to DRV591 ±3-A Maximum Output Current Low Supply Voltage Operation: 2.8 V to 5.5 V High Efficiency Generates Less Heat Overcurrent and Thermal Protection Fault Indicators for Overcurrent, Thermal and Undervoltage Conditions Two Selectable Switching Frequencies Internal or External Clock Sync PWM Scheme Optimized for EMI 9×9 mm PowerPAD™ Quad Flatpack Package The DRV593 and DRV594 are high-efficiency, high-current power amplifiers ideal for driving a wide variety of thermoelectric cooler elements in systems powered from 2.8 V to 5.5 V. The operation of the device requires only one inductor and capacitor for the output filter, saving significant printed-circuit board area. Pulse-width modulation (PWM) operation and low output stage on-resistance significantly decrease power dissipation in the amplifier. The DRV593 and DRV594 are internally protected against thermal and current overloads. Logic-level fault indicators signal when the junction temperature has reached approximately 128°C to allow for system-level shutdown before the amplifier's internal thermal shutdown circuitry activates. The fault indicators also signal when an overcurrent event has occurred. If the overcurrent circuitry is tripped, the devices automatically reset (see application information section for more details). APPLICATIONS • • Thermoelectric Cooler (TEC) Driver Laser Diode Biasing The PWM switching frequency may be set to 500 kHz or 100 kHz depending on system requirements. To eliminate external components, the gain is fixed at 2.3 V/V for the DRV593. For the DRV594, the gain is fixed at 14.5 V/V. VDD PWM SHUTDOWN 10 µF H/C FAULT1 FAULT0 PWM PVDD PVDD PVDD FREQ INT/EXT PGND 1 µF H/C Shutdown Control PGND IN− H/C 1 kΩ PGND IN+ H/C 1 kΩ To TEC or Laser Diode Anode PGND DRV593 DRV594 AREF PVDD 1 µF PGND COSC PVDD 220 pF PGND ROSC PVDD DC Control Voltage 10 µH PWM AGND (Connect to PowerPAD) FAULT0 120 kΩ AVDD FAULT1 1 µF PWM 1 µF 10 µF To TEC or Laser Diode Cathode 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2010, Texas Instruments Incorporated DRV593 DRV594 SLOS401C – OCTOBER 2002 – REVISED JULY 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Table 1. ORDERING INFORMATION (1) PowerPAD QUAD FLATPACK (VFP) TA DRV593VFP (2) –40°C to 85°C (1) (2) DRV594VFP (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., DRV593VFPR or DRV594VFPR). ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) DRV593, DRV594 AVDD, PVDD Supply voltage VI Input voltage IO (FAULT0, FAULT1) Output current –0.3 V to 5.5 V –0.3 V to VDD + 0.3 V 1 mA Continuous total power dissipation See Dissipation Rating Table TA Operating free-air temperature range –40°C to 85°C TJ Operating junction temperature range –40°C to 150°C Tstg Storage temperature range –65°C to 165°C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS AVDD, PVDD Supply voltage VIH High-level input voltage FREQ, INT/EXT, SHUTDOWN, COSC VIL Low-level input voltage FREQ, INT/EXT, SHUTDOWN, COSC TA Operating free-air temperature MIN MAX 2.8 5.5 2 –40 UNIT V V 0.8 V 85 °C PACKAGE DISSIPATION RATINGS (1) 2 PACKAGE qJA (1) (°C/W) qJC (°C/W) TA=25°C POWER RATING VFP 29.4 1.2 4.1 W This data was taken using 2 oz trace and copper pad that is soldered directly to a JEDEC standard 4-layer 3 in × 3 in PCB. Submit Documentation Feedback Copyright © 2002–2010, Texas Instruments Incorporated Product Folder Link(s): DRV593 DRV594 DRV593 DRV594 www.ti.com SLOS401C – OCTOBER 2002 – REVISED JULY 2010 ELECTRICAL CHARACTERISTICS over operating free-air temperature range unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX 14 UNIT |VOO| Output offset voltage (measured differentially) VI = VDD/2, IO = 0 A 100 mV |IIH| High-level input current VDD = 5.5V, VI = VDD 1 mA |IIL| Low-level input current VDD = 5.5V, VI = 0 V 1 mA Vn Integrated output noise voltage f =