MMBT3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
· · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching
SOT-23
A C B C
Dim A B C
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0°
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8°
Mechanical Data
· · · · · · · · Case: SOT-23, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K1N Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.)
E
B TOP VIEW E D G H K J L
D E G
M
H J K L M a
C
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT3904 60 40 6.0 200 300 417 -55 to +150 Unit V V V mA mW °C/W °C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30036 Rev. 11 - 2
1 of 3
MMBT3904
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2)
@ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ¾ ¾ 40 70 100 60 30 ¾ 0.65 ¾ ¾ ¾ 1.0 0.5 100 1.0 300 ¾ Max ¾ ¾ ¾ 50 50 ¾ ¾ 300 ¾ ¾ 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 ¾ 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V
DC Current Gain
hFE
¾
Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo Cibo hie hre hfe hoe fT NF
pF pF kW x 10-4 ¾ mS MHz dB
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
td tr ts tf
¾ ¾ ¾ ¾
35 35 200 50
ns ns ns ns
Ordering Information
Device MMBT3904-7 Notes:
(Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel
2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1N
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3
K1N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2001 M Apr 4
YM
2002 N May 5
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30036 Rev. 11 - 2
2 of 3
MMBT3904
15
f = 1MHz
300 250 200 150 100 50
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
350 PD, POWER DISSIPATION (mW)
10
5
Cibo
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature
0 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
1
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125°C
100
TA = -25°C
TA = +25°C
0.1
10
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
10
IC IB = 10
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
1
0.1 0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current
DS30036 Rev. 11 - 2
3 of 3
MMBT3904