Preliminary data sheet HITFET® BSP 75A
Smart Lowside Power Switch
Features
• Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation
Product Summary Continuous drain source voltage On-state resistance Current limitation Load current (ISO) Clamping energy
VDS RDS(ON) ID(lim) ID(ISO) EAS
55 550 1 0.7 550
V mΩ A A mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
V bb
+
LOAD M
Drain 2 Overvoltage protection dv/dt IN limitation Short circuit protection Short circuit Current protection limitation Source
1
ESD
Overtemperature protection
3
HITFET®
4
Pin 1 2 3 TAB
Symbol IN DRAIN SOURCE SUBSTRATE
Function Input Output to the load Ground Internally connected to source (pin 3)
Semiconductor Group
Page 1 of 9
1998-02-04
Preliminary data sheet HITFET® BSP 75A
Maximum Ratings at Tj=25°C unless otherwise specified Parameter Continuous drain source voltage (overvoltage protection see page 4) Drain source voltage for short circuit protection Load dump protection VLoadDump=UP+US; UP=13.5 V RI1)=2 Ω; td=400ms; IN=low or high (8V) RL=50 Ω RI=2 Ω; td=400ms; IN=high (8V) RL=22 Ω Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation (DC) Unclamped single pulse inductive energy ID(ISO) = 0.7 A Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance junction soldering point: junction - ambient 3): Symbol VDS Values 55 32 Unit V V V 80 47 -0.2 ... +10 -0.2 ... +20 -40 ...+150 -55 ...+150 1.8 550 4000
VDS VLoadDump2)
VIN VIN Tj Tstg Ptot EAS VESD
V V °C W mJ V
E 40/150/56
RthJS RthJA
≤10 ≤70
K/W
1) 2)
RI=internal resistance of the load dump test pulse generator LD200 VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. 3) Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm 2 copper area for pin 4 connection
Semiconductor Group
Page 2
1998-02-04
Preliminary data sheet HITFET® BSP 75A Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, unless otherwise specified
Symbol
Values min typ max
Unit
Static Characteristics Drain source clamp voltage ID = 10 mA Tj =-40...+150°C: Off state drain current VIN = 0 V, VDS = 32 V Tj =-40...+150°C: Input threshold voltage ID = 10 mA Input current normal operation, ID
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