SN65C3221E, SN75C3221E
SLLS694C – NOVEMBER 2005 – REVISED JULY 2021
3-V to 5.5-V Single-channel RS-232 1-Mbits Line Driver and Receiver
with ±15-kV IEC ESD Protection
1 Features
•
•
•
•
•
•
•
•
ESD Protection for RS-232 pins
– ±15-kV Human-body model (HBM)
– ±8-kV IEC 61000-4-2 Contact discharge
– ±15-kV IEC 61000-4-2 Air-gap discharge
Operate with 3-V to 5.5-V VCC supply
Operate up to 1 Mbit/s
Low Standby Current . . . 1 μA Typical
External capacitors . . . 4 × 0.1 μF
Accepts 5-V logic input with 3.3-V supply
RS-232 Bus-pin esd protection exceeds ±15 kv
using human-body model (HBM)
Auto-powerdown feature automatically disables
drivers for power savings
2 Applications
•
•
•
•
•
•
•
•
•
Industrial PCs
Wired networking
Data center and enterprise computing
Battery-powered systems
PDAs
Notebooks
Laptops
Palmtop PCs
Hand-held equipment
3-V to 5.5-V supply. These devices operate at data
signaling rates up to 1 Mbit/s and a driver output slew
rate of 24 V/μs to 150 V/μs.
Flexible control options for power management are
available when the serial port is inactive. The autopowerdown feature functions when FORCEON is
low and FORCEOFF is high. During this mode of
operation, if the devices do not sense a valid RS-232
signal on the receiver input, the driver output is
disabled. If FORCEOFF is set low and EN is high,
both the driver and receiver are shut off, and the
supply current is reduced to 1 μA. Disconnecting
the serial port or turning off the peripheral drivers
causes the auto-powerdown condition to occur. Autopowerdown can be disabled when FORCEON and
FORCEOFF are high. With auto-powerdown enabled,
the device is activated automatically when a valid
signal is applied to the receiver input. The INVALID
output notifies the user if an RS-232 signal is present
at the receiver input. INVALID is high (valid data) if
the receiver input voltage is greater than 2.7 V or less
than –2.7 V, or has been between –0.3 V and 0.3 V
for less than 30 μs. INVALID is low (invalid data) if
the receiver input voltage is between –0.3 V and 0.3 V
for more than 30 μs. See Figure 8-5 for receiver input
levels.
3 Description
Device Information
The SN65C3221E and SN75C3221E consist of one
line driver, one line receiver, and a dual charge-pump
circuit with ±15-kV IEC ESD protection pin to pin
(serial-port connection pins, including GND). These
devices provide the electrical interface between
an asynchronous communication controller and the
serial-port connector. The charge pump and four small
external capacitors allow operation from a single
spacer
DIN
FORCEOFF
FORCEON
ROUT
PART NUMBER
SNx5C3221E
(1)
PACKAGE(1)
BODY SIZE (NOM)
SSOP (DB) 16
6.20 mm x 5.30 mm
TSSOP (DW) 16
10.3 mm x 7.50 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
13
11
DOUT
16
12
Auto-powerdown
10
8
9
1
INVALID
RIN
EN
Logic Diagram (Positive Logic)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN65C3221E, SN75C3221E
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SLLS694C – NOVEMBER 2005 – REVISED JULY 2021
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 5
7.1 Absolute Maximum Ratings........................................ 5
7.2 ESD Ratings............................................................... 5
7.3 ESD Ratings - IEC Specifications............................... 5
7.4 Recommended Operating Conditions.........................6
7.5 Thermal Information....................................................6
7.6 Electrical Characteristics.............................................7
7.7 Driver Section: Electrical Characteristics.................... 7
7.8 Switching Characteristics: Driver................................ 7
7.9 Receiver Section: Electrical Characteristics............... 8
7.10 Switching Characteristics: Receiver..........................8
7.11 Auto-powerdown Section: Electrical
Characteristics...............................................................9
7.12 Switching Characteristics: Auto-powerdown.............9
8 Parameter Measurement Information.......................... 10
9 Detailed Description......................................................13
9.1 Device Functional Modes..........................................13
10 Application and Implementation................................ 14
10.1 Application Information........................................... 14
11 Device and Documentation Support..........................15
11.1 Receiving Notification of Documentation Updates.. 15
11.2 Support Resources................................................. 15
11.3 Trademarks............................................................. 15
11.4 Electrostatic Discharge Caution.............................. 15
11.5 Glossary.................................................................. 15
12 Mechanical, Packaging, and Orderable
Information.................................................................... 15
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (April 2009) to Revision C (July 2021)
Page
• Changed the Applications list............................................................................................................................. 1
• Deleted the Ordering Information table...............................................................................................................1
• Added the Device Information table....................................................................................................................1
• Added the Pin Configuration and Functions ...................................................................................................... 4
• Removed the thermal information from Absolute Maximum Ratingstable and moved the thermal information
to its own table....................................................................................................................................................5
• Added a table note for PW package of SN65C3221E regarding the minimum capacitance in ESD Ratings IEC Specifications table......................................................................................................................................5
• Changed thermal information for PW package of SN65C3221E. Added additional thermal information for
other packages................................................................................................................................................... 6
• Added the Detailed Desctipiton section............................................................................................................ 13
2
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SLLS694C – NOVEMBER 2005 – REVISED JULY 2021
5 Device Comparison Table
Table 5-1. 1-Mbit/s RS-232 Parts
DRIVER
NO.
