TS3A27518E
SCDS260F – MARCH 2009 – REVISED DECEMBER 2021
TS3A27518E 6-Channel (qSPI), 1:2 Multiplexer and Demultiplexer with Integrated
IEC L-4 ESD and 1.8-V Logic Compatible Control Inputs
1 Features
3 Description
•
•
•
•
The TS3A27518E is a bidirectional, 6-channel,
1:2 multiplexer-demultiplexer designed to operate
from 1.65 V to 3.6 V. This device can handle both
digital and analog signals, and can transmit signals
up to VCC in either direction. The TS3A27518E has
two control pins, each controlling three 1:2 muxes
at the same time, and an enable pin that put all
outputs in high-impedance mode. The control pins
are compatible with 1.8 V logic thresholds and are
backward compatible with 2.5 V and 3.3 V logic
thresholds.
•
•
•
•
•
•
•
1.65 V to 3.6 V single-supply operation
Isolation in power-down mode, VCC = 0
Low-capacitance switches, 21.5 pF (typical)
Bandwidth up to 240 MHz for high-speed
rail-to-rail signal handling
Crosstalk and OFF isolation of –62 dB
1.8 V logic compatible control inputs
3.6 V tolerant control inputs
Latch-up performance exceeds 100 mA per JESD
78, Class II
ESD performance tested per JESD 22
– 2500-V human-body model (A114-B, Class II)
– 1500-V charged-device model (C101)
ESD performance: NC/NO ports
– ±6-kV contact discharge (IEC 61000-4-2)
24-WQFN (4.00 mm × 4.00 mm) and 24-TSSOP
(7.90 mm × 6.60 mm) packages
2 Applications
•
•
•
SD-SDIO and MMC two-port MUX
PC VGA video MUX-video systems
Audio and video signal routing
The TS3A27518E allows any SD, SDIO, and
multimedia card host controllers to expand out to
multiple cards or peripherals because the SDIO
interface consists of 6-bits: CMD, CLK, and Data[0:3]
signals. This device will support other 6-bit interfaces
such a qSPI. The TS3A27518E has two control pins
that give additional flexibility to the user. For example,
the ability to mux two different audio-video signals
in equipment such as an LCD television, an LCD
monitor, or a notebook docking station.
Device Information(1)
PART NUMBER
TS3A27518E
(1)
VDD
VI/O
0.1µF
JTA G
DEBUG,
SPI, GPIO
CPU
Per ipheral s
Control
logi c
GND
BODY SIZE (NOM)
WQFN (24)
4.00 mm × 4.00 mm
TSSOP (24)
7.90 mm × 6.60 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
VDD
qSPI
Device #1
NO1
NO2
NO3
NO4
NO5
NO6
Processor
RAM
PACKAGE
COM1
COM2
COM3
COM4
COM5
COM6
SIO0
SIO1
SIO2
SIO3
SLCK
CS
qSPI
Device #2
IN1
IN2
EN
GND
NC1
NC2
NC3
NC4
NC5
NC6
SIO0
SIO1
SIO2
SIO3
SLCK
CS
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS3A27518E
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SCDS260F – MARCH 2009 – REVISED DECEMBER 2021
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 5
6.1 Absolute Maximum Ratings........................................ 5
6.2 ESD Ratings............................................................... 5
6.3 Recommended Operating Conditions.........................5
6.4 Thermal Information....................................................6
6.5 Electrical Characteristics for 3.3-V Supply..................6
6.6 Electrical Characteristics for 2.5-V Supply..................8
6.7 Electrical Characteristics for 1.8-V Supply..................9
6.8 Typical Characteristics.............................................. 12
7 Parameter Measurement Information.......................... 15
8 Detailed Description......................................................18
8.1 Overview................................................................... 18
8.2 Functional Block Diagram......................................... 18
8.3 Feature Description...................................................18
8.4 Device Functional Modes..........................................18
9 Application and Implementation.................................. 19
9.1 Application Information............................................. 19
9.2 Typical Application.................................................... 19
10 Power Supply Recommendations..............................21
11 Layout........................................................................... 21
11.1 Layout Guidelines................................................... 21
11.2 Layout Example...................................................... 21
12 Device and Documentation Support..........................22
12.1 Documentation Support.......................................... 22
12.2 Receiving Notification of Documentation Updates..22
12.3 Support Resources................................................. 22
12.4 Trademarks............................................................. 22
12.5 Electrostatic Discharge Caution..............................22
12.6 Glossary..................................................................22
13 Mechanical, Packaging, and Orderable
Information.................................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (May 2019) to Revision F (December 2021)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Changed the maximum value for the digital input voltage From: VCC To: 3.6 V ................................................ 5
• Changed the unit for the ron analog switch From: V To: Ω .................................................................................6
Changes from Revision D (May 2016) to Revision E (March 2019)
Page
• Removed the BGA MICROSTAR JUNIOR (24) package from the data sheet................................................... 1
• Changed the Typical Application ........................................................................................................................1
• Removed the BGA MICROSTAR JUNIOR (24) package................................................................................... 1
• Changed the Pin Configuration images.............................................................................................................. 3
• Removed Note: "The input and output voltage ratings..." from the Absolute Maximum Ratings table............... 5
• Removed Note: "This value is limited to 5.5-V maximum" from the Absolute Maximum Ratings table.............. 5
• Changed the Application Information section................................................................................................... 19
• Added Figure 9-2 ............................................................................................................................................. 19
Changes from Revision C (December 2015) to Revision D (May 2016)
Page
• Updated Pin Functions table...............................................................................................................................1
Changes from Revision B (May 2009) to Revision C (December 2015)
Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section................... 1
Changes from Revision A (March 2009) to Revision B (May 2009)
Page
• Changed the data sheet From: Product Preview To: Production data ...............................................................1
2
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NC6
19
NC3
20
IN1
21
NC2
22
NC1
23
24
N.C.
