2N3019

2N3019 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) NPN SILICON TRANSISTOR FEATURES • NPN High Voltage Planar Transistor • Hermetic TO39 Package 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • Full Screening Options Available 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD PD Tj Tstg Rjc Rja Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Max Junction Temperature Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 140V 80V 7V 1A 0.8W 4.6mW / °C 5W 28.6mW / °C 200°C –55 to 200°C 16.5°C / W 89.5°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3064 Issue 1 2N3019 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat) VBE(sat) Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Test Conditions IB = 0 IE = 0 IC = 0 IE = 0 IE = 0 IC = 0 IB = 15mA IB = 50mA IB = 15mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 0.5V IC = 100µA IE = 100µA VCB = 90V VCB = 90V Tamb = 150°C VBE = 5V IC = 150mA IC = 500mA IC = 150mA IC = 0.1mA IC = 10mA IC = 150mA IC = 500mA IC = 1A TC = –55°C IC = 150mA Min. 80 140 7 Typ. Max. Unit V V V 0.01 10 0.010 0.20 0.50 1.1 µA µA V V Collector – Emitter Breakdown Voltage IC = 30mA 50 90 100 50 15 40 300 — hFE* DC Current Gain t* Pulse test tp = 300µs , δ ≤ 1% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter fT Cobo Cibo hfe rb’Cc NF Transition Frequency Output Capacitance Input Capacitance Small Signal Current Gain Test Conditions IC = 50mA VCB = 10V VBE = 0.5V IC = 1mA IC = 100µA VCE = 10V IE = 0 IC = 0 VCE = 5V VCB = 10V VCE = 10V RS = 1KΩ f = 20MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 79.8MHz f = 1kHz Min. 100 Typ. Max. Unit 400 12 60 MHz pF pF — ps db 80 15 400 400 4 Collector Base Time Constant IE = 10mA Noise Figure Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3064 Issue 1