RECEIVER
NO.
ESD
SUPPLY
VCC
(V)
FEATURE
PIN/PACKAGE
SN65C3221E
1
1
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN65C3232E
2
2
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
MAX3227I
1
1
±8-kV Air-Gap,
±8-k V Contact,
±15-kV HBM
3.3 or 5
Auto powerdown plus,
ready signal
16-pin SSOP
SN65C3221
1
1
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN65C3223
2
2
±15-kV HBM
3.3 or 5
Auto powerdown,
enable signal
20-pin SOIC,
SSOP, TSSOP
SN65C3222
2
2
±15-kV HBM
3.3 or 5
Enable,
powerdown signal
20-pin SOIC,
SSOP, TSSOP
SN65C3232
2
2
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
SN65C3238
5
3
±15-kV HBM
3.3 or 5
Auto powerdown plus
28-pin SOIC,
SSOP, TSSOP
SN65C3243
3
5
±15-kV HBM
3.3 or 5
Auto powerdown
28-pin SOIC,
SSOP, TSSOP
SN75C3221E
1
1
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN75C3232E
2
2
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
MAX3227C
1
1
±8-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Auto powerdown plus,
ready signal
16-pin SSOP
SN75C3221
1
1
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN75C3223
2
2
±15-kV HBM
3.5 or 5
Auto powerdown,
enable signal
20-pin SOIC,
SSOP, TSSOP
SN75C3222
2
2
±15-kV HBM
3.3 or 5
Enable,
powerdown signal
20-pin SOIC,
SSOP, TSSOP
SN75C3232
2
2
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
SN75C3238
5
3
±15-kV HBM
3.3 or 5
Auto powerdown plus
28-pin SOIC,
SSOP, TSSOP
SN75C3243
3
5
±15-kV HBM
3.3 or 5
Auto powerdown
28-pin SOIC,
SSOP, TSSOP
PART
NO.
TEMPERATURE
RANGE
–40°C to 85°C
0°C to 70°C
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SLLS694C – NOVEMBER 2005 – REVISED JULY 2021
6 Pin Configuration and Functions
Figure 6-1. DB or PW Package
Top View
Table 6-1. Pin Configurations
PIN
NAME
4
DESCRIPTION
NO
I/O
EN
1
I
C1+
2
—
Low input enables receiver ROUT output. High input sets ROUT to high impedance.
Positive terminals of the voltage-doubler charge-pump capacitors
V+
3
O
5.5-V supply generated by the charge pump
C1–
4
—
Negative terminals of the voltage-doubler charge-pump capacitors
C2+
5
—
Positive terminals of the voltage-doubler charge-pump capacitors
C2–
6
—
Negative terminals of the voltage-doubler charge-pump capacitors
V–
7
O
–5.5-V supply generated by the charge pump
RIN
8
I
RS-232 receiver input
ROUT
9
O
Receiver output
INVALID
10
O
Invalid output pin. Output low when all RIN inputs are unpowered.
DIN
11
I
Driver input
FORCEON
12
I
Automatic power-down control input
DOUT
13
O
RS-232 driver output
GND
14
—
Ground
VCC
15
—
3-V to 5.5-V supply voltage
FORCEOFF
16
I
Automatic power-down control input
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Supply voltage range(2)
VCC
range(2)
V+
Positive output supply voltage
V–
Negative output supply voltage range(2)
V+ – V– Supply voltage
Input voltage range
VO
Output voltage range
TJ
Operating virtual junction temperature
Tstg
Storage temperature range
(2)
MAX
6
V
–0.3
7
V
0.3
–7
V
13
V
difference(2)
VI
(1)
MIN
–0.3
Driver ( FORCEOFF, FORCEON, EN)
–0.3
6
Receiver
–25
25
–13.2
13.2
–0.3
VCC + 0.3
Driver
Receiver ( INVALID)
–65
UNIT
V
V
150
°C
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to network GND.
