BSP75G

ADVANCE INFORMATION BSP75G 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET™ MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch. SOT223 PACKAGE FEATURES • High continuous current rating • Logic level input • Input protection (ESD) • Thermal shutdown with auto restart • Over load protection • Short circuit protection with pulse start capability and auto restart • Over voltage protection (active clamp) • Load dump protection (actively protects load) PINOUT DIAGRAM APPLICATIONS • Especially suited for loads with a high inrush current such as lamps and motors capacitive loads in switching applications FUNCTIONAL BLOCK DIAGRAM • All types of resistive, inductive and • C compatible power switch for 12V and 24V DC applications and for 42V Powernet • Automotive rated • Replaces electromechanical relays and discrete circuits DRAFT ISSUE C - NOVEMBER 2003 1 SEMICONDUCTORS BSP75G ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain-source voltage Drain-source voltage for short circuit protection Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation at T A =25°C Continuous drain current @ V IN =10V; T A =25°C 2 Pulsed drain current @ V IN =10V Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (Human Body Model) SYMBOL V DS V DS(SC) V IN V IN T j, T stg PD ID I DM E AS V LoadDump V ESD ADVANCE INFORMATION LIMIT 60 36 -0.2 ... +10 -0.2 ... +20 -40 to +150 -55 to +150 2.5 1.6 3 550 80 4000 UNIT V V V V °C °C W A A mJ V V NOTES 2 For a device surface mounted on FR4 PCB measured at t 10s THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA VALUE 50 UNIT °C/W DRAFT ISSUE C - NOVEMBER 2003 SEMICONDUCTORS 2 ADVANCE INFORMATION ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER STATIC Drain-source clamp voltage Off state drain current Off state drain current Input threshold voltage Input current Input current Input current Static drain-source on-state resistance Static drain-source on-state resistance Continuous load current 2 Continuous load current 2 Current limit 3 Current limit 3 DYNAMIC Turn-on time (V IN to 90% I D ) t on 4 20 s V DS(AZ) I DSS I DSS V IN(th) I IN I IN I IN R DS(on) R DS(on) ID ID I D(LIM) I D(LIM) 0.7 2 1.1 3 1 60 70 0.1 3 2.1 0.7 1.5 4 520 385 75 3 15 2.5 1.2 2.7 7 675 550 1.6 1 1.75 4 V A A V mA mA mA m m A A A A SYMBOL MIN. TYP. BSP75G MAX. UNIT CONDITIONS I D =10mA V DS =12V, V IN =0V V DS =32V, V IN =0V I D =10mA V IN =+5V V IN =+7V V IN =+10V V IN =5V, I D =0.7A V IN =10V, I D =0.7A V IN =10V V IN =5V V IN =5V, V DS >5V V IN =10V, V DS >5V R L =22 , V IN =0 to 10V, V BB =12V R L =22 , V IN =10V to 0V, V BB =12V Turn-off time (V IN to 90% I D ) t off 10 20 s Slew rate on (70 to 50% V BB ) -dV DS /dt on 6.5 20 V/ s R L =22 , V IN =0 to 10V, V BB =12V V/ s R L =22 , V IN =10V to 0V, V BB =12V V Slew rate off (50 to 70% V BB ) DV DS /dt on 3.2 10 PROTECTION FUNCTIONS 1 Required input voltage for over temperature protection Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25°C E AS 550 V PROT T JT 4.5 150 175 10 °C °C mJ I D(ISO) =0.7A, V BB =32V NOTES 1 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 2 For a device surface mounted on FR4 PCB measured at t 10s. 3 The drain current is limited to a reduced value when Vds exceeds a safe value. DRAFT ISSUE C - NOVEMBER 2003 3 SEMICONDUCTORS BSP75G PACKAGE OUTLINE ADVANCE INFORMATION PACKAGE DIMENSIONS Millimeters DIM MIN A A1 A2 b b2 0.02 1.55 0.66 2.90 MAX 1.80 0.10 1.65 0.84 3.10 D e e1 E E1 DIM MIN 6.30 MAX 6.70 Millimeters 2.30 BASIC 4.60 BASIC 6.70 3.30 7.30 3.70 © Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE C - NOVEMBER 2003 SEMICONDUCTORS 4