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2N3019

2N3019

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    2N3019 - Low Power Transistor - ON Semiconductor

  • 数据手册
  • 价格&库存
2N3019 数据手册
2N3019 Low Power Transistor NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT PT TJ, Tstg Value 80 140 7.0 1.0 800 5.0 − 65 to +200 Unit Vdc Vdc Vdc Adc mW W °C TO−5 CASE 205AA STYLE 1 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 195 30 Unit °C/W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device JAN2N3019 JANTX2N3019 JANTXV2N3019 TO−5 Bulk Package Shipping © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N3019/D 2N3019 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (Note 1) (IC = 10 mAdc, VCE = 10 Vdc) (Note 1) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1) (IC = 1.0 Adc, VCE = 10 Vdc) (Note 1) Collector − Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) SMALL− SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: See section 4 of MIL−STD−750. Cobo |hfe| − 5.0 12 20 pF − hFE 50 90 100 50 15 − − − 300 − 300 300 − 0.2 0.5 1.1 − Symbol Min Max Unit VCE(sat) Vdc VBE(sat) Vdc http://onsemi.com 2 2N3019 PACKAGE DIMENSIONS TO−5 3−Lead CASE 205AA−01 ISSUE A B DETAIL X A B P L C A K E NOTE 7 SEATING PLANE U U R NOTE 5 F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­ SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.53 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 38.10 44.45 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.021 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 1.500 1.750 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- T D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M H M C J N 2 1 3 LEAD IDENTIFICATION DETAIL STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 3 2N3019/D
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