7.2 ESD Ratings
VALUE
V (ESD)
Electrostatic discharge
DOUT, RIN
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001(1)
(1)
(2)
±15000
All other pins
Charged-device model (CDM), per JEDEC specification
UNIT
±3000
JESD22-C101(2)
V
±1500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 ESD Ratings - IEC Specifications
VALUE
V (ESD)
(1)
Electrostatic discharge
IEC 61000-4-2 Contact Discharge
IEC 61000-4-2 Air Discharge
(1)
(1)
RIN and DOUT pins only
±8000
RIN and DOUT pins only
±15000
UNIT
V
For the PW package of SN65C3221E only, a minimum of 1-µF capacitor is required between VCC and GND to meet the specified
IEC-ESD level.
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7.4 Recommended Operating Conditions
See Figure 10-1. see (1)
VCC = 3.3 V
Supply voltage
VCC = 5 V
VIH
Driver and control
high-level input voltage
DIN, FORCEOFF, FORCEON, EN
VIL
Driver and control
low-level input voltage
DIN, FORCEOFF, FORCEON, EN
VI
Driver and control input voltage
DIN, FORCEOFF, FORCEON
VI
Receiver input voltage
TA
(1)
Operating free-air temperature
VCC = 3.3 V
MIN
NOM
MAX
3
3.3
3.6
4.5
5
5.5
2
VCC = 5 V
UNIT
V
V
2.4
0.8
V
0
5.5
V
V
–25
25
SN65C3221E
–40
85
SN75C3221E
0
70
°C
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
7.5 Thermal Information
SN65C3221E
THERMAL METRIC1
6
SN75C3221E
PW (TSSOP)
DB (SSOP)
PW (TSSOP)
DB (SSOP)
16 PINS
16 PINS
16 PINS
16 PINS
UNIT
R θJA
Junction-to-ambient thermal
resistance
110.9
82
108
82
°C/W
R θJC(top)
Junction-to-case (top) thermal
resistance
41.7
45.7
41.1
45.7
°C/W
R θJB
Junction-to-board thermal
resistance
57.2
44.4
51.4
44.4
°C/W
ψ JT
Junction-to-top characterization
parameter
4.2
11.0
3.9
11.0
°C/W
ψ JB
Junction-to-board
characterization parameter
56.6
43.8
50.9
43.8
°C/W
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7.6 Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)
TEST CONDITIONS(1)
PARAMETER
II
Input leakage current
(1)
(2)
FORCEOFF, FORCEON, EN
Supply current
(TA = 25°C)
ICC
MIN
TYP(2)
MAX
±0.01
±1
μA
0.3
1
mA
Auto-powerdown disabled
No load,
FORCEOFF and FORCEON at VCC
Powered off
No load, FORCEOFF at GND
1
10
Auto-powerdown enabled
No load, FORCEOFF at VCC,
FORCEON at GND,
All RIN are open or grounded
1
10
UNIT
μA
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
7.7 Driver Section: Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)
TEST CONDITIONS(1)
PARAMETER
MIN
VOH
High-level output voltage
DOUT at RL = 3 kΩ to GND,
DIN = GND
5
VOL
Low-level output voltage
DOUT at RL = 3 kΩ to GND,
DIN = VCC
–5
IIH
High-level input current
VI = VCC
IIL
Low-level input current
VI at GND
IOS
Short-circuit output
current(3)
VCC = 3.6 V,
VO = 0 V
VCC = 5.5 V,
VO = 0 V
ro
Output resistance
VCC, V+, and V– = 0 V,
VO = ±2 V
Ioff
Output leakage current
FORCEOFF = GND
(1)
(2)
(3)
TYP(2) MAX
5.4
300
V
–5.4
±0.01
UNIT
V
±1
μA
±0.01
±1
μA
±35
±60
±35
±90
10M
mA
Ω
VO = ±12 V,
VCC = 3 V to 3.6 V
±25
VO = ±10 V,
VCC = 4.5 V to 5.5 V
±25
μA
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one
output should be shorted at a time.
