CMLDM7585TR

CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: 87C SOT-563 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable devices FEATURES: • ESD protection up to 1800V (Human Body Model) • 350mW power pissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-563 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL N-CH (Q1) VDS 20 Gate-Source Voltage VGS ID Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) IDM PD Power Dissipation (Note 1) Power Dissipation (Note 2) Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS BVDSS VGS(th) VDS=16V, VGS=0 VGS=0, ID=250μA VDS=VGS, ID=250μA VSD VSD rDS(ON) rDS(ON) rDS(ON) rDS(ON) rDS(ON) rDS(ON) 8.0 V mA 1.0 350 TJ, Tstg ΘJA Thermal Resistance (Note 1) N-CH (Q1) MIN TYP MAX 1.0 UNITS V 650 1.3 PD PD Power Dissipation (Note 3) P-CH (Q2) A mW 300 mW 150 mW -65 to +150 °C 357 °C/W P-CH (Q2) MIN TYP MAX 10 UNITS μA - - 100 - - 100 20 - - 20 - - V 0.5 - 1.1 0.5 - 1.0 V VGS=0, IS=200mA VGS=0, IS=250mA VGS=4.5V, ID=600mA - - 1.1 - - - V - - - - - 1.1 V - - - Ω VGS=4.5V, ID=350mA VGS=2.5V, ID=500mA VGS=2.5V, ID=300mA - - - - Ω - - - - 0.37 0.5 Ω VGS=1.8V, ID=350mA VGS=1.8V, ID=150mA - - 0.7 - - - Ω - - - - - 0.8 Ω - 0.14 0.23 - - 0.2 0.275 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 - 0.25 0.36 nA Ω R6 (8-June 2015) CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS gFS VDS=10V, ID=400mA gFS VDS=10V, ID=200mA Crss Ciss Coss Qg(tot) Qg(tot) Qgs Qgs Qgd Qgd ton toff N-CH (Q1) MIN TYP 1.0 - P-CH (Q2) MIN TYP - - 0.2 UNITS S - S VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz - 18 - 25 pF - 100 - 100 pF VDS=16V, VGS=0, f=1.0MHz VDS=10V, VGS=4.5V, ID=500mA - 16 - 21 pF - 1.58 - - nC VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, ID=200mA - - - 1.2 nC ID=500mA - 0.17 - - nC ID=200mA - - - 0.24 nC - 0.24 - - nC VDS=10V, VGS=4.5V, ID=500mA VDS=10V, VGS=4.5V, ID=200mA VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω - - - 0.36 nC - 10 - 38 ns - 25 - 48 ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 87C R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET N-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET P-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). 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