5 Pin Configuration and Functions
CO M1
1
18
NC4
GND
2
17
EN
CO M2
3
16
NC5
15
NO5
14
NO4
NC2
1
24
IN1
NC1
2
23
NC3
N.C.
3
22
NC6
CO M1
4
21
NC4
GND
5
20
EN
CO M2
6
19
NC5
CO M3
7
18
NO5
Th ermal
CO M3
4
VCC
5
NO6
VCC
8
17
NO4
CO M4
9
16
NO6
CO M5
10
15
NO3
NO1
11
14
IN2
CO M6
12
13
NO2
12
NO3
11
IN2
10
NO2
CO M6
NO1
CO M5
9
13
8
6
7
CO M4
Pad
No t to scale
No t to scale
Figure 5-2. PW Package
24-Pin TSSOP
Top View
Figure 5-1. RTW Package
24-Pin WQFN
Top View
1
2
3
4
5
A
CO M1
NC2
N.C.
NC3
NC6
B
CO M2
NC1
IN1
NC4
C
CO M3
VCC
GND
EN
NC5
D
CO M4
CO M6
IN2
NO5
NO4
E
CO M5
NO1
NO2
NO3
NO6
No t to scale
Figure 5-3. ZQS Package
24-Pin BGA MICROSTAR JUNIOR
Top View
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Table 5-1. Pin Functions
PIN
NAME
4
I/O
DESCRIPTION
RTW
ZQS
PW
COM1
1
A1
4
I/O
Common-signal path
COM2
3
B1
6
I/O
Common-signal path
COM3
4
C1
7
I/O
Common-signal path
COM4
6
D1
9
I/O
Common-signal path
COM5
7
E1
10
I/O
Common-signal path
COM6
9
D2
12
I/O
Common-signal path
EN
17
C4
20
I
GND
2
C3
5
—
IN1
21
B4
24
I
Digital control to connect COM to NC or NO
IN2
11
D3
14
I
Digital control to connect COM to NC or NO
N.C.
24
A3
3
—
Not connected
NC1
23
B3
2
I/O
Normally closed-signal path
NC2
22
A2
1
I/O
Normally closed-signal path
NC3
20
A4
23
I/O
Normally closed-signal path
NC4
18
B5
21
I/O
Normally closed-signal path
NC5
16
C5
19
I/O
Normally closed-signal path
NC6
19
A5
22
I/O
Normally closed-signal path
NO1
8
E2
11
I/O
Normally open-signal path
NO2
10
E3
13
I/O
Normally open-signal path
NO3
12
E4
15
I/O
Normally open-signal path
NO4
14
D5
17
I/O
Normally open-signal path
NO5
15
D4
18
I/O
Normally open-signal path
NO6
13
E5
16
I/O
Normally open-signal path
VCC
5
C2
8
—
Voltage supply
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Digital control to enable or disable all signal paths
Ground.
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SCDS260F – MARCH 2009 – REVISED DECEMBER 2021
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
VCC
Supply voltage (3)
–0.5
4.6
V
VNC
VNO
VCOM
Analog signal voltage (3)
–0.5
4.6
V
IK
Analog port diode current (4)
VCC < VNC, VNO, VCOM < 0
–50
INC
INO
ICOM
ON-state switch current (5)
VNC, VNO, VCOM = 0 to VCC
–50
50
VI
Digital input voltage (3)
–0.5
4.6
IIK
Digital input clamp current (3)
ICC
Continuous current through VCC
IGND
Continuous current through GND
–100
Tstg
Storage temperature
–65
(1)
(2)
(3)
(4)
(5)
VIO < VI < 0
mA
mA
V
–50
mA
100
mA
mA
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
Requires clamp diodes on analog port to VCC.