7.8 Switching Characteristics: Driver
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)
TEST CONDITIONS(1)
PARAMETER
Maximum data rate
(see Figure 8-1)
MIN
CL = 1000 pF
RL = 3 kΩ
MAX
UNIT
250
CL = 250 pF,
VCC = 3 V to 4.5 V
1000
CL = 1000 pF,
VCC = 4.5 V to 5.5 V
1000
tsk(p)
Pulse skew(3)
CL = 150 pF to 2500 pF,
RL = 3 kΩ to 7 kΩ,
See Figure 8-2
SR(tr)
Slew rate,
transition region
(see Figure 8-1)
VCC = 3.3 V,
RL = 3 kΩ to 7 kΩ,
CL = 150 pF to 1000 pF
(1)
(2)
(3)
TYP(2)
kbit/s
100
18
ns
150
V/μs
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Pulse skew is defined as |tPLH - tPHL| of each channel of the same device.
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7.9 Receiver Section: Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)
TEST CONDITIONS(1)
PARAMETER
VOH
High-level output voltage
IOH = –1 mA
VOL
Low-level output voltage
IOL = 1.6 mA
VIT+
Positive-going input threshold voltage
VIT–
Negative-going input threshold voltage
Vhys
Input hysteresis (VIT+ – VIT–)
Ioff
Output leakage current
FORCEOFF = 0 V
ri
Input resistance
VI = ±3 V to ±25 V
(1)
(2)
MIN
TYP(2)
VCC – 0.6 V
VCC – 0.1 V
MAX
V
0.4
VCC = 3.3 V
1.6
2.4
VCC = 5 V
1.9
2.4
VCC = 3.3 V
0.6
1.1
VCC = 5 V
0.8
1.4
UNIT
V
V
V
0.5
V
±0.05
±10
μA
5
7
kΩ
3
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
7.10 Switching Characteristics: Receiver
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10-1)
TEST CONDITIONS(1)
PARAMETER
UNIT
tPLH
Propagation delay time, low- to high-level output
CL = 150 pF, See Figure 8-3
150
ns
tPHL
Propagation delay time, high- to low-level output
CL = 150 pF, See Figure 8-3
150
ns
ten
Output enable time
CL = 150 pF, RL = 3 kΩ, See Figure 8-4
200
ns
tdis
Output disable time
CL = 150 pF, RL = 3 kΩ, See Figure 8-4
200
ns
50
ns
tsk(p)
(1)
(2)
(3)
8
TYP(2)
Pulse
skew(3)
See Figure 8-3
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Pulse skew is defined as |tPLH - tPHL| of each channel of the same device.
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7.11 Auto-powerdown Section: Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 8-5)
PARAMETER
TEST CONDITIONS
MIN
VT+(valid)
Receiver input threshold
for INVALID high-level output voltage
FORCEON = GND,
FORCEOFF = VCC
VT–(valid)
Receiver input threshold
for INVALID high-level output voltage
FORCEON = GND,
FORCEOFF = VCC
–2.7
VT(invalid)
Receiver input threshold
for INVALID low-level output voltage
FORCEON = GND,
FORCEOFF = VCC
–0.3
VOH
INVALID high-level output voltage
IOH = –1 mA, FORCEON = GND,
FORCEOFF = VCC
VOL
INVALID low-level output voltage
IOL = 1.6 mA, FORCEON = GND,
FORCEOFF = VCC
MAX
2.7
UNIT
V
V
0.3
VCC – 0.6
V
V
0.4
V
7.12 Switching Characteristics: Auto-powerdown
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 8-5)
PARAMETER
tvalid
Propagation delay time, low- to high-level output
tinvalid
Propagation delay time, high- to low-level output
ten
Supply enable time
(1)
TYP(1)
UNIT
1
μs
30
μs
100
μs
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
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8 Parameter Measurement Information
FORCEON
3V
Generator
(see Note B)
3V
Input
RS-232
Output
50 Ω
RL
tTHL
CL
(see Note A)
3V
FORCEOFF
TEST CIRCUIT
0V
3V
3V
Output
SR(tr) +
tTLH
−3 V
−3 V
6V
t THL or tTLH
VOH
VOL
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 8-1. Driver Slew Rate
FORCEON
3V
Generator
(see Note B)
3V
RS-232
Output
50 Ω
RL
Input
1.5 V
1.5 V
0V
CL
(see Note A)
tPLH
tPHL
VOH
3V
FORCEOFF
50%
50%
Output
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 8-2. Driver Pulse Skew
EN = VCC
3V
Input
1.5 V
1.5 V
−3 V
Output
Generator
(see Note B)
50 Ω
tPHL
CL
(see Note A)
tPLH
VOH
50%
Output
50%
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 8-3. Receiver Propagation Delay Times
10
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3V
Input
VCC
1.5 V
GND
S1
0V
tPZH
(S1 at GND)
tPHZ
(S1 at GND)
RL
3 V or 0 V
1.5 V
VOH
Output
50%
Output
CL
(see Note A)
EN
Generator
(see Note B)
0.3 V
tPZL
(S1 at VCC)
tPLZ
(S1 at VCC)
50 Ω
0.3 V
Output
50%
VOL
TEST CIRCUIT
NOTES: A.
