| CS1N60A4H | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| ITD08N65R | Wuxi China Resources Microelectronics Limited | ITD08N65R | | | 获取价格 |
| CS4N65A3R | Wuxi China Resources Microelectronics Limited | CS4N65A3R | | | 获取价格 |
| CS5752ATO | Wuxi China Resources Microelectronics Limited | 三相无刷直流电机驱动电路，VCC=15V，SOP-23H | | | 获取价格 |
| CS5765NGO | Wuxi China Resources Microelectronics Limited | CS5765NG 是一款高度集成、高可靠性的三相无刷直流电机驱动电路，主要应用于较低功率电机驱动，如风扇电机。其内置了 6 个快恢复 IGBT 和 3 个半桥 HVIC 栅极驱动电路。内部集成了欠压保护电路，提供了优异的保护和故障安全操作。由于每一相都有一个独立的负直流端，其电流可以分别单独检测。 | | | 获取价格 |
| CRSM034N06L2 | Wuxi China Resources Microelectronics Limited | SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A | | | 获取价格 |
| CRTT029N06N | Wuxi China Resources Microelectronics Limited | Trench N-MOSFET 60V, 2.3mΩ, 160A TO220 | | | 获取价格 |
| CS7N65A4R | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=650V VGS=±30V ID=7A RDS(ON)=1.4Ω@10V TO252 | | | 获取价格 |
| IPT40Q06-CEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT40Q06-CEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-DEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-DEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-BEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-BEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-DEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-DEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
工商网监