2N3019

NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25° Ratings 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value 80 140 7 1 0.8 Unit V V V A Watts 5 200 -65 to +200 °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N3019 2N3020 2N3019 2N3020 Value 35 219 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 NPN 2N3019 – 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Test Condition(s) VCB =950 V, IE =0 VCB =90 V, IE =0, Tj =150°C Min Typ Mx Unit 80 140 7 50 30 90 40 100 40 50 30 15 40 100 80 80 30 10 10 10 100 120 300 120 100 0.2 0.5 1.1 400 200 4 12 60 400 MHz dB pF pF ps V nA µA nA V V V Emitter Cutoff Current VEB =5 V, IC =0 Collector Emitter Breakdown IC =10 mA, IB =0 Voltage Collector Base Breakdown IC =100 µA, IE =0 Voltage Emitter Base Breakdown IE =100 µA, IC =0 Voltage IC =0.1 mA, VCE =10 V IC =10 mA, VCE =10 V IC =150 mA, VCE =10 V hFE (1) DC Current Gain IC =500 mA, VCE =10 V IC =1 A, VCE =10 V IC =150 mA, VCE =10 V Tamb = -55°C 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3019 2N3020 2N3019 2N3020 2N3019 2N3019 2N3020 2N3019 2N3020 2N3019 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 - VCE(SAT) (1) VBE(SAT) (1) fT hfe NF CCBO CEBO rbb’Cb’c Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Transition frequency Small Signal Current Gain Noise Figure Collector-Base capacitance Emitter-Base capacitance Feedback Time Constant IC =150 mA, IB =15 mA IC =500 mA, IB =50 mA IC =150 mA, IB =15 mA IC =50 mA, VCE =10 V f = 20 MHz IC =1 mA, VCE =5 V f = 1 kHz IC=-100 µA, VCE =10 V f = 1 kHz, Rg = 1kΩ IE = 0 ,VCB=10 V f = 1 MHz IC = 0 ,VEB=0.5 V f = 1 MHz IC =10 mA, VCE =10 V f = 4 MHz (1) Pulse conditions : tp < 300 µs, δ =2% COMSET SEMICONDUCTORS 2/3 NPN 2N3019 – 2N3020 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L 12.7 5.08 45° typ max 0.49 6.6 8.5 9.4 1.2 0.9 - Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3