SN65C3232EPWR

SN65C3232E, SN75C3232E SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 SNx5C3232E 3-V To 5.5-V Two-Channel RS-232 1-MBIT/S Line Drivers and Receivers With ±15-kV IEC ESD Protection 1 Features 3 Description • • • • • • The SN65C3232E and SN75C3232E consist of two line drivers, two line receivers, and a dual chargepump circuit with ±15-kV ESD protection pin to pin (serial-port connection pins, including GND). These devices provide the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The devices operate at data signaling rates up to 1 Mbit/s and a driver output slew rate of 14 V/μs to 150 V/μs. • Operate with 3-V to 5.5-V VCC supply Operate up to 1 Mbit/s Low supply current . . . 300 μA typical External capacitors . . . 4 × 0.1 μF Accept 5-V logic input with 3.3-V supply Latch-up performance exceeds 100 mA Per JESD 78, class II ESD protection for RS-232 pins – ±15-kV Human-body model (HBM) – ±15-kV IEC 61000-4-2 Air-gap discharge – ±8-kV IEC 61000-4-2 Contact discharge Device Information 2 Applications PART NUMBER • Industrial PCs • Wired networking • Data center and enterprise computing • Battery-powered systems • PDAs • Notebooks • Palmtop PCs • Hand-held equipment spacer SN65C3232E SN75C3232E (1) PACKAGE(1) BODY SIZE (NOM) D (SOIC) 9.90 mm x 3.91 mm DB (SSOP) 6.20 mm x 5.30 mm DW (SOIC) 10.3 mm x 7.50 mm PW (TSSOP) 5.00 mm x 4.40 mm For all available packages, see the orderable addendum at the end of the data sheet. spacer 11 14 DIN1 DIN1 10 7 DIN2 DIN2 12 13 RIN1 ROUT1 5k 9 8 RIN2 ROUT2 5k Logic Diagram (Positive Logic) An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Protection........................................................... 4 6.3 ESD Protection, Driver................................................4 6.4 ESD Protection, Receiver........................................... 4 6.5 Recommended Operating Conditions.........................5 6.6 Thermal Information, SN65C3232E............................5 6.7 Thermal Information, SN75C3232E............................5 6.8 Electrical Characteristics, Power................................ 6 6.9 Electrical Characteristics, Driver................................. 6 6.10 Electrical Characteristics, Receiver.......................... 6 6.11 Switching Characteristics, Driver.............................. 7 6.12 Switching Characteristics, Receiver..........................7 7 Parameter Measurement Information............................ 8 8 Detailed Description........................................................9 8.1 Overview..................................................................... 9 9 Application and Implenentation................................... 11 9.1 Application Information..............................................11 Typical Application.......................................................... 11 10 Power Supply Recommendations..............................13 11 Layout........................................................................... 13 11.1 Layout Guidelines................................................... 13 11.2 Layout Example...................................................... 13 12 Device and Documentation Support..........................14 12.1 Receiving Notification of Documentation Updates..14 12.2 Support Resources................................................. 14 12.3 Trademarks............................................................. 14 12.4 Electrostatic Discharge Caution..............................14 12.5 Glossary..................................................................14 13 Mechanical, Packaging, and Orderable Information.................................................................... 14 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (December 2007) to Revision B (June 2021) Page • Added Device Information table, Pin Configuration and Functions section, Thermal Information tables, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................................................................. 1 • Updated the list of Applications ......................................................................................................................... 1 • Added a note specifying a minimum capacitor of 1 µF between VCC and GND to satisfy IEC ESD specifications in the ESD Protection, Driver table.............................................................................................. 