Pulse at 1-ms duration < 10% duty cycle.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2500
Charged-device model (CDM), per JEDEC specification JESD22-C101 or
ANSI/ESDA/JEDEC JS-002 (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply voltage
VCC
MIN
MAX
1.65
3.6
UNIT
V
0
3.6
V
0
3.6
V
VNC
Analog signal voltage
VNO
VCOM
Digital input voltage
VI
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6.4 Thermal Information
TS3A27518E
THERMAL METRIC (1)
PW
(TSSOP)
RTW
(WQFN)
ZQS (BGA
MICROSTAR JUNIOR)
UNIT
24 PINS
24 PINS
24 PINS
RθJA
Junction-to-ambient thermal resistance
104
40.7
155.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51.6
42.9
69.9
°C/W
RθJB
Junction-to-board thermal resistance
57.5
19.2
94.6
°C/W
ψJT
Junction-to-top characterization parameter
9.9
1
9
°C/W
ψJB
Junction-to-board characterization parameter
57.1
19.3
92.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
8
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics for 3.3-V Supply
VCC = 3 V to 3.6 V, TA = –40°C to +85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG SWITCH
VCOM,
VNO, VNC
Analog signal voltage
ron
ON-state resistance
VCC = 3 V
0 ≤ (VNC or VNO)
≤ VCC,
ICOM = –32 mA
Δron
ON-state
resistance match
between channels
VCC = 3 V
VNC or VNO = 2.1
Switch ON,
V,
see Figure 7-1
ICOM = –32 mA
ron(flat)
ON-state
resistance
flatness
VCC = 3 V
0 ≤ (VNC or VNO)
≤ VCC,
ICOM = –32 mA
VCC = 3.6 V
VNC or VNO = 1
V,
VCOM = 3 V,
or
VNC or VNO = 3
V,
VCOM = 1 V
VCC = 0 V
Switch OFF,
VNC or VNO = 0
see Figure 7-2
to 3.6 V,
VCOM = 3.6 V to
0,
or
VNC or VNO = 3.6
V to 0,
VCOM = 0 to 3.6
V
VCC = 3.6 V
VNC or VNO = 3
V,
VCOM = 1 V,
or
VNC or VNO = 1
V,
VCOM = 3 V
VCC = 0 V
VNC or VNO = 3.6 Switch OFF,
see Figure 7-2
V to 0,
VCOM = 0 to 3.6
V,
or
VNC or VNO = 0
to 3.6 V,
VCOM = 3.6 V to
0
INC(OFF),
INO(OFF)
0
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF)
6
Switch ON,
see Figure 7-1
Switch ON,
see Figure 7-2
TA = 25°C
3.6
4.4
TA = –40°C to
+85°C
0.3
TA = –40°C to
+85°C
0.95
TA = –40°C to
+85°C
TA = –40°C to
+85°C
–7
TA = 25°C
–1
TA = –40°C to
+85°C
–1
TA = –40°C to
+85°C
–2
TA = 25°C
–1
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–12
Ω
0.5
7
0.05
–12
TA = 25°C
TA = –40°C to
+85°C
0.05
Ω
2.1
2.3
–0.5
Ω
0.7
0.8
TA = 25°C
TA = 25°C
6.2
7.6
TA = 25°C
V
1
μA
12
0.01
1
2
0.02
1
μA
1
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6.5 Electrical Characteristics for 3.3-V Supply (continued)
VCC = 3 V to 3.6 V, TA = –40°C to +85°C (unless otherwise noted)
PARAMETER
INO(ON),
INC(ON)
ICOM(ON)
NC, NO
ON leakage
current
COM
ON leakage
current
TEST CONDITIONS
VCC = 3.6 V
VNC or VNO = 1
V,
VCOM = open,
or
VNC or VNO = 3
V,
VCOM = open
VCC = 3.6 V
VNC or VNO =
open,
VCOM = 1 V,
or
VNC or VNO =
open,
VCOM = 3 V
TA = 25°C
Switch ON,
see Figure 7-3
Switch ON,
see Figure 7-3
MIN
TYP
MAX
–2.5
0.04
2.2
TA = –40°C to
+85°C
–7
TA = 25°C
–2
TA = –40°C to
+85°C
–7
7
7
0.03
UNIT
μA
2
μA
DIGITAL CONTROL INPUTS (IN1, IN2, EN) (1)
VIH
Input logic high
VCC = 3.6 V
TA = –40°C to
+85°C
1.2
3.6
V
VIL
Input logic low
VCC = 3.6 V
TA = –40°C to
+85°C
0
0.65
V
IIH, IIL
Input leakage current VCC = 3.6 V
VI = VCC or 0
TA = 25°C
–0.1
TA = –40°C to
+85°C
–2.5
0.05
0.1
2.5
μA
DYNAMIC
VCC = 3.3 V
TA = 25°C
18.1
59
VCOM = VCC,
RL = 50 Ω
CL = 35 pF,
see Figure 7-5
VCOM = VCC,
RL = 50 Ω
CL = 35 pF,
see Figure 7-5
VNC = VNO =
VCC/2,
RL = 50 Ω
CL = 35 pF,
see Figure 7-6
VCC = 3.3 V
VGEN = 0,
RGEN = 0
CL = 0.1 nF,
see Figure 7-10
TA = 25°C
0.81
pC
NC, NO
OFF capacitance
VCC = 3.3 V
VNC or VNO =
VCC or GND,
Switch OFF
See Figure 7-4
TA = 25°C
13
pF
CCOM(OFF)
COM
OFF capacitance
VCC = 3.3 V
VNC or VNO =
VCC or GND,
Switch OFF
See Figure 7-4
TA = –40°C to
+85°C
8.5
pF
CNC(ON),
CNO(ON)
NC, NO
ON capacitance
VCC = 3.3 V
VNC or VNO =
VCC or GND,
Switch OFF
See Figure 7-4
21.5
pF
CCOM(ON)
COM
ON capacitance
VCC = 3.3 V
VCOM = VCC or
GND,
Switch ON
See Figure 7-4
21.5
pF
CI
Digital input
capacitance
VCC = 3.3 V
VI = VCC or GND See Figure 7-4
2
pF
BW
Bandwidth
VCC = 3.3 V
