MMBT3904

MMBT3904 SOT-23 NPN Transistors 3 2 Features 1 ● Complementary to MMBT3906 1.Base 2.Emitter 3.Collector ■ Simplified outline(SOT-23) ● Marking:1AM Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector - Base Voltage Parameter VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Collector-base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 40 6 Typ Max V Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Collector- emitter cut-off current ICEX VCE= 30 V , VEB(off）=- 3V 50 Emitter cut-off current IEBO VEB= 5V , IC=0 100 IC= 10 mA, IB= 1mA 0.2 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) DC current gain IC= 50 mA, IB= 5mA IC= 10 mA, IB= 1mA 0.3 0.65 IC= 50 mA, IB= 5mA 0.85 VCE= 1V, IC= 10mA 100 hfe（2） VCE= 1V, IC= 50mA 60 hfe（3） VCE= 1V, IC= 100mA 30 VCC= 3V, VBE(off)=- 0.5V Rise time tr IC= 10mA, IB1= 1mA 35 Storage time ts VCC= 3V, IC= 10mA 200 35 tf IB1=IB2= 1mA 50 Collector input capacitance Cib VEB= 0.5V, IE= 0,f=1MHz 8 Collector output capacitance Cob VCB= 5V, IE= 0,f=1MHz 4 fT VCE= 20V, IC= 10mA,f=100MHz V 400 td Transition frequency nA 0.95 hfe（1） Delay time Fall time Unit 300 ns pF MHz ■ Classification of hfe(1) Type MMBT3904 Range 100-300 www.yfwdiode.com MMBT3904-L MMBT3904-H MMBT3904-J 100-200 200-300 300-400 1/3 Dongguan YFW Electronics Co, Ltd. MMBT3904 SOT-23 Typical Characteristics Static Characteristic 400uA 350uA 60 DC CURRENT GAIN COLLECTOR CURRENT hFE 80 hFE 400 300uA 250uA 200uA 40 150uA IC Ta=100℃ 300 Ta=25℃ 200 100 100uA 20 —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 450uA IC (mA) 100 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 0.3 IC VBEsat 1.2 300 Ta=100℃ 100 Ta=25℃ 30 30 10 3 COLLECTOR CURRENT (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 0 0.1 20 IC 100 (mA) IC —— . Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 3 1 30 10 COLLECTOR CURRENT IC 100 IC 100 0.0 200 1 10 3 (mA) 100 30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 30 Ta=25℃ Cib C (pF) Ta=100℃ CAPACITANCE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=1V 10 300 (mA) 3 Ta=25℃ 1 3 Cob 0.3 0.1 0.2 0.4 0.6 0.8 1.0 1 0.1 1.2 fT 300 —— 1 0.3 IC PC 250 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V 20 (V) Ta VCE=20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 200 100 1 3 10 COLLECTOR CURRENT www.yfwdiode.com 30 IC 200 150 100 50 0 60 (mA) 0 25 50 75 AMBIENT TEMPERATURE 2/3 100 Ta 125 150 (℃) Dongguan YFW Electronics Co, Ltd. MMBT3904 SOT-23 SOT-23 Package Outline D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 Summary of Packing Options Package SOT-23 www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,7”reel 3000 EIA-481-1 3/3 Dongguan YFW Electronics Co, Ltd.