4 • Added a note specifying the need for a 1-µF capacitor between VCC and GND to satisfy IEC ESD specifications in the ESD Protection, Receiver table..........................................................................................4 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 5 Pin Configuration and Functions C1+ V+ C1− C2+ C2− V− DOUT2 RIN2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC GND DOUT1 RIN1 ROUT1 DIN1 DIN2 ROUT2 Figure 5-1. D, DB, DW, or PW Package (Top View) Table 5-1. Pin Functions PIN NAME D, DB, DW or PW I/O(1) DESCRIPTION C1+ 1 - Positive lead of C1 capacitor V+ 2 O Positive charge pump output for storage capacitor only C1- 3 - Negative lead of C1 capacitor C2+ 4 - Positive lead of C2 capacitor C2- 5 - Negative lead of C2 capacitor V- 6 O Negative charge pump output for storage capacitor only DOUT2 7 O RS232 line data output (to remote RS232 system) RIN2 8 I RS232 line data input (from remote RS232 system) ROUT2 9 O Logic data output (to UART) DIN2 10 I Logic data input (from UART) DIN1 11 I Logic data input (from UART) ROUT1 12 O Logic data output (to UART) RIN1 13 I RS232 line data input (from remote RS232 system) DOUT1 14 O RS232 line data output (to remote RS232 system) GRD 15 - Ground VCC 16 - Supply Voltage, Connect to external 3-V to 5.5-V power supply - - Exposed thermal pad. Can be connected to GND or left floating. Thermal Pad (1) Signal Types: I = Input, O = Output, I/O = Input or Output. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E 3 SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) see (1) Supply voltage range(2) VCC range(2) V+ Positive output supply voltage V– Negative output supply voltage range(2) V+ – V– Supply voltage Input voltage range VO Output voltage range TJ Operating virtual junction temperature Tstg Storage temperature range (2) MAX 6 V –0.3 7 V 0.3 –7 V 13 V difference(2) VI (1) MIN –0.3 Drivers –0.3 6 Receivers –25 25 –13.2 13.2 –0.3 VCC + 0.3 Drivers Receivers –65 UNIT V V 150 °C 150 °C Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute MaximumRatings do not imply functional operation of the device at these or any other conditions beyond those listed underRecommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability,functionality, performance, and shorten the device lifetime.. All voltages are with respect to network GND. 6.2 ESD Protection VALUE V (ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1). ±3000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 ESD Protection, Driver PIN NAME NO. DOUT 7, 14 TEST CONDITIONS HBM, per ANSI/ESDA/JEDEC JS-001 ±15 IEC 61000-4-2 Air-Gap Discharge (1) ±15 (1) ±8 IEC 61000-4-2 Contact Discharge (1) TYP UNIT kV For D, DB, PW packages of SN65C3232E and PW package of SN75C3232E: A minimum of 1-µF capacitor is needed between VCC and GND to meet the specified IEC ESD level 6.4 ESD Protection, Receiver PIN NAME TEST CONDITIONS NO. HBM, per ANSI/ESDA/JEDEC JS-001 RIN (1) 4 8, 13 TYP ±15 (1) ±15 IEC 61000-4-2 Contact Discharge (1) ±8 IEC 61000-4-2 Air-Gap Discharge UNIT kV For D, DB, PW packages of SN65C3232E and PW package of SN75C3232E: A minimum of 1-µF capacitor is needed between VCC and GND to meet the specified IEC ESD level Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 6.5 Recommended Operating Conditions see note (1) VCC = 3.3 V Supply voltage VCC = 5 V Driver high-level input voltage VIL Driver low-level input voltage DIN Driver input voltage DIN VI TA (1) DIN VCC = 3.3 V VIH NOM MAX 3 3.3 3.6 4.5 5 5.5 UNIT 2 VCC = 5 V V V 2.4 0.8 0 5.5 –25 25 SN65C3232E –40 85 SN75C3232E 0 70 Receiver input voltage Operating free-air temperature MIN V V °C Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V (see Figure 9-1). 6.6 Thermal Information, SN65C3232E SN65C3232E THERMAL METRIC(1) PW (TSSOP) D (SOIC) DW (SOIC) DB (SSOP) UNIT 16 Pins 16 Pins 16 Pins 16 Pins R θJA Junction-to-ambient thermal resistance 108.0 85.9 57.0 103.1 °C/W R θJC(top) Junction-to-case (top) thermal resistance 39.0 43.1 33.5 49.2 °C/W R θJB Junction-to-board thermal resistance 54.4 44.5 37.1 54.8 °C/W ψ JT Junction-to-top characterization parameter 3.3 10.1 7.5 12.0 °C/W ψ JB Junction-to-board characterization parameter 53.8 44.1 37.1 54.1 °C/W R θJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application report. 6.7 Thermal Information, SN75C3232E SN75C3232E METRIC(1) PW (TSSOP) D (SOIC) DW (SOIC) DB (SSOP) UNIT 16 PINS 16 PINS 16 PINS 16 PINS R θJA Junction-to-ambient thermal resistance 108.0 82.0 57.0 46.0 °C/W R θJC(top) Junction-to-case (top) thermal 39.0 36.7 33.5 36.2 °C/W THERMAL resistance R θJB Junction-to-board thermal resistance 54.4 33.6 37.1 43.8 °C/W ψ JT Junction-to-top characterization parameter 3.3 4.2 7.5 4.2 °C/W ψ JB Junction-to-board characterization parameter 53.8 33.3 37.1 42.9 °C/W R θJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application report. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E 5 SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 6.8 Electrical Characteristics, Power over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST CONDITIONS(2) PARAMETER ICC (1) (2) Supply current No load, MIN VCC = 3.3 V or 5 V TYP(1) MAX 0.3 1 UNIT mA All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V (see Figure 9-1). 6.9 Electrical Characteristics, Driver over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST CONDITIONS(3) PARAMETER MIN TYP(1) MAX UNIT VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.5 V VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC –5 –5.4 V IIH High-level input current VI = VCC ±0.01 ±1 μA IIL Low-level input current VI at GND ±0.01 ±1 μA IOS (2) Short-circuit output current ro Output resistance (1) (2) (3) VCC = 3.6 V, VO = 0 V ±35 ±60 VCC = 5.5 V, VO = 0 V ±35 ±90 VCC, V+, and V– = 0 V, VO = ±2 V 300 10M mA Ω All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output should be shorted at a time. Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V (see Figure 9-1) . 6.10 Electrical Characteristics, Receiver over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST CONDITIONS(2) PARAMETER VOH High-level output voltage IOH = –1 mA VOL Low-level output voltage IOL = 1.6 mA VIT+ Positive-going input threshold voltage VIT– Negative-going input threshold voltage Vhys Input hysteresis (VIT+ – VIT–) ri Input resistance (1) (2) 6 MIN TYP(1) VCC – 0.6 VCC – 0.1 MAX V 0.4 VCC = 3.3 V 1.5 2.4 VCC = 5 V 1.8 2.4 VCC = 3.3 V 0.6 1.2 VCC = 5 V 0.8 1.5 3 5 V V V 0.3 VI = ±3 V to ±25 V UNIT V 7 kΩ All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V (see Figure 9-1). Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 6.11 Switching Characteristics, Driver over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST CONDITIONS(3) PARAMETER MIN TYP(1) MAX UNIT CL = 250 pF, VCC = 3 V to 4.5 V 1000 CL = 1000 pF, VCC = 3.5 V to 5.5 V 1000 Maximum data rate (see Figure 7-1) RL = 3 kΩ, One DOUT switching tsk(p) Pulse skew(2) CL = 150 pF to 2500 pF, RL = 3 kΩ to 7 kΩ, See Figure 7-2 SR(tr) Slew rate, transition region (see Figure 7-1) RL = 3 kΩ to 7 kΩ, CL = 150 pF to 1000 pF, VCC = 3.3 V (1) (2) (3) kbit/s 300 14 ns 150 V/μs All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Pulse skew is defined as |tPLH – tPHL| of each channel of the same device. Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V (see Figure 9-1). 6.12 Switching Characteristics, Receiver over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER tPLH Propagation delay time, low- to high-level output tPHL Propagation delay time, high- to low-level output tsk(p) Pulse skew(2) (1) (2) (3) TEST CONDITIONS(3) CL = 150 pF TYP(1) UNIT 300 ns 300 ns 300 ns All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Pulse skew is defined as |tPLH – tPHL| of each channel of the same device. Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V (see Figure 9-1). Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E 7 SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 7 Parameter Measurement Information 3V Input Generator (see Note B) 1.5 V RS-232 Output 50 Ω RL 1.5 V 0V tTHL CL (see Note A) Output tTLH 3V −3 V TEST CIRCUIT SR(tr) + t THL 6V or t VOH 3V −3 V VOL VOLTAGE WAVEFORMS TLH NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 7-1. Driver Slew Rate 3V Generator (see Note B) RS-232 Output 50 Ω RL Input 1.5 V 1.5 V 0V CL (see Note A) tPHL tPLH VOH 50% 50% Output VOL TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 7-2. Driver Pulse Skew 3V Input Generator (see Note B) 1.5 V 1.5 V −3 V Output 50 Ω tPHL CL (see Note A) tPLH VOH 50% Output 50% VOL TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 7-3. Receiver Propagation Delay Times 8 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 8 Detailed Description 8.1 Overview The SNx5C3232E device consists of two line drivers, two line receivers, and a dual charge-pump circuit with ±15-kV IEC ESD protection between serial-port connection terminals and GND. The device meets the requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from one 3-V to 5.5-V supply. The device operates at data signaling rates up to 1 Mbps and a maximum of 150-V/μs driver output slew rate. Outputs are protected against shorts to ground. 8.1.1 Functional Block Diagram 11 14 DIN1 DIN1 10 7 DIN2 DIN2 12 13 RIN1 ROUT1 5k 9 8 RIN2 ROUT2 5k 8.1.2 Feature Description 8.1.2.1 Power The power block increases, inverts, and regulates voltage at V+ and V– pins using a charge pump that requires four external capacitors. 