RL = 50 Ω,
Switch ON,
see Figure 7-6
240
MHz
OISO
OFF isolation
VCC = 3.3 V
RL = 50 Ω,
f = 10 MHz
Switch OFF,
see Figure 7-8
–62
dB
XTALK
Crosstalk
VCC = 3.3 V
RL = 50 Ω,
f = 10 MHz
Switch ON,
see Figure 7-9
–62
dB
XTALK(ADJ)
Crosstalk adjacent
VCC = 3.3 V
RL = 50 Ω,
f = 10 MHz
Switch ON,
see Figure 7-9
–71
dB
THD
Total harmonic
distortion
VCC = 3.3 V
RL = 600 Ω,
CL = 50 pF
f = 20 Hz to 20 kHz,
see Figure 7-11
tON
Turnon time
tOFF
Turnoff time
tBBM
Break-beforemake time
QC
Charge injection
CNC(OFF),
CNO(OFF)
VCC = 3 V to
3.6 V
VCC = 3.3 V
VCC = 3 V to
3.6 V
VCC = 3.3 V
VCC = 3 V to
3.6 V
TA = –40°C to
+85°C
60
TA = 25°C
25.4
TA = –40°C to
+85°C
TA = 25°C
60.6
61
4
11.1
TA = –40°C to
+85°C
ns
ns
22.7
28
ns
0.05%
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6.5 Electrical Characteristics for 3.3-V Supply (continued)
VCC = 3 V to 3.6 V, TA = –40°C to +85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.04
0.3
UNIT
SUPPLY
Positive
supply current
ICC
(1)
TA = 25°C
VCC = 3.6 V
VI = VCC or GND Switch ON or OFF T = –40°C to
A
+85°C
μA
3
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
6.6 Electrical Characteristics for 2.5-V Supply
VCC = 2.3 V to 2.7 V, TA = –40°C to +85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG SWITCH
VCOM,
VNO, VNC
Analog signal
voltage
ron
ON-state
resistance
0
VCC = 2.3 V
0 ≤ (VNC or VNO) ≤ VCC,
ICOM = –32 mA
Switch ON,
see Figure 7-1
Δron
ON-state
resistance
match
between
channels
VCC = 2.3 V
VNC or VNO = 1.6 V,
ICOM = –32 mA
Switch ON,
see Figure 7-1
ron(flat)
ON-state
resistance
flatness
VCC = 2.3 V
0 ≤ (VNC or VNO) ≤ VCC,
ICOM = –32 mA
Switch ON,
see Figure 7-2
VCC = 2.7 V
VNC or VNO = 0.5 V,
VCOM = 2.3 V,
or
VNC or VNO = 2.3 V,
VCOM = 0.5 V
INC(OFF),
INO(OFF)
VCC = 0 V
ICOM(OFF)
VCC = 2.7 V
COM
OFF leakage
current
ICOM(PWROFF
VCC = 0 V
)
INO(ON)
INC(ON)
NC, NO
ON leakage
current
ICOM(ON)
COM
ON leakage
current
5.5
TA = –40°C to
+85°C
TA = –40°C to
+85°C
TA = –40°C to
+85°C
VNC or VNO = 0.5 V,
VCOM = 2.3 V,
or
VNC or VNO = 2.3 V,
VCOM = 0.5 V
VCC = 2.7 V
VNC or VNO = 0.5 V or
2.3 V,
VCOM = open
Switch ON,
see Figure 7-3
VCC = 2.7 V
VNC or VNO = open,
VCOM = 0.5 V,
or
VNC or VNO = open,
VCOM = 2.3 V
Switch ON,
see Figure 7-3
–0.3
0.04
–6
–0.6
TA = –40°C to
+85°C
–10
TA = 25°C
–0.7
–0.7
TA = –40°C to
+85°C
–7.2
TA = 25°C
–2.1
TA = –40°C to
+85°C
–6
TA = 25°C
–2
Ω
0.3
6
0.02
0.6
μA
10
0.02
–1
TA = 25°C
Ω
2.2
2.3
TA = 25°C
TA = –40°C to
+85°C
Switch OFF,
VNC or VNO = 2.7 V to 0, see Figure 7-2
VCOM = 0 to 2.7 V,
or
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0
0.91
TA = –40°C to
+85°C
Ω
0.8
0.9
TA = 25°C
TA = 25°C
Switch OFF,
VNC or VNO = 0 to 2.7 V, see Figure 7-2
VCOM =2.7 V to 0,
or
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V
0.3
V
9.6
11.5
TA = 25°C
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
TA = 25°C
3.6
0.7
1
0.02
0.7
μA
7.2
0.03
2.1
6
0.02
μA
2
μA
TA = –40°C to
+85°C
–5.7
5.7
TA = –40°C to
+85°C
1.15
3.6
V
0.55
V
TA = 25°C
–0.1
TA = –40°C to
+85°C
–2.1
DIGITAL CONTROL INPUTS (IN1, IN2, EN) (1)
VIH
Input logic high VCC = 2.7 V
VIL
Input logic low
IIH, IIL
8
Input leakage
current
VI = VCC or GND
VCC = 2.7 V
VCC = 2.7 V
0
VI = VCC or 0
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0.01
0.1
2.1
μA
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6.6 Electrical Characteristics for 2.5-V Supply (continued)
VCC = 2.3 V to 2.7 V, TA = –40°C to +85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
17.2
36.8
UNIT
DYNAMIC
VCC = 2.5 V
VCOM = VCC,
VCC = 2.3 V to RL = 50 Ω
2.7 V
CL = 35 pF,
see Figure 7-5
TA = 25°C
tON
Turnon time
tOFF
Turnoff time
tBBM
Break-beforemake time
QC
Charge
injection
VCC = 2.5 V
VGEN = 0,
RGEN = 0
CL = 0.1 nF,
see Figure 7-10
0.47
pC
CNC(OFF),
CNO(OFF)
NC, NO
OFF
capacitance
VCC = 2.5 V
VNC or VNO = VCC or
GND,
switch OFF
See Figure 7-4
13.5
pF
CCOM(OFF)
COM
OFF
capacitance
VCC = 2.5 V
VNC or VNO = VCC or
GND,
switch OFF
See Figure 7-4
9
pF
CNC(ON),
CNO(ON)
NC, NO
ON
capacitance
VCC = 2.5 V
VNC or VNO = VCC or
