6MBI450U-120
IGBT Module U-Series
Features
· High speed switching · Voltage drive · Low inductance module structure
1200V / 450A 6 in one-package
Applications
· Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 1200 ±20 600 450 1200 900 450 900 2080 +150 -40 to +125 2500 Unit V V A
Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C
1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
W °C VAC N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=450mA VGE=15V, IC=450A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=450A VGE=±15V RG=1.1 W W V G E=0V V G E=0V I F=450A I Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.20 – 2.45 – 1.75 – 2.00 – 50 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 2.05 – 2.15 – 1.60 – 1.70 – – – 1.0 – 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 2.55 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.35 – 1.90 – 0.35 – – 520 3450 mA nA V V
Inverter
Input capacitance Turn-on time
nF µs
Turn-off time Forward on voltage
V
B value B *5:Biggest internal terminal resistance among arm.
Thermistor
Reverse recovery time Lead resistance, terminal-chip*5 Resistance
IF=450A T=25°C T=100°C T=25/50°C
µs mW W W W K K
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*6 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0167 Unit Max. 0.06 0.10 – °C/W °C/W °C/W
*6 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
6MBI450U-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
1200 1200
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip
1000 Collector current : Ic [A]
VGE=20V
15V
1000 12V Collector current : Ic [A] 800 VGE=20V 15V 12V
800
600 10V 400
600 10V 400
200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
200
8V
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
1200 1000 Collector current : Ic [A] T j=25°C 800 600 400 200 T j=125°C 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip
Collector - Emitter voltage : VCE [ V ]
8
6
4
2
Ic=900A Ic=450A Ic=225A
0 0 1 2 3 4
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C
1000.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
Dynamic Gate charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C
Capacitance : Cies, Coes, Cres [ nF ]
100.0
Cies
VGE
10.0
Cres Coes
1.0
VCE 0 0 500 1000 1500 2000 2500
0.1 0 10 20 30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
6MBI450U-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C
10000 10000
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj=125°C
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff ton tr
100
tf
10 0 200 400 600 800 Collector current : Ic [ A ]
10 0 200 400 600 800 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj= 25°C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 100
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω
Switching time : ton, tr, toff, tf [ nsec ]
ton toff 1000
Eoff(125°C) 80 Eon(125°C) 60 Eoff(25°C) 40
tr 100 tf
Eon(25°C) Err(125°C) Err(25°C)
20
10 0.1 1.0 10.0 100.0
0 0 200 400 600 800 1000
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.1Ω ,Tj
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