8.1.2.2 RS232 Driver Two drivers interface the standard logic level to RS232 levels. Both DIN inputs must be valid high or low. 8.1.2.3 RS232 Receiver Two receivers interface RS232 levels to standard logic levels. An open input results in a high output on ROUT. Each RIN input includes an internal standard RS232 load. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E 9 SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 8.1.3 Device Functional Modes Table 8-1. Each Driver (1) INPUT DIN(1) OUTPUT DOUT L H H L H = high level, L = low level Table 8-2. Each Receiver (1) INPUT RIN(1) OUTPUT ROUT L H H L Open H H = high level, L = low level, Open = input disconnected or connected driver off 8.1.3.1 VCC Powered by 3 V to 5.5 V The device is in normal operation. 8.1.3.2 VCC Unpowered, VCC = 0 V When the SNx5C3232E device is unpowered, it can be safely connected to an active remote RS232 device. 10 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 9 Application and Implenentation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information The SNx5C3232E device is designed to convert single-ended signals into RS232-compatible signals, and vice-versa. This device can be used in any application where an RS232 line driver or receiver is required. ROUT and DIN connect to UART or general-purpose logic lines. RIN and DOUT lines connect to a RS232 connector or cable. Typical Application 1 VCC C1+ 16 + CBYPASS = 0.1 mF − + C1 − 2 + V+ GND 15 C3 − 14 3 DOUT1 C1− 13 4 RIN1 C2+ + C2 5 kW − 5 C2− 12 6 − C4 V− ROUT1 11 DIN1 + DOUT2 RIN2 7 10 8 9 DIN2 ROUT2 5 kW A. C3 can be connected to VCC or GND. Figure 9-1. Typical Operating Circuit and Capacitor Values Table 9-1. VCC vs Capacitor Values VCC C1 C2, C3, C4 3.3 V ± 0.3 V 0.1 µF 0.1 µF 5 V ± 0.5 V 0.047 µF 0.33 µF 3 V to 5.5 V 0.1 µF 0.47 µF Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E 11 SN65C3232E, SN75C3232E SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 www.ti.com 9.2.1 Design Requirements • Recommended VCC is 3.3 V or 5 V – 3 V to 5.5 V is also possible Maximum recommended bit rate is 1 Mbps • 9.2.2 Detailed Design Procedure All DIN inputs must be connected to valid low or high logic levels. Select capacitor values based on VCC level for best performance. 9.2.3 Application Performance Plots VCC must be between 3 V and 5.5 V. Charge pump capacitors must be chosen using VCC vs Capacitor Values Figure 9-2. 1 Mbps timing waveform from driver input to receiver output loopback. DOUT to RIN trace is in purple, DIN trace is in yellow and ROUT trace is in pink 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 10 Power Supply Recommendations The supply voltage, VCC, should be between 3 V and 5.5 V. Select the charge-pump capacitors using VCC vs Capacitor Values. 11 Layout 11.1 Layout Guidelines Keep the external capacitor traces short, specifically on the C1 and C2 nodes that have the fastest rise and fall times. 11.2 Layout Example Ground C3 C1 1 C1+ VCC 16 2 V+ GND 15 3 C1– DOUT1 14 4 C2+ RIN1 13 5 C2– ROUT1 12 VCC 0.1µF Ground C2 Ground 6 V– DIN1 11 7 DOUT2 DIN2 10 C4 8 RIN2 ROUT2 9 Figure 11-1. Layout Diagram Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E 13 SN65C3232E, SN75C3232E www.ti.com SLLS697B – DECEMBER 2005 – REVISED JUNE 2021 12 Device and Documentation Support TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device, generate code, and develop solutions are listed below. 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.3 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 14 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: SN65C3232E SN75C3232E PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) SN65C3232EDBR ACTIVE SSOP DB 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 MU232E Samples SN65C3232EDBRG4 ACTIVE SSOP DB 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 MU232E Samples SN65C3232EDR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 65C3232E Samples SN65C3232EDRG4 ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 65C3232E Samples SN65C3232EDW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 65C3232E Samples SN65C3232EDWR ACTIVE SOIC DW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 65C3232E Samples SN65C3232EPWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 MU232E Samples SN75C3232EDW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 75C3232E Samples SN75C3232EDWR ACTIVE SOIC DW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 75C3232E Samples SN75C3232EPWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 MY232E Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of