GND,
switch OFF
See Figure 7-4
22
pF
CCOM(ON)
COM
ON
capacitance
VCC = 2.5 V
VCOM = VCC or GND,
switch ON
See Figure 7-4
22
pF
CI
Digital input
capacitance
VCC = 2.5 V
VI = VCC or GND
See Figure 7-4
2
pF
BW
Bandwidth
VCC = 2.5 V
RL = 50 Ω
Switch ON,
see Figure 7-6
240
MHz
OISO
OFF isolation
VCC = 2.5 V
RL = 50 Ω,
f = 10 MHz
Switch OFF,
see Figure 7-8
–62
dB
XTALK
Crosstalk
VCC = 2.5 V
RL = 50 Ω,
f = 10 MHz
Switch ON,
see Figure 7-9
–62
dB
XTALK(ADJ)
Crosstalk
adjacent
VCC = 2.5 V
RL = 50 Ω,
f = 10 MHz
Switch ON,
see Figure 7-9
–71
dB
THD
Total harmonic
distortion
VCC = 2.5 V
RL = 600 Ω,
CL = 50 pF
f = 20 Hz to 20 kHz,
see Figure 7-11
Positive
supply current
VCC = 2.7 V
VI = VCC or GND
Switch ON or OFF
VCC = 2.5 V
VCOM = VCC,
VCC = 2.3 V to RL = 50 Ω
2.7 V
CL = 35 pF,
see Figure 7-5
VCC = 2.5 V
VNC = VNO = VCC/2,
VCC = 2.3 V to RL = 50 Ω
2.7 V
CL = 35 pF,
see Figure 7-6
TA = –40°C to
+85°C
42.5
TA = 25°C
17.1
TA = –40°C to
+85°C
TA = 25°C
29.8
34.4
4.5
13
TA = –40°C to
+85°C
ns
30
33.3
TA = –40°C to
+85°C
ns
ns
0.06%
SUPPLY
ICC
(1)
TA = 25°C
0.01
0.1
TA = –40°C to
+85°C
2
μA
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
6.7 Electrical Characteristics for 1.8-V Supply
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG SWITCH
VCOM,
VNO, VNC
Analog
signal
voltage
ron
ON-state
resistance
0
VCC = 1.65 V
0 ≤ (VNC or VNO) ≤
VCC,
ICOM = –32 mA
Switch ON,
see Figure 7-1
TA = 25°C
TA = –40°C to +85°C
3.6
7.1
V
14.4
16.3
Ω
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6.7 Electrical Characteristics for 1.8-V Supply (continued)
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Δron
ON-state
resistance
match
between
channels
VCC = 1.65 V
VNC or VNO = 1.5 V,
ICOM = –32 mA
Switch ON,
see Figure 7-1
ron(flat)
ON-state
resistance
flatness
VCC = 1.65 V
0 ≤ (VNC or VNO) ≤
VCC,
ICOM = –32 mA
Switch ON,
see Figure 7-2
VCC = 1.95 V
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V
VCC = 0 V
VNC or VNO = 1.95 V
to 0,
VCOM = 0 to 1.95 V,
or
VNC or VNO = 0 to
1.95 V,
VCOM = 1.95 V to 0
VCC = 1.95 V
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V
VCC = 0 V
VNC or VNO = 1.95 V
to 0,
VCOM = 0 to 1.95 V,
or
VNC or VNO = 0 to
1.95 V,
VCOM = 1.95 V to 0
INC(OFF),
INO(OFF)
INC(PWROFF),
INO(PWROFF)
NC, NO
OFF
leakage
current
ICOM(OFF)
COM
OFF
leakage
current
ICOM(PWROFF)
MIN
TA = 25°C
INO(ON),
INC(ON)
NC, NO
ON leakage VCC = 1.95 V
current
VNC or VNO = 0.3 V,
VCOM = open,
Switch ON,
or
see Figure 7-3
VNC or VNO = 1.65 V,
VCOM = open
ICOM(ON)
COM
ON leakage VCC = 1.95 V
current
VNC or VNO = open,
VCOM = 0.3 V,
or
VNC or VNO = open,
VCOM = 1.65 V
2.7
TA = –40°C to +85°C
–5
TA = 25°C
–0.4
TA = –40°C to +85°C
–7.2
TA = 25°C
–0.4
TA = –40°C to +85°C
–0.9
TA = 25°C
–0.4
TA = –40°C to +85°C
–5
TA = 25°C
–2
TA = –40°C to +85°C
0.03
–5.2
–2
μA
μA
2
5.2
0.02
μA
0.4
5
0.02
μA
0.4
0.9
0.02
Ω
0.4
7.2
0.02
Ω
0.25
5
0.01
UNIT
5.5
7.3
–0.25
TA = 25°C
Switch ON,
see Figure 7-3
1
1.2
TA = 25°C
TA = –40°C to +85°C
Switch OFF,
see Figure 7-2
MAX
0.3
TA = –40°C to +85°C
TA = 25°C
Switch OFF,
see Figure 7-2
TYP
μA
2
μA
TA = –40°C to +85°C
–5.2
5.2
TA = –40°C to +85°C
1
3.6
V
TA = –40°C to +85°C
0
0.4
V
DIGITAL CONTROL INPUTS (IN1, IN2, EN) (1)
VIH
Input logic
high
VCC = 1.95 V
VIL
Input logic
low
VCC = 1.95 V
IIH, IIL
Input
leakage
current
VCC = 1.95 V
VI = VCC or GND
VI = VCC or 0
TA = 25°C
–0.1
TA = –40°C to +85°C
–2.1
0.01
0.1
2.1
μA
DYNAMIC
VCC = 1.8 V
tON
Turnon time V = 1.65 V
CC
to 1.95 V
tOFF
Turnoff time V = 1.65 V
CC
to 1.95 V
VCC = 1.8 V
tBBM
Breakbeforemake time
QC
Charge
injection
10
VCC = 1.8 V
VCC = 1.65 V
to 1.95 V
VCC = 1.8 V
VCOM = VCC,
RL = 50 Ω
CL = 35 pF,
see Figure 7-5
VCOM = VCC,
RL = 50 Ω
CL = 35 pF,
see Figure 7-5
VNC = VNO = VCC/2,
RL = 50 Ω
CL = 35 pF,
see Figure 7-6
VGEN = 0,
RGEN = 0
CL = 1 nF,
see Figure 7-10
TA = 25°C
14.1
TA = –40°C to +85°C
56.7
TA = 25°C
16.1
TA = –40°C to +85°C
TA = 25°C
5.3
18.4
ns
58
58
0.21
ns
26.5
31.2
TA = –40°C to +85°C
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ns
