2N6675

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6674 2N6675 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6674 VCBO Collector-base voltage 2N6675 2N6674 VCEO Collector-emitter voltage 2N6675 VEBO IC IB Emitter-base voltage Collector current Base current Ta=25 PT Total Power Dissipation TC=25 Tj Tstg Junction temperature Storage temperature 175 200 -65~200 Open collector Open base 400 7 15 5 6 W V A A Open emitter 650 300 V CONDITIONS VALUE 450 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6674 2N6675 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6674 VCEO(SUS) Collector-emitter sustaining voltage 2N6675 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6674 ICBO Collector cut-off current 2N6675 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=650V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=3V IC=10A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz 15 8 15 1.0 40 20 MHz mA IC=10A; IB=2A IC=15A; IB=5A IC=10A; IB=2A VCB=450V; IE=0 0.1 mA IC=0.2A ;IB=0 400 1.0 5.0 1.5 V V V CONDITIONS MIN 300 V TYP. MAX UNIT SYMBOL 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6674 2N6675 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3