B.
C.
D.
VOLTAGE WAVEFORMS
CL includes probe and jig capacitance.
The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
tPLZ and tPHZ are the same as tdis.
tPZL and tPZH are the same as ten.
Figure 8-4. Receiver Enable and Disable Times
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2.7 V
EN = GND
3V
0V
Receiver
Input
0V
ROUT
Generator
(see Note B)
2.7 V
−2.7 V
−2.7 V
−3 V
50 Ω
tvalid
tinvalid
VCC
Autopowerdown
INVALID
INVALID
Output
CL = 30 pF
(see Note A)
FORCEOFF
FORCEON
DIN
DOUT
50% VCC
50% VCC
0V
ten
V+
≈V+
Supply
Voltages
0.3 V
VCC
0V
0.3 V
V−
≈V−
TEST CIRCUIT
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
VOLTAGE WAVEFORMS
Valid RS-232 Level, INVALID High
2.7 V
Indeterminate
0.3 V
0V
If Signal Remains Within This Region
For More Than 30 µs, INVALID Is Low†
−0.3 V
Indeterminate
−2.7 V
Valid RS-232 Level, INVALID High
†
Auto-powerdown disables drivers and reduces supply
current to 1 µA.
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 5 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 8-5. INVALID Propagation Delay Times and Driver Enabling Time
12
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9 Detailed Description
9.1 Device Functional Modes
Table 9-1. Each Driver
INPUTS(1)
(1)
OUTPUT
DOUT
DRIVER STATUS
X
Z
Powered off
Normal operation with
auto-powerdown disabled
DIN
FORCEON
FORCEOFF
VALID RIN
RS-232 LEVEL
X
X
L
L
H
H
X
H
H
H
H
X
L
L
L
H
Yes
H
H
L
H
Yes
L
L
L
H
No
Z
H
L
H
No
Z
Normal operation with
auto-powerdown enabled
Powered off by
auto-powerdown feature
H = high level, L = low level, X = irrelevant, Z = high impedance
Table 9-2. Each Receiver
INPUTS(1)
RIN
(1)
EN
VALID RIN
RS-232 LEVEL
OUTPUT
ROUT
L
L
X
H
H
L
X
L
X
H
X
Z
Open
L
No
H
H = high level, L = low level, X = irrelevant, Z = high impedance
(off), Open = disconnected input or connected driver off
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
10.1 Application Information
EN
16
1
2
VCC
C1+
FORCEOFF
15
+
3
C1
+
+
−
−
V+
Autopowerdown
C3(1)
4
GND
C1−
5
13
6
C2−
7
11
V−
10
C4
+
RIN
12
C2
−
CBYPASS = 0.1 µF
DOUT
C2+
+
−
−
14
8
9
FORCEON
DIN
INVALID
ROUT
5 kΩ
(1) C3 can be connected to VCC or GND.
NOTES: A. Resistor values shown are nominal.
B. Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should be connected
as shown.
VCC vs CAPACITOR VALUES
VCC
C1
C2, C3, and C4
3.3 V ± 0.3 V
5 V ± 0.5 V
3 V to 5.5 V
0.1 µF
0.047 µF
0.1 µF
0.1 µF
0.33 µF
0.47 µF
Figure 10-1. Typical Operating Circuit and Capacitor Values
14
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11 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN65C3221EDB
ACTIVE
SSOP
DB
16
80
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
Samples
SN65C3221EDBR
ACTIVE
SSOP
DB
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
Samples
SN65C3221EPWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
Samples
SN75C3221EDB
ACTIVE
SSOP
DB
16
80
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MY221E
Samples
SN75C3221EDBR
ACTIVE
SSOP
DB
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MY221E
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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