pC
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6.7 Electrical Characteristics for 1.8-V Supply (continued)
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CNC(OFF),
CNO(OFF)
NC, NO
OFF
VCC = 1.8 V
capacitance
VNC or VNO = VCC or
GND,
switch OFF
See Figure 7-4
9
pF
CNC(ON),
CNO(ON)
NC, NO
ON
VCC = 1.8 V
capacitance
VNC or VNO = VCC or
GND,
switch OFF
See Figure 7-4
22
pF
CCOM(ON)
COM
ON
VCC = 1.8 V
capacitance
VCOM = VCC or GND,
See Figure 7-4
switch ON
22
pF
CI
Digital input
VCC = 1.8 V
capacitance
VI = VCC or GND
See Figure 7-4
2
pF
BW
Bandwidth
VCC = 1.8 V
RL = 50 Ω
Switch ON,
see Figure 7-6
240
MHz
OISO
OFF
isolation
VCC = 1.8 V
RL = 50 Ω,
f = 10 MHz
Switch OFF,
see Figure 7-8
–60
dB
XTALK
Crosstalk
VCC = 1.8 V
RL = 50 Ω,
f = 10 MHz
Switch ON,
see Figure 7-9
–60
dB
XTALK(ADJ)
Crosstalk
adjacent
VCC = 1.8 V
RL = 50 Ω,
f = 10 MHz
Switch ON,
see Figure 7-9
–71
dB
THD
Total
harmonic
distortion
VCC = 1.8 V
RL = 600 Ω,
CL = 50 pF
f = 20 Hz to 20 kHz,
see Figure 7-11
Positive
supply
current
VCC = 1.95 V
VI = VCC or GND
Switch ON or OFF
0.1%
SUPPLY
ICC
(1)
TA = 25°C
TA = –40°C to +85°C
0.01
0.1
1.5
μA
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
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7
8
6
7
ON-State Resistance, rON (W)
ON-State Resistance, rON (W)
6.8 Typical Characteristics
5
4
3
2
6
5
4
3
85ºC
2
85ºC
1
25ºC
25ºC
1
-–40ºC
–40ºC
0
0
0.0
0.5
1.0
1.5
2.0
COM Voltage, VCOM (V)
2.5
3.0
3.5
Figure 6-1. ON-State Resistance vs COM Voltage (VCC = 3 V)
0.0
0.5
1.0
1.5
COM Voltage, VCOM (V)
2.0
2.5
Figure 6-2. ON-State Resistance vs COM Voltage (VCC = 2.3 V)
600
12
550
500
Leakage Current, II (nA)
ON-State Resistance, rON (W)
10
8
6
4
85ºC
COM (ON)
400
NO (OFF)
NO (ON)
350
300
250
200
150
25ºC
2
COM (OFF)
450
100
-–40ºC
50
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
COM Voltage, VCOM (V)
1.4
1.6
1.8
Figure 6-3. ON-State Resistance vs COM Voltage (VCC = 1.65 V)
–40
25
Temperature, TA (°C)
85
Figure 6-4. Leakage Current vs Temperature (VCC = 3.3 V)
45
4.0
40
3.5
35
Output Voltage, VOUT (V)
Supply Current, I+ (nA)
3.0
30
25
20
15
10
2.5
2.0
1.5
1.0
5
INx = High
0
INx = Low
–5
0.0
0.5
1.0
1.5
2.0
2.5
Supply Voltage, V+ (V)
3.0
3.5
Figure 6-5. Supply Current vs Supply Voltage
12
0.5
4.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Input Voltage, VIN (V)
1.4
1.6
1.8
2.0
Figure 6-6. Control Input Thresholds (IN1, TA = 25°C)
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–10
–10
–20
–20
–30
–30
–40
–40
Magnitude (dB)
Magnitude (dB)
6.8 Typical Characteristics (continued)
–50
–60
–70
–50
–60
–70
1.8 V
NO1TOCOM1-NO2
–80
NO1TOCOM1-NO3
2.5 V
–80
NO1TOCOM1-NO4
3.3 V
NO1TOCOM1-NO5
–90
–90
NO1TOCOM1-NO6
–100
0.1
1
10
Frequency (MHz)
100
1000
–100
0.1
10
Frequency (MHz)
1
Figure 6-7. Crosstalk Adjacent
100
1000
Figure 6-8. Crosstalk
0.11
–10
–20
–30
0.09
Magnitude (dB)
Total Harmonic Distortion, THD (%)
0.10
1.8 V
2.5 V
0.08
3.3 V
0.07
–40
–50
–60
–70
1.8 V
–80
2.5 V
0.06
3.3 V
–90
0.05
0.1
–100
1
10
Frequency (Hz)
1000
100
0.1
1
Figure 6-9. Total Harmonic Distortion vs Frequency
10
Frequency (MHz)
100
1000
Figure 6-10. OFF Isolation
1
0
–2
0
–4
–1
Charge Injection, QC (pC)
Magnitude (dB)
–6
–8
–10
–12
1.8 V
–14
2.5 V
–16
–3
–4
–5
3.3 V
–6
–18
–20
0.1
–2
–7
1
10
Frequency (MHz)
100
Figure 6-11. Insertion Loss
1000
0
0.3
0.6
0.9
1.2
Bias Voltage (V)
1.5
1.8
Figure 6-12. Charge Injection vs Bias Voltage (1.8 V)
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6.8 Typical Characteristics (continued)
2
4
2
0
Charge Injection, QC (pC)
Charge Injection, QC (pC)
0
–2
–4
–6
–2
–4
–6
–8
–10
–12
–8
–14
–10
–16
0
0.3
0.6
0.9
1.5
1.8
1.2
Bias Voltage (V)
2.1
2.4
2.5
Figure 6-13. Charge Injection vs Bias Voltage (2.5 V)
14
0
0.3
0.6
0.9
1.2
1.5 1.8 2.1 2.4
Bias Voltage (V)
2.4
2.7
3.0
3.3
Figure 6-14. Charge Injection vs Bias Voltage (3.3 V)
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7 Parameter Measurement Information
Table 7-1. Parameter Description
DESCRIPTION
VCOM
Voltage at COM.
