2N6675

2N6674 2N6675 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6674 450 300 7.0 15 20 5.0 175 -65 to +200 1.0 2N6675 650 400 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE=1.5V ICEV VCE=Rated VCEV, VBE=1.5V, TC=100°C IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE IS/b IS/b hfe ft Cob VEB=7.0V IC=200mA (2N6674) IC=200mA (2N6675) IC=10A, IB=2.0A IC=10A, IB=2.0A, TC=100°C IC=15A, IB=5.0A IC=10A, IB=2.0A VCE=2.0V, IC=10A VCE=30V, IC=5.9A VCE=100V, IC=250mA VCE=10V, IC=1.0A, f=5.0MHz VCE=10V, IC=1.0A, f=5.0MHz VCB=10V, IE=0, f=100kHz 8.0 1.0 1.0 3.0 15 150 300 400 MAX 0.1 1.0 2.0 UNITS mA mA mA V V 1.0 2.0 5.0 1.5 20 V V V V s s 10 50 500 MHz pF R1 (10-March 2011) 2N6674 2N6675 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX td* VEB=6.0V, IC=10A, IB=2.0A 0.1 tr* VEB=6.0V, IC=10A, IB=2.0A 0.6 tr* ts* ts* tf* tf* VEB=6.0V, IC=10A, IB=2.0A, TC=100°C VEB=6.0V, IC=10A, IB1=IB2=2.0A VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C VEB=6.0V, IC=10A, IB1=IB2=2.0A VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 1.0 2.5 4.0 0.5 1.0 UNITS µs µs µs µs µs µs µs * VCC=135V, tp=20µs TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (10-March 2011) w w w. c e n t r a l s e m i . c o m