P2N2907

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package C BE Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 VCEO 40 Collector Emitter Voltage VCBO 60 Collector Base Voltage Emitter Base Voltage Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC Total Power Dissipation @ TC=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient VEBO ICM PD PD Tj, Tstg 5 600 625 5 1.5 12 - 55 to +150 P2N2907A 60 60 UNIT V V V mA mW mW/ºC W mW/ºC ºC Rth (j-c) Rth (j-a) 83.3 200 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage SYMBOL *VCEO VCBO VEBO ICBO Collector Cut off Current ICEX ICEO IEBO IBEX *VCE (sat) *VBE (sat) TEST CONDITION IC=10mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=50V, IE=0 VCB=50V, IE=0, Ta=150oC VCE=30V, VEB(off)=0.5V VCE=10V, IB=0 VEB=3V, IC=0 VCE=30V, VEB(off)=0.5V IC=150mA, IB=15mA IC=500mA, IB=50mA Base Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA P2N2907 >40 >60 >5