VNC
Voltage at NC.
VNO
Voltage at NO.
ron
Resistance between COM and NC or NO ports when the channel is ON.
Δron
Difference of ron between channels in a specific device.
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions.
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state.
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open.
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state.
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open.
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the OFF state.
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the ON state and the
output (NC or NO) open.
VIH
Minimum input voltage for logic high for the control input (IN, EN).
VIL
Maximum input voltage for logic low for the control input (IN, EN).
VI
Voltage at the control input (IN, EN).
IIH, IIL
Leakage current measured at the control input (IN, EN).
tON
Turnon time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning ON.
tOFF
Turnoff time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or NO)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance, and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF.
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON.
CNO(OFF)
Capacitance at the NC port when the corresponding channel (NO to COM) is OFF.
CNO(ON)
Capacitance at the NC port when the corresponding channel (NO to COM) is ON.
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NC) is OFF.
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC) is ON.
CI
Capacitance of control input (IN, EN).
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC1 to NO1). Adjacent
crosstalk is a measure of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2). This is
measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of
root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
ICC
Static power-supply current with the control (IN) pin at VCC or GND.
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VCC
VCC
OFF-State Leakage Current
Channel OFF
+
+
+
Ω
IN
IN
+
+
Figure 7-2. OFF-State Leakage Current (ICOM(OFF),
INC(OFF), ICOM(PWROFF), INC(PWROFF))
Figure 7-1. ON-State Resistance (rON)
VCC
VCC
VNO
NO
Capacitance
Meter
ON-State Leakage Current
Channel ON
+
VBIAS = VCC or GND and
VI = VIH or VIL
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
COM COM
VBIAS
IN
+
Figure 7-3. ON-State Leakage Current (ICOM(ON),
INC(ON))
Figure 7-4. Capacitance (CI, CCOM(OFF), CCOM(ON),
CNC(OFF), CNC(ON))
VCC
VCC
TEST
VNC or VNO
50 Ω
35 pF
NC or NO
50 Ω
35 pF
NC or NO
VCC
VOH
IN
VCC
Logic
Intput
VNC or VNO = VCC
RL = 50 Ω
CL = 35 pF
90%
Switch
Output
90%
All input pulses are supplied by generators having the following
characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following
characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 7-6. Break-Before-Make Time (tBBM)
Figure 7-5. Turnon (tON) and Turnoff Time (tOFF)
VCC
VCC
Channel OFF: NO to COM
Channel ON: NO to COM
50 Ω
VI = VIH or VIL
50 Ω
VI = VIH or VIL
Ω
Network Analyzer Setup
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
IN
Ω
+
Figure 7-7. Bandwidth (BW)
IN
Ω
+
Figure 7-8. OFF Isolation (OISO)
VCC
50 Ω
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
VCC
Channel ON: NC to COM
Channel OFF: NO to COM
NC
VI = VIH or VIL
Δ
NO
Ω
IN
Ω
+
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
VCC
IN
xΔ
Figure 7-9. Crosstalk (XTALK)
All input pulses are supplied by generators having the following
characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 7-10. Charge Injection (QC)
16
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Channel ON: COM to NO
VI = VIH or VIL
RL = 600 Ω
VSOURCE = VCC P-P
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
VCC
Audio Analyzer
NO
600 Ω
COM
IN
+
600 Ω
CL includes probe and jig capacitance.
Figure 7-11. Total Harmonic Distortion (THD)
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8 Detailed Description
8.1 Overview
The TS3A27518E is a bidirectional, 6-channel, 1:2 multiplexer-demultiplexer designed to operate from 1.65 V
to 3.6 V. This device can handle both digital and analog signals, and can transmit signals up to VCC in either
direction. The TS3A27518E has two control pins, each controlling three 1:2 muxes at the same time, and an
enable pin that puts all outputs in high-impedance mode. The control pins are compatible with 1.8-V logic
thresholds and are backward compatible with 2.5-V and 3.3-V logic thresholds.
8.2 Functional Block Diagram
VCC
IN1
EN
Logic
IN2
NC1
NO1
NC4
COM1
NO4
COM4
NC2
NO2
NC5
COM2
NO5
COM5
NC3
NC6
NO3
NO6
COM3
COM6
GND
Copyright © 2016, Texas Instruments Incorporated
8.3 Feature Description
The isolation in power-down mode, VCC = 0 feature places all switch paths in high-impedance state (High-Z)
when the supply voltage equals 0 V.
8.4 Device Functional Modes
The TS3A27518E is a bidirectional device that has two sets of three single-pole double-throw switches.
Two digital signals control the 6 channels of the switch; one digital control for each set of three single-pole,
double-throw switches. Digital input pin IN1 controls switches 1, 2, and 3, while pin IN2 controls switches 4, 5,
and 6.
The TS3A27518 has an EN pin that when set to logic high, it places all channels into a high-impedance or
HIGH-Z state. Table 8-1 lists the functions of TS3A27518E.
Table 8-1. Function Table
18
EN
IN1
IN2
NC1/2/3 TO COM1/2/3,
COM1/2/3 TO NC1/2/3
NC4/5/6 TO COM4/5/6,
COM4/5/6 TO NC4/5/6
NO1/2/3 TO COM1/2/3,
COM1/2/3 TO NO1/2/3
NO4/5/6 TO COM4/5/6,
COM4/5/6 TO NO4/5/6
H
X
X
OFF
OFF
OFF
OFF
L
L
L
ON
ON
OFF
OFF
L
H
L
OFF
ON
ON
OFF
L
L
H
ON
OFF
OFF
ON
L
H
H
OFF
OFF
ON
ON
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The switches are bidirectional, so the NO, NC, and COM pins can be used as either inputs or outputs. This
functionality allows port expansion to support many different types of bidirectional signal inferfaces such as SD,
SDIO, GPIO, MMC, and qSPI.
9.2 Typical Application
VCC
VCC
VCC
NC1
COM1
NO1
NC2
COM2
NO2
NC3
COM3
NO3
SD/MMC Memory
Card
NC4
SDIO Port
COM4
NO4
NC5
COM5
NO5
NC6
COM6
NO6
Digital Baseband or
Apps Processor
IN1, IN2, EN
VCC
TS3A27518
SDIO Peripheral
(Bluetooth, WLAN,
DTV, etc)
Copyright © 2016, Texas Instruments Incorporated
Figure 9-1. SDIO Expander Application Block Diagram
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VDD
VI/O
0.1µF
VDD
qSPI
Device #1
NO1
NO2
NO3
NO4
NO5
NO6
Processor
RAM
JTA G
DEBUG,
SPI, GPIO
CPU
Per ipheral s
COM1
COM2
COM3
COM4
COM5
COM6
qSPI
Device #2
NC1
NC2
NC3
NC4
NC5
NC6
IN1
IN2
EN
Control
logi c
GND
GND
SIO0
SIO1
SIO2
SIO3
SLCK
CS
SIO0
SIO1
SIO2
SIO3
SLCK
CS
Figure 9-2. qSPI Expander Application Block Diagram
9.2.1 Design Requirement
Ensure that all of the signals passing through the switch are within the recommended operating ranges to ensure
proper performance, see Section 6.3.
9.2.2 Detailed Design Procedure
The TS3A27518E can be properly operated without any external components. However, TI recommends
connecting unused pins to the ground through a 50-Ω resistor to prevent signal reflections back into the
device. TI also recommends that the digital control pins (INX) be pulled up to VCC or down to GND to avoid
undesired switch positions that could result from the floating pin. Refer to the Enabling SPI-Based Flash Memory
Expansion by Using Multiplexers application brief for more information on using switches and multiplexers for
SPI protocol expansion.
For the RTW package, connect the thermal pad to ground.
9.2.3 Application Curve
7
ON-State Resistance, rON (W)
6
5
4
3
2
85ºC
1
25ºC
–40ºC
0
0.0
0.5
1.0
1.5
2.0
COM Voltage, VCOM (V)
2.5
3.0
3.5
Figure 9-3. ON-State Resistance vs COM Voltage (VCC = 3 V)
20
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10 Power Supply Recommendations
TI recommends proper power-supply sequencing for all CMOS devices. Do not exceed the absolute maximum
ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always
sequence VCC on first, followed by NO, NC, or COM. Although it is not required, power-supply bypassing
improves noise margin and prevents switching noise propagation from the VCC supply to other components. A
0.1-μF capacitor is adequate for most applications, if connected from VCC to GND.
11 Layout
11.1 Layout Guidelines
To ensure reliability of the device, TI recommends following these common printed-circuit board layout
guidelines:
•
•
•
Bypass capacitors should be used on power supplies, and should be placed as close as possible to the VCC
pin
Short trace-lengths should be used to avoid excessive loading
For the RTW package, connect the thermal pad to ground
11.2 Layout Example
To System
= VIA to GND Plane
NC6
NC3
IN1
NC2
NC5
COM3
NO5
Vcc
NO4
COM4
NO6
NO3
COM2
IN2
EN
NO2
GND
COM6
NC4
NO1
COM1
COM5
0603 Cap
NC1
N.C.
You may ground the
N.C pin or not
include a trace
Figure 11-1. WQFN Layout Recommendation
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
•
Texas Instruments, Enabling SPI-Based Flash Memory Expansion by Using Multiplexers application brief
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS3A27518EPWR
ACTIVE
TSSOP
PW
24
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
YL518E
TS3A27518ERTWR
ACTIVE
WQFN
RTW
